GB1352716A - Couble junction read only memory and process of manufacture - Google Patents

Couble junction read only memory and process of manufacture

Info

Publication number
GB1352716A
GB1352716A GB3513371A GB3513371A GB1352716A GB 1352716 A GB1352716 A GB 1352716A GB 3513371 A GB3513371 A GB 3513371A GB 3513371 A GB3513371 A GB 3513371A GB 1352716 A GB1352716 A GB 1352716A
Authority
GB
United Kingdom
Prior art keywords
read
junction
applying
couble
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3513371A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intersil Corp
Original Assignee
Intersil Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intersil Inc filed Critical Intersil Inc
Publication of GB1352716A publication Critical patent/GB1352716A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/06—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)

Abstract

1352716 Read-only memories INTERSIL Inc 27 July 1971 [14 Dec 1970] 35133/71 Heading G4A [Also in Division H1] An integrated circuit read-only memory comprises row and column conductors having a pair of back-to-back diodes (e.g. formed by the two junctions in a transistor) connected between them at each crossing point, information being recorded in the store by applying an electrical surface short across one diode in selected pairs so as to leave a conduction path between the row and column conductors through the remaining diodes of the selected pairs. Preferably the short is formed by applying a reverse bias voltage in excess of the junction breakdown voltage across the junction to cause migration of the metal of the contacts along the top of the semi-conductor material beneath its oxide insulating layer.
GB3513371A 1970-12-14 1971-07-27 Couble junction read only memory and process of manufacture Expired GB1352716A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9749270A 1970-12-14 1970-12-14

Publications (1)

Publication Number Publication Date
GB1352716A true GB1352716A (en) 1974-05-08

Family

ID=22263655

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3513371A Expired GB1352716A (en) 1970-12-14 1971-07-27 Couble junction read only memory and process of manufacture

Country Status (4)

Country Link
JP (1) JPS5242016B1 (en)
DE (1) DE2132570C3 (en)
GB (1) GB1352716A (en)
IT (1) IT944899B (en)

Also Published As

Publication number Publication date
DE2132570C3 (en) 1980-11-20
DE2132570A1 (en) 1972-06-22
DE2132570B2 (en) 1980-02-28
IT944899B (en) 1973-04-20
JPS5242016B1 (en) 1977-10-21

Similar Documents

Publication Publication Date Title
GB1524864A (en) Monolithic semiconductor arrangements
GB1309310A (en) Fabrication of semiconductor devices
MY6900284A (en) Semiconductor devices containing two or more circuit elements therein
US3852800A (en) One transistor dynamic memory cell
GB1312171A (en) Semiconductor arrangements for use as fixed value stores
GB1294184A (en) Semiconductor devices and wafers and method of fabricating same
GB1434961A (en) Integrated circuit arrangements
GB1244926A (en) Improvements in or relating to electrical control circuit arrangements
GB1352716A (en) Couble junction read only memory and process of manufacture
GB995727A (en) Improvements in or relating to semiconductor devices
GB1246864A (en) Transistor
GB1137619A (en) Semiconductor devices
GB1223705A (en) Semiconductor devices
US3747077A (en) Semiconductor memory
GB1000467A (en) Cryogenic devices
ES383504A1 (en) A high frequency integrated circuit having circuit elements in separate and mutually spaced isolation regions
GB1503300A (en) Schottky barrier diode memory devices
ATA564470A (en) SEMI-CONDUCTOR ARRANGEMENT WITH AT LEAST TWO FIELD EFFECT TRANSISTORS WITH INSULATED GATE ELECTRODE
JPS6329421B2 (en)
GB1334943A (en) Semiconductor element
GB1458579A (en) Semi-conductor gate controlled switch devices
GB1451960A (en) Power transistors
SE7707251L (en) SEMICONDUCTOR CIRCUIT DIP
JPS5656663A (en) Semiconductor device
GB1230620A (en)

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years