DE2109418B2 - Mechanisch-elektrischer Wandler - Google Patents

Mechanisch-elektrischer Wandler

Info

Publication number
DE2109418B2
DE2109418B2 DE2109418A DE2109418A DE2109418B2 DE 2109418 B2 DE2109418 B2 DE 2109418B2 DE 2109418 A DE2109418 A DE 2109418A DE 2109418 A DE2109418 A DE 2109418A DE 2109418 B2 DE2109418 B2 DE 2109418B2
Authority
DE
Germany
Prior art keywords
layer
substrate
tin oxide
mechanical
converter according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE2109418A
Other languages
German (de)
English (en)
Other versions
DE2109418A1 (de
Inventor
Kazuhiro Takatsuki Osaka Higashi
Nobuaki Miura
Isao Taguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1970114087U external-priority patent/JPS5124857Y1/ja
Application filed by Omron Tateisi Electronics Co filed Critical Omron Tateisi Electronics Co
Publication of DE2109418A1 publication Critical patent/DE2109418A1/de
Publication of DE2109418B2 publication Critical patent/DE2109418B2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—

Landscapes

  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
DE2109418A 1970-11-16 1971-02-27 Mechanisch-elektrischer Wandler Granted DE2109418B2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1970114087U JPS5124857Y1 (enExample) 1970-11-16 1970-11-16
JP151571 1971-01-20

Publications (2)

Publication Number Publication Date
DE2109418A1 DE2109418A1 (de) 1972-05-31
DE2109418B2 true DE2109418B2 (de) 1973-01-04

Family

ID=26334736

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2109418A Granted DE2109418B2 (de) 1970-11-16 1971-02-27 Mechanisch-elektrischer Wandler

Country Status (4)

Country Link
US (1) US3872490A (enExample)
CA (1) CA920280A (enExample)
DE (1) DE2109418B2 (enExample)
FR (1) FR2116351B1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4016589A (en) * 1971-11-10 1977-04-05 Omron Tateisi Electronics Co., Ltd. Semiconductor device
US4011577A (en) * 1972-03-21 1977-03-08 Omron Tateisi Electronics Co. Mechanical-electrical force transducer with semiconductor-insulating layer-tin oxide composite
GB1419143A (en) * 1972-04-04 1975-12-24 Omron Tateisi Electronics Co Semiconductor photoelectric device
FR2504717A1 (fr) * 1981-04-24 1982-10-29 Novik Viktor Procede de commande electromecanique d'un courant et dispositif pour sa realisation
US4566023A (en) * 1983-08-12 1986-01-21 The Regents Of The University Of California Squeezable electron tunnelling junction
GB8615305D0 (en) * 1986-06-23 1986-07-30 Stc Plc Pressure sensor
DE19645083C2 (de) * 1996-11-01 2000-01-27 Austria Card Gmbh Wien Kontaktlose Chipkarte mit Transponderspule
US6727524B2 (en) * 2002-03-22 2004-04-27 Kulite Semiconductor Products, Inc. P-n junction structure

