DE2051929A1 - Halbleiterbauelement - Google Patents

Halbleiterbauelement

Info

Publication number
DE2051929A1
DE2051929A1 DE19702051929 DE2051929A DE2051929A1 DE 2051929 A1 DE2051929 A1 DE 2051929A1 DE 19702051929 DE19702051929 DE 19702051929 DE 2051929 A DE2051929 A DE 2051929A DE 2051929 A1 DE2051929 A1 DE 2051929A1
Authority
DE
Germany
Prior art keywords
contact
metal
semiconductor
semiconductor component
component according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19702051929
Other languages
German (de)
English (en)
Inventor
Ulf DipL-Phys. Dr.; Kokkotakis Nikolaus Dipl.-Phys. Dr.; Murrmann Helmuth Dipl.-Phys. Dr.; Koch Sigurd Dipl.-Ing.; 8000 München. HOIl 11-10 Bürker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DE19702051929 priority Critical patent/DE2051929A1/de
Priority to NL7113853A priority patent/NL7113853A/xx
Priority to GB4736471A priority patent/GB1311839A/en
Priority to FR7137436A priority patent/FR2111761B1/fr
Publication of DE2051929A1 publication Critical patent/DE2051929A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
DE19702051929 1970-10-22 1970-10-22 Halbleiterbauelement Ceased DE2051929A1 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE19702051929 DE2051929A1 (de) 1970-10-22 1970-10-22 Halbleiterbauelement
NL7113853A NL7113853A (enExample) 1970-10-22 1971-10-08
GB4736471A GB1311839A (en) 1970-10-22 1971-10-12 Semiconductor components
FR7137436A FR2111761B1 (enExample) 1970-10-22 1971-10-19

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702051929 DE2051929A1 (de) 1970-10-22 1970-10-22 Halbleiterbauelement

Publications (1)

Publication Number Publication Date
DE2051929A1 true DE2051929A1 (de) 1972-05-25

Family

ID=5785888

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19702051929 Ceased DE2051929A1 (de) 1970-10-22 1970-10-22 Halbleiterbauelement

Country Status (4)

Country Link
DE (1) DE2051929A1 (enExample)
FR (1) FR2111761B1 (enExample)
GB (1) GB1311839A (enExample)
NL (1) NL7113853A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55132068A (en) * 1979-03-30 1980-10-14 Ibm Pnp bipolar transistor
US4412376A (en) 1979-03-30 1983-11-01 Ibm Corporation Fabrication method for vertical PNP structure with Schottky barrier diode emitter utilizing ion implantation
USD343699S (en) 1991-06-27 1994-01-25 Yang Kuo Y W Lipstick applicator

Also Published As

Publication number Publication date
FR2111761B1 (enExample) 1977-03-18
GB1311839A (en) 1973-03-28
FR2111761A1 (enExample) 1972-06-09
NL7113853A (enExample) 1972-04-25

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Legal Events

Date Code Title Description
OF Willingness to grant licences before publication of examined application
8131 Rejection