DE2127658A1 - Verfahren zum Aktivieren einer Halbleiterelektronenquelle - Google Patents
Verfahren zum Aktivieren einer HalbleiterelektronenquelleInfo
- Publication number
- DE2127658A1 DE2127658A1 DE19712127658 DE2127658A DE2127658A1 DE 2127658 A1 DE2127658 A1 DE 2127658A1 DE 19712127658 DE19712127658 DE 19712127658 DE 2127658 A DE2127658 A DE 2127658A DE 2127658 A1 DE2127658 A1 DE 2127658A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- sensitization
- strongly
- cesium
- carried out
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims description 29
- 239000004065 semiconductor Substances 0.000 title claims description 27
- 230000003213 activating effect Effects 0.000 title claims description 5
- 239000000463 material Substances 0.000 claims description 17
- 229910052792 caesium Inorganic materials 0.000 claims description 16
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 16
- 206010070834 Sensitisation Diseases 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 230000008313 sensitization Effects 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 2
- 230000001235 sensitizing effect Effects 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000000354 decomposition reaction Methods 0.000 claims 1
- 238000000586 desensitisation Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 238000001994 activation Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- -1 cesium oxygen Chemical compound 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
- H01J9/22—Applying luminescent coatings
- H01J9/221—Applying luminescent coatings in continuous layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
- H01J9/22—Applying luminescent coatings
- H01J9/227—Applying luminescent coatings with luminescent material discontinuously arranged, e.g. in dots or lines
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cold Cathode And The Manufacture (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US6953770A | 1970-09-04 | 1970-09-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2127658A1 true DE2127658A1 (de) | 1972-03-09 |
| DE2127658B2 DE2127658B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1979-03-29 |
Family
ID=22089655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712127658 Withdrawn DE2127658A1 (de) | 1970-09-04 | 1971-06-03 | Verfahren zum Aktivieren einer Halbleiterelektronenquelle |
Country Status (6)
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL160425C (nl) * | 1971-08-17 | 1979-10-15 | Philips Nv | Werkwijze voor het vervaardigen van een elektrische ontla- dingsbuis, waarin een elektronen-emitterende elektrode aanwezig is, die uit een drager bestaat, waarop een caesium bevattende laag is aangebracht, en elektrische ontladings- buis vervaardigd volgens deze werkwijze. |
| US3894258A (en) * | 1973-06-13 | 1975-07-08 | Rca Corp | Proximity image tube with bellows focussing structure |
| US4019082A (en) * | 1975-03-24 | 1977-04-19 | Rca Corporation | Electron emitting device and method of making the same |
| GB1555762A (en) * | 1975-08-14 | 1979-11-14 | Mullard Ltd | Method of cleaning surfaces |
| JPS58114027U (ja) * | 1982-01-28 | 1983-08-04 | 松下電工株式会社 | 安定器取付構造 |
| JPS5998636U (ja) * | 1982-12-21 | 1984-07-04 | 明治ナシヨナル工業株式会社 | 放電灯用安定器装置 |
| CN110706989A (zh) * | 2019-10-30 | 2020-01-17 | 南京工程学院 | 提高GaAs光电阴极稳定性的Cs/NF3激活方法 |
-
1970
- 1970-09-04 US US69537A patent/US3669735A/en not_active Expired - Lifetime
-
1971
- 1971-05-20 GB GB1611771*[A patent/GB1321005A/en not_active Expired
- 1971-05-21 NL NL7106981A patent/NL7106981A/xx not_active Application Discontinuation
- 1971-05-28 FR FR7119454A patent/FR2105234B1/fr not_active Expired
- 1971-06-03 JP JP46038971A patent/JPS5120153B1/ja active Pending
- 1971-06-03 DE DE19712127658 patent/DE2127658A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| US3669735A (en) | 1972-06-13 |
| GB1321005A (en) | 1973-06-20 |
| FR2105234A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1972-04-28 |
| FR2105234B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1977-11-18 |
| NL7106981A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1972-03-07 |
| DE2127658B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1979-03-29 |
| JPS5120153B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1976-06-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE1614540C3 (de) | Halbleiteranordnung sowie Verfahren zu ihrer Herstellung | |
| DE2822901C2 (de) | Verfahren zum Herstellen von Halbleiterbauelementen | |
| DE2720893B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| DE1246890B (de) | Diffusionsverfahren zum Herstellen eines Halbleiterbauelements | |
| DE1148024B (de) | Diffusionsverfahren zum Dotieren eines Silizium-Halbleiterkoerpers fuer Halbleiterbauelemente | |
| DE2425185C3 (de) | Verfahren zum Herstellen von Halbleitervorrichtungen, insbesondere von Feldeffekttransistoren | |
| DE3914182A1 (de) | Trockenaetzverfahren fuer halbleiter | |
| DE465276C (de) | Gluehkathode fuer Entladungsroehren | |
| DE2127658A1 (de) | Verfahren zum Aktivieren einer Halbleiterelektronenquelle | |
| DE1764757B2 (de) | Verfahren zur herstellung eines feldeffekttransistors mit isolierter gateelektrode | |
| DE1514359B1 (de) | Feldeffekt-Halbleiterbauelement und Verfahren zu seiner Herstellung | |
| DE1944131A1 (de) | Verfahren zum Herabsetzen der Stapelfehlerdichte in epitaktischen Schichten von Halbleiterbauelementen | |
| DE1930423B2 (de) | Verfahren zur Herstellung eines Halbleiterbauelementes | |
| DE1953070C3 (de) | Verfahren zum Herstellen eines Tantaloxinitridschicht- widerstandelements | |
| DE1179644B (de) | Verfahren und Vorrichtung zum Verstaerken, Erzeugen oder Modulieren elektrischer Schwingungen mit einem strahlenempfindlichen Halbleiterbauelement | |
| DE2325869A1 (de) | Verfahren zum herstellen eines silizium-elektronenemitters mit negativer effektiver elektronenaffinitaet | |
| DE1105071B (de) | Verfahren zur Herstellung eines Nickeltraegers fuer eine Oxydkathode | |
| DE1105066B (de) | Halbleiteranordnung mit einem wenigstens teilweise hochohmigen Kadmiumtelluridkoerper und Verfahren zu deren Herstellung | |
| DE2830035C2 (de) | Verfahren, bei arsenhaltigen Oxidfilmen auf einer Halbleitervorrichtung die Verarmung an Arsen zu verhindern | |
| DE1614015B1 (de) | Verfahren zur behandlung und zum fuellen bei der herstellung von fuer hohe arbeitstemperaturen geeigneten halogen-geiger-mueller-zaehlrohren | |
| DE1546066A1 (de) | Stabilisierung von Silicium-Halbleiteroberflaechen | |
| DE1194064B (de) | Verfahren zum elektrolytischen AEtzen der Ober-flaeche eines mit Legierungselektroden aus einer Bleilegierung versehenen npn-Transistors mit einem Halbleiterkoerper aus Germanium | |
| DE1052573B (de) | Verfahren zur Herstellung eines halbleitenden Elektrodensystems, insbesondere eines Transistors | |
| DE2709802A1 (de) | Verfahren zur entfernung von bei ionenimplantationsprozessen in halbleitersystemen entstehenden verunreinigungen | |
| DE1614015C (de) | Verfahren zur Behandlung und zum Füllen bei der Herstellung von fur hohe Arbeitstem peraturen geeigneten Halogen Geiger Muller Zahlrohren |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BHJ | Nonpayment of the annual fee |