DE2116107A1 - Speicherzelle - Google Patents

Speicherzelle

Info

Publication number
DE2116107A1
DE2116107A1 DE19712116107 DE2116107A DE2116107A1 DE 2116107 A1 DE2116107 A1 DE 2116107A1 DE 19712116107 DE19712116107 DE 19712116107 DE 2116107 A DE2116107 A DE 2116107A DE 2116107 A1 DE2116107 A1 DE 2116107A1
Authority
DE
Germany
Prior art keywords
transistors
memory
transistor
memory cell
cell according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19712116107
Other languages
German (de)
English (en)
Inventor
Siegfried Kurt Dr. 7300 Esslingen; Lohrey Fred Helmut Poughkeepsie N.Y. Wiedmann (V.StA.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IBM Deutschland GmbH
Original Assignee
IBM Deutschland GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IBM Deutschland GmbH filed Critical IBM Deutschland GmbH
Publication of DE2116107A1 publication Critical patent/DE2116107A1/de
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated

Landscapes

  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
DE19712116107 1970-04-20 1971-04-02 Speicherzelle Pending DE2116107A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2997570A 1970-04-20 1970-04-20

Publications (1)

Publication Number Publication Date
DE2116107A1 true DE2116107A1 (de) 1971-11-04

Family

ID=21851872

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19712116107 Pending DE2116107A1 (de) 1970-04-20 1971-04-02 Speicherzelle

Country Status (9)

Country Link
US (1) US3643231A (enExample)
JP (1) JPS4937295B1 (enExample)
BE (1) BE763399R (enExample)
CA (1) CA932460A (enExample)
CH (1) CH518610A (enExample)
DE (1) DE2116107A1 (enExample)
GB (1) GB1281808A (enExample)
NL (1) NL7105102A (enExample)
SE (1) SE376319B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3815106A (en) * 1972-05-11 1974-06-04 S Wiedmann Flip-flop memory cell arrangement
US3703709A (en) * 1969-05-24 1972-11-21 Nippon Electric Co High speed associative memory circuits
US3764833A (en) * 1970-09-22 1973-10-09 Ibm Monolithic memory system with bi-level powering for reduced power consumption
NL163338C (nl) * 1972-03-25 1980-08-15 Philips Nv Elektronische schakeling.
DE2926050C2 (de) * 1979-06-28 1981-10-01 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren und Schaltungsanordnung zum Lesen Und/oder Schreiben eines integrierten Halbleiterspeichers mit Speicherzellen in MTL-Technik
DE2943565C2 (de) * 1979-10-29 1981-11-12 Ibm Deutschland Gmbh, 7000 Stuttgart Speicherzellennachbildung zur Referenzspannungserzeugung für Halbleiterspeicher in MTL-Technik
FR2469049A1 (fr) * 1979-10-30 1981-05-08 Ibm France Circuit comportant au moins deux dispositifs semi-conducteurs en technologie mtl presentant des temps de montee differents et circuits logiques en derivant
DE2944141A1 (de) * 1979-11-02 1981-05-14 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte speicheranordnung
US5021856A (en) * 1989-03-15 1991-06-04 Plessey Overseas Limited Universal cell for bipolar NPN and PNP transistors and resistive elements
US5579440A (en) * 1993-11-22 1996-11-26 Brown; Robert A. Machine that learns what it actually does
KR20190075341A (ko) * 2017-12-21 2019-07-01 에스케이하이닉스 주식회사 반도체 메모리 장치

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3423737A (en) * 1965-06-21 1969-01-21 Ibm Nondestructive read transistor memory cell
US3551899A (en) * 1967-11-28 1970-12-29 Nippon Electric Co Associative memory employing bistable circuits as memory cells
US3548386A (en) * 1968-07-15 1970-12-15 Ibm Associative memory

Also Published As

Publication number Publication date
CH518610A (de) 1972-01-31
CA932460A (en) 1973-08-21
BE763399R (fr) 1971-07-16
US3643231A (en) 1972-02-15
SE376319B (enExample) 1975-05-12
JPS4937295B1 (enExample) 1974-10-08
GB1281808A (en) 1972-07-19
NL7105102A (enExample) 1971-10-22

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