DE2102650A1 - Kondensator fur integrierte Schaltungen - Google Patents
Kondensator fur integrierte SchaltungenInfo
- Publication number
- DE2102650A1 DE2102650A1 DE19712102650 DE2102650A DE2102650A1 DE 2102650 A1 DE2102650 A1 DE 2102650A1 DE 19712102650 DE19712102650 DE 19712102650 DE 2102650 A DE2102650 A DE 2102650A DE 2102650 A1 DE2102650 A1 DE 2102650A1
- Authority
- DE
- Germany
- Prior art keywords
- relief pattern
- capacitor
- shape
- plates
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims description 50
- 238000005530 etching Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 239000004020 conductor Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 239000003607 modifier Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000000203 mixture Substances 0.000 description 4
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000003518 caustics Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- -1 n-propanol Chemical compound 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/64—Variable-capacitance diodes, e.g. varactors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
- H10D1/665—Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Weting (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US582070A | 1970-01-26 | 1970-01-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2102650A1 true DE2102650A1 (de) | 1971-08-05 |
Family
ID=21717914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712102650 Pending DE2102650A1 (de) | 1970-01-26 | 1971-01-21 | Kondensator fur integrierte Schaltungen |
Country Status (6)
| Country | Link |
|---|---|
| BE (1) | BE762014A (enrdf_load_stackoverflow) |
| CA (1) | CA957782A (enrdf_load_stackoverflow) |
| DE (1) | DE2102650A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2077319B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1341102A (enrdf_load_stackoverflow) |
| NL (1) | NL7100955A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1670064A1 (en) * | 2004-12-13 | 2006-06-14 | Infineon Technologies AG | Monolithically intergrated capacitor and method for manufacturing thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL6706379A (enrdf_load_stackoverflow) * | 1966-05-04 | 1967-11-06 | ||
| NL144778B (nl) * | 1966-12-20 | 1975-01-15 | Western Electric Co | Werkwijze voor het vervaardigen van een halfgeleiderinrichting door anisotroop etsen alsmede aldus vervaardigde inrichting. |
| NL6711612A (enrdf_load_stackoverflow) * | 1966-12-22 | 1968-06-24 | ||
| US3611062A (en) * | 1968-04-17 | 1971-10-05 | Ibm | Passive elements for solid-state integrated circuits |
| FR2038154B1 (enrdf_load_stackoverflow) * | 1969-04-02 | 1974-03-01 | Hitachi Ltd |
-
1970
- 1970-12-14 CA CA100,593A patent/CA957782A/en not_active Expired
-
1971
- 1971-01-21 DE DE19712102650 patent/DE2102650A1/de active Pending
- 1971-01-25 FR FR7102283A patent/FR2077319B1/fr not_active Expired
- 1971-01-25 BE BE762014A patent/BE762014A/xx unknown
- 1971-01-25 NL NL7100955A patent/NL7100955A/xx unknown
- 1971-04-19 GB GB2018371A patent/GB1341102A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CA957782A (en) | 1974-11-12 |
| BE762014A (fr) | 1971-07-01 |
| NL7100955A (enrdf_load_stackoverflow) | 1971-07-28 |
| FR2077319B1 (enrdf_load_stackoverflow) | 1977-01-28 |
| FR2077319A1 (enrdf_load_stackoverflow) | 1971-10-22 |
| GB1341102A (en) | 1973-12-19 |
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