DE2100540A1 - Gravity-free crystal prodn - in vacuo and esp in natural or artificial space vehicle - Google Patents
Gravity-free crystal prodn - in vacuo and esp in natural or artificial space vehicleInfo
- Publication number
- DE2100540A1 DE2100540A1 DE19712100540 DE2100540A DE2100540A1 DE 2100540 A1 DE2100540 A1 DE 2100540A1 DE 19712100540 DE19712100540 DE 19712100540 DE 2100540 A DE2100540 A DE 2100540A DE 2100540 A1 DE2100540 A1 DE 2100540A1
- Authority
- DE
- Germany
- Prior art keywords
- melt
- silicon
- ball
- floating
- rotation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 32
- 239000000155 melt Substances 0.000 claims abstract description 56
- 239000000463 material Substances 0.000 claims abstract description 20
- 239000012535 impurity Substances 0.000 claims abstract description 7
- 238000010894 electron beam technology Methods 0.000 claims abstract description 6
- 238000002425 crystallisation Methods 0.000 claims abstract description 4
- 230000008025 crystallization Effects 0.000 claims abstract description 4
- 239000004065 semiconductor Substances 0.000 claims abstract description 4
- 230000005684 electric field Effects 0.000 claims abstract 2
- 229910052710 silicon Inorganic materials 0.000 claims description 50
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 49
- 239000010703 silicon Substances 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 35
- 238000007667 floating Methods 0.000 claims description 21
- 239000007788 liquid Substances 0.000 claims description 14
- 230000000694 effects Effects 0.000 claims description 12
- 230000005855 radiation Effects 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 8
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000000289 melt material Substances 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 4
- 238000010309 melting process Methods 0.000 claims description 4
- 238000007711 solidification Methods 0.000 claims description 4
- 230000008023 solidification Effects 0.000 claims description 4
- 239000011344 liquid material Substances 0.000 claims description 3
- 238000007664 blowing Methods 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 210000003298 dental enamel Anatomy 0.000 claims 2
- 229910000831 Steel Inorganic materials 0.000 claims 1
- 238000009825 accumulation Methods 0.000 claims 1
- 239000010959 steel Substances 0.000 claims 1
- 230000001939 inductive effect Effects 0.000 abstract description 2
- 238000007670 refining Methods 0.000 abstract 2
- 239000000126 substance Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 4
- 239000011324 bead Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000005484 gravity Effects 0.000 description 4
- 238000004857 zone melting Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- LVQULNGDVIKLPK-UHFFFAOYSA-N aluminium antimonide Chemical compound [Sb]#[Al] LVQULNGDVIKLPK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical group [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- -1 helium ions Chemical class 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/005—Simultaneous pulling of more than one crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19712100540 DE2100540A1 (en) | 1971-01-07 | 1971-01-07 | Gravity-free crystal prodn - in vacuo and esp in natural or artificial space vehicle |
| US05/431,785 US3999950A (en) | 1971-01-07 | 1974-01-08 | Apparatus for crystal growth in outer space |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19712100540 DE2100540A1 (en) | 1971-01-07 | 1971-01-07 | Gravity-free crystal prodn - in vacuo and esp in natural or artificial space vehicle |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2100540A1 true DE2100540A1 (en) | 1972-08-17 |
| DE2100540B2 DE2100540B2 (enExample) | 1979-04-05 |
Family
ID=5795324
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712100540 Withdrawn DE2100540A1 (en) | 1971-01-07 | 1971-01-07 | Gravity-free crystal prodn - in vacuo and esp in natural or artificial space vehicle |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE2100540A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4046617A (en) * | 1975-09-05 | 1977-09-06 | Nasa | Method of crystallization |
| US4896849A (en) * | 1987-06-26 | 1990-01-30 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Sample levitation and melt in microgravity |
-
1971
- 1971-01-07 DE DE19712100540 patent/DE2100540A1/de not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4046617A (en) * | 1975-09-05 | 1977-09-06 | Nasa | Method of crystallization |
| US4896849A (en) * | 1987-06-26 | 1990-01-30 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Sample levitation and melt in microgravity |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2100540B2 (enExample) | 1979-04-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BHJ | Nonpayment of the annual fee |