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3330983A (en) * 1962-07-06 1967-07-11 Gen Electric Heterojunction electroluminescent devices
US3270555A (en) * 1963-09-24 1966-09-06 Raytheon Co Stress sensitive tunnel diode transducer
DE1239871B (de) * 1963-12-09 1967-05-03 Siemens Ag Druckempfindliche Halbleiteranordnung
FR1409894A (fr) * 1964-07-23 1965-09-03 Electronique & Automatisme Sa Dispositif opto-électronique perfectionné
NL6410080A (enExample) * 1964-08-29 1966-03-01
US3381182A (en) * 1964-10-19 1968-04-30 Philco Ford Corp Microcircuits having buried conductive layers
US3365630A (en) * 1965-01-29 1968-01-23 Bell Telephone Labor Inc Electroluminescent gallium phosphide crystal with three dopants
US3518508A (en) * 1965-12-10 1970-06-30 Matsushita Electric Industrial Co Ltd Transducer
US3508125A (en) * 1966-01-06 1970-04-21 Texas Instruments Inc Microwave mixer diode comprising a schottky barrier junction
US3596151A (en) * 1966-06-10 1971-07-27 Electro Tec Corp Constant sensitivity photoconductor detector with a tin oxide-semiconductor rectifying junction
US3451912A (en) * 1966-07-15 1969-06-24 Ibm Schottky-barrier diode formed by sputter-deposition processes
GB1250020A (en) * 1967-12-27 1971-10-20 Matsushita Electric Industrial Co Ltd Semiconductor device
US3598997A (en) * 1968-07-05 1971-08-10 Gen Electric Schottky barrier atomic particle and x-ray detector
GB1265018A (enExample) * 1968-08-27 1972-03-01
US3566217A (en) * 1968-10-01 1971-02-23 Globe Union Inc Electrical component and method of manufacture
JPS497635B1 (enExample) * 1968-12-27 1974-02-21
CA918297A (en) * 1969-09-24 1973-01-02 Tanimura Shigeru Semiconductor device and method of making

Also Published As

Publication number Publication date
FR2116351B1 (enExample) 1974-04-26
US3872490A (en) 1975-03-18
FR2116351A1 (enExample) 1972-07-13
DE2109418A1 (de) 1972-05-31
CA920280A (en) 1973-01-30

Similar Documents

Publication Publication Date Title
DE2517939C2 (de) Verfahren zur Herstellung einer für Infrarotstrahlung empfindlichen Photodiode
DE2160427C3 (enExample)
DE69635299T2 (de) Herstellungsverfahren von Schottky Elektroden auf Halbleitervorrichtungen
DE1032404B (de) Verfahren zur Herstellung von Flaechenhalbleiterelementen mit p-n-Schichten
DE2357376C3 (de) Mesa-Thyristor und Verfahren zu seiner Herstellung
DE1614148B2 (de) Verfahren zum herstellen einer elektrode fuer halbleiter bauelemente
DE2911484C2 (de) Metall-Isolator-Halbleiterbauelement
DE1808928A1 (de) Halbleiterbauelement und Verfahren zu dessen Herstellung
DE2109418B2 (de) Mechanisch-elektrischer Wandler
DE2460682C2 (de) Planares Halbleiterbauelement
DE3301457C2 (de) Halbleitervorrichtung und Verfahren zu ihrer Herstellung
DE2649738C2 (de) Halbleiterbauelement
DE1949646C3 (de) Verfahren zum Herstellen eines Halbleiterbauelements, mit einer Schottky-Sperrschicht
DE2339444C2 (de) Verfahren zur Herstellung eines Sperrschicht-Feldeffekttransistors
DE1800578C3 (de) Strahlungsdetektor
DE2341832C3 (de) Verfahren zur Herstellung eines Magnetkopfes
DE2253683A1 (de) Ionengespickter widerstand und verfahren zum herstellen eines derartigen widerstands
DE2330810C3 (de) Temperaturempfindliches Halbleiterbauelement, Verfahren zum Herstellen und zum Betrieb
DE2603745C3 (de) Mehrschichtiger Metallanschlußkontakt und Verfahren zu seiner Herstellung
DE2313604C3 (de) Mechanisch-elektrischer Wandler
DE1614982A1 (de) Verfahren zum Kontaktieren von Halbleiteranordnungen
DE1514668B2 (de) Verfahren zum herstellen von chrom- silber-kontakten auf halbleiterbauelementen
DE2638530A1 (de) Halbleitervorrichtung mit schottkyscher sperrschicht und verfahren zur herstellung derselben
DE1514668C3 (de) Verfahren zum Herstellen von Chrom-Silber-Kontakten auf Halbleiterbauelementen
DE1927955C3 (de) Verfahren zur Herstellung der Elektrodenkontakte bei einem Silizium-Feldeffekttransistor

Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
E77 Valid patent as to the heymanns-index 1977
EHJ Ceased/non-payment of the annual fee