DE2128114A1 - Halbleiterhalterung fur hohe Fre quenzen - Google Patents
Halbleiterhalterung fur hohe Fre quenzenInfo
- Publication number
- DE2128114A1 DE2128114A1 DE19712128114 DE2128114A DE2128114A1 DE 2128114 A1 DE2128114 A1 DE 2128114A1 DE 19712128114 DE19712128114 DE 19712128114 DE 2128114 A DE2128114 A DE 2128114A DE 2128114 A1 DE2128114 A1 DE 2128114A1
- Authority
- DE
- Germany
- Prior art keywords
- metal layer
- semiconductor
- ceramic component
- holder
- section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/047—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6644—Packaging aspects of high-frequency amplifiers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49109—Connecting at different heights outside the semiconductor or solid-state body
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- H—ELECTRICITY
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/494—Connecting portions
- H01L2224/4943—Connecting portions the connecting portions being staggered
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30105—Capacitance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US5490470A | 1970-07-15 | 1970-07-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2128114A1 true DE2128114A1 (de) | 1972-01-20 |
Family
ID=21994274
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712128114 Pending DE2128114A1 (de) | 1970-07-15 | 1971-06-05 | Halbleiterhalterung fur hohe Fre quenzen |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3626259A (enExample) |
| JP (1) | JPS516504B1 (enExample) |
| DE (1) | DE2128114A1 (enExample) |
| FR (1) | FR2098403A1 (enExample) |
| IT (1) | IT940431B (enExample) |
Families Citing this family (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3808474A (en) * | 1970-10-29 | 1974-04-30 | Texas Instruments Inc | Semiconductor devices |
| US3753056A (en) * | 1971-03-22 | 1973-08-14 | Texas Instruments Inc | Microwave semiconductor device |
| US3784883A (en) * | 1971-07-19 | 1974-01-08 | Communications Transistor Corp | Transistor package |
| GB1327352A (en) * | 1971-10-02 | 1973-08-22 | Kyoto Ceramic | Semiconductor device |
| DE2250918C2 (de) * | 1971-10-27 | 1982-02-04 | Westinghouse Electric Corp., 15222 Pittsburgh, Pa. | Chipträger für Mikrowellen-Leistungstransistoren und Verfahren zu seiner Herstellung |
| US3740672A (en) * | 1971-11-22 | 1973-06-19 | Rca Corp | Semiconductor carrier for microwave applications |
| US3764856A (en) * | 1972-05-17 | 1973-10-09 | Massachusetts Inst Technology | Heat transfer in electronic equipment |
| US3784884A (en) * | 1972-11-03 | 1974-01-08 | Motorola Inc | Low parasitic microwave package |
| US3936864A (en) * | 1973-05-18 | 1976-02-03 | Raytheon Company | Microwave transistor package |
| US3943556A (en) * | 1973-07-30 | 1976-03-09 | Motorola, Inc. | Method of making a high frequency semiconductor package |
| US3908185A (en) * | 1974-03-06 | 1975-09-23 | Rca Corp | High frequency semiconductor device having improved metallized patterns |
| US4023198A (en) * | 1974-08-16 | 1977-05-10 | Motorola, Inc. | High frequency, high power semiconductor package |
| JPS5233453A (en) * | 1975-09-10 | 1977-03-14 | Nec Corp | High frequency high output transistor amplifier |
| US4150393A (en) * | 1975-09-29 | 1979-04-17 | Motorola, Inc. | High frequency semiconductor package |
| DE2812700A1 (de) * | 1978-03-23 | 1979-12-06 | Bbc Brown Boveri & Cie | Halbleiteranordnung mit zwei halbleiterelementen |
| JPS5834755Y2 (ja) * | 1978-09-18 | 1983-08-04 | 富士通株式会社 | 半導体装置 |
| DE2966040D1 (en) * | 1978-12-26 | 1983-09-08 | Fujitsu Ltd | High frequency semiconductor unit |
| US4417392A (en) * | 1980-05-15 | 1983-11-29 | Cts Corporation | Process of making multi-layer ceramic package |
| FR2493602A1 (fr) * | 1980-10-31 | 1982-05-07 | Thomson Csf | Embase de boitier d'encapsulation de composants, a electrodes coplanaires et dispositif semiconducteur ainsi encapsule |
| DE3147790A1 (de) * | 1981-12-03 | 1983-06-09 | Brown, Boveri & Cie Ag, 6800 Mannheim | Leistungsmodul und verfahren zu seiner herstellung |
| US4620215A (en) * | 1982-04-16 | 1986-10-28 | Amdahl Corporation | Integrated circuit packaging systems with double surface heat dissipation |
| JPH088321B2 (ja) * | 1987-01-19 | 1996-01-29 | 住友電気工業株式会社 | 集積回路パツケ−ジ |
| KR100192871B1 (ko) * | 1989-09-28 | 1999-06-15 | 기타지마 요시도시 | 리드프레임 및 그 제조방법 |
| US5105260A (en) | 1989-10-31 | 1992-04-14 | Sgs-Thomson Microelectronics, Inc. | Rf transistor package with nickel oxide barrier |
| EP0434264B1 (en) * | 1989-12-22 | 1994-10-12 | Westinghouse Electric Corporation | Package for power semiconductor components |
| US5109268A (en) * | 1989-12-29 | 1992-04-28 | Sgs-Thomson Microelectronics, Inc. | Rf transistor package and mounting pad |
| US5331511A (en) * | 1993-03-25 | 1994-07-19 | Vlsi Technology, Inc. | Electrically and thermally enhanced integrated-circuit package |
| JPH08139113A (ja) * | 1994-11-09 | 1996-05-31 | Mitsubishi Electric Corp | 樹脂封止型半導体装置 |
| US5616886A (en) * | 1995-06-05 | 1997-04-01 | Motorola | Wirebondless module package |
| US5898128A (en) * | 1996-09-11 | 1999-04-27 | Motorola, Inc. | Electronic component |
| US7446411B2 (en) * | 2005-10-24 | 2008-11-04 | Freescale Semiconductor, Inc. | Semiconductor structure and method of assembly |
| EP2127016A4 (en) * | 2007-02-23 | 2012-08-15 | Skyworks Solutions Inc | HIGH FREQUENCY SWITCH WITH LOW LOSS, LOW VIBRATION AND INCREASED LINEARITY PERFORMANCE |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1130666A (en) * | 1966-09-30 | 1968-10-16 | Nippon Electric Co | A semiconductor device |
| US3549784A (en) * | 1968-02-01 | 1970-12-22 | American Lava Corp | Ceramic-metallic composite substrate |
| US3566212A (en) * | 1969-02-24 | 1971-02-23 | Trw Semiconductors Inc | High temperature semiconductor package |
-
1970
- 1970-07-15 US US54904A patent/US3626259A/en not_active Expired - Lifetime
-
1971
- 1971-05-18 FR FR7117987A patent/FR2098403A1/fr not_active Withdrawn
- 1971-06-05 DE DE19712128114 patent/DE2128114A1/de active Pending
- 1971-06-25 JP JP46045783A patent/JPS516504B1/ja active Pending
- 1971-07-09 IT IT26872/71A patent/IT940431B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| JPS516504B1 (enExample) | 1976-02-28 |
| US3626259A (en) | 1971-12-07 |
| IT940431B (it) | 1973-02-10 |
| FR2098403A1 (enExample) | 1972-03-10 |
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