DE2129269A1 - Bistabiles Halbleiterelement - Google Patents

Bistabiles Halbleiterelement

Info

Publication number
DE2129269A1
DE2129269A1 DE19712129269 DE2129269A DE2129269A1 DE 2129269 A1 DE2129269 A1 DE 2129269A1 DE 19712129269 DE19712129269 DE 19712129269 DE 2129269 A DE2129269 A DE 2129269A DE 2129269 A1 DE2129269 A1 DE 2129269A1
Authority
DE
Germany
Prior art keywords
semiconductor element
zone
element according
low
density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19712129269
Other languages
German (de)
English (en)
Inventor
Harold John Putnam Valley N.Y. Hovel (V. St.A.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2129269A1 publication Critical patent/DE2129269A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/70—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices having only two electrodes and exhibiting negative resistance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H10D48/381—Multistable devices; Devices having two or more distinct operating states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Memories (AREA)
  • Recrystallisation Techniques (AREA)
  • Read Only Memory (AREA)
DE19712129269 1970-06-17 1971-06-12 Bistabiles Halbleiterelement Pending DE2129269A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4694370A 1970-06-17 1970-06-17

Publications (1)

Publication Number Publication Date
DE2129269A1 true DE2129269A1 (de) 1971-12-23

Family

ID=21946212

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19712129269 Pending DE2129269A1 (de) 1970-06-17 1971-06-12 Bistabiles Halbleiterelement

Country Status (6)

Country Link
JP (1) JPS5131066B1 (https=)
CH (1) CH521024A (https=)
DE (1) DE2129269A1 (https=)
FR (1) FR2095305B1 (https=)
GB (1) GB1300528A (https=)
NL (1) NL7107536A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2223245A1 (de) * 1971-06-21 1973-01-11 Ibm Informationsspeicher
DE3118799A1 (de) * 1980-05-16 1982-03-18 Institut radiotechniki i elektroniki Akademii Nauk SSSR, Moskva Halbleiterspeicher

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0072221B1 (en) * 1981-08-07 1987-11-11 The British Petroleum Company p.l.c. Non-volatile electrically programmable memory device
US4665504A (en) * 1982-11-26 1987-05-12 The British Petroleum Company Memory device containing electrically conducting substrate having deposited hereon a layer of amorphous or microcrystalline silicon-carbon alloy and a layer of amorphous or microcrystalline silicon-containing material

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1969C (de) * J. STEZALY in Breslau Eisschlittschuh

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2223245A1 (de) * 1971-06-21 1973-01-11 Ibm Informationsspeicher
DE3118799A1 (de) * 1980-05-16 1982-03-18 Institut radiotechniki i elektroniki Akademii Nauk SSSR, Moskva Halbleiterspeicher

Also Published As

Publication number Publication date
FR2095305A1 (https=) 1972-02-11
FR2095305B1 (https=) 1976-03-19
CH521024A (de) 1972-03-31
NL7107536A (https=) 1971-12-21
GB1300528A (en) 1972-12-20
JPS5131066B1 (https=) 1976-09-04

Similar Documents

Publication Publication Date Title
DE961913C (de) Verfahren zur Herstellung von elektrisch unsymmetrisch leitenden Systemen mit p-n-UEbergaengen
DE10392313B4 (de) Auf Galliumnitrid basierende Vorrichtungen und Herstellungsverfahren
DE69838313T2 (de) Optoelektronische Halbleiteranordnung auf Basis einer Nitridverbindung der Gruppe III
DE19905516C2 (de) Lichtemittierende Diode mit dotierter Grenzflächenschicht zum Steuern von Verunreinigungen und Verfahren zum Herstellen derselben
DE112015003943B4 (de) Halbleiterelement und kristalline Laminatstruktur
EP0996985B1 (de) II-VI-HALBLEITERBAUELEMENT MIT MINDESTENS EINEM ÜBERGANG VON EINER Se-ENTHALTENDEN SCHICHT AUF EINE BeTe-ENTHALTENDE SCHICHT UND VERFAHREN ZUM HERSTELLEN DES ÜBERGANGES
DE2803795A1 (de) Halbleiter-speicherelement
DE3629402C2 (de) Verfahren und Vorrichtung zur schnellen Fotodetektierung mit Hilfe eines Supergitters
DE2416550A1 (de) Verfahren zum aufwachsen von uebergitterstrukturkristallen
DE1005194B (de) Flaechentransistor
DE2359072B2 (de) Verfahren zur Herstellung einer Durchsicht-Photokathode
DE102013223414A1 (de) Ein pseudomorphischer Transistor mit hoher Elektronenmobilität, welcher eine dotierte Niedrig-Temperatur Pufferschicht aufweist
DE102021123815B4 (de) Halbleitervorrichtung und Verfahren zum Herstellen derselben
DE2735937C2 (de) Flüssigphasenepitaxie-Verfahren zur Herstellung von Halbleiter-Heterostrukturen
DE2457130A1 (de) Germanium-dotierte galliumarsenidschicht als ohmscher kontakt
DE69107630T2 (de) Halbleiterstruktur für optoelektronische Vorrichtung.
DE2734203A1 (de) Hetero-uebergangslaser
DE3234678C2 (https=)
DE102007019079A1 (de) Verfahren zum Herstellen eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE2129269A1 (de) Bistabiles Halbleiterelement
WO1999003144A1 (de) Verfahren zum herstellen eines ii-vi-halbleiter-bauelements
DE10260937A1 (de) Strahlungssemittierender Halbleiterkörper und Verfahren zu dessen Herstellung
EP0800214A1 (de) Bauelement in stickstoffhaltigem Halbleitermaterial
DE2430687C3 (de) Kaltemissionshalbleitervorrichtung
Nag Direct band-gap energy of semiconductors

Legal Events

Date Code Title Description
OHN Withdrawal