DE2047342C3 - Zweirichtungs-Thyristortriode - Google Patents

Zweirichtungs-Thyristortriode

Info

Publication number
DE2047342C3
DE2047342C3 DE2047342A DE2047342A DE2047342C3 DE 2047342 C3 DE2047342 C3 DE 2047342C3 DE 2047342 A DE2047342 A DE 2047342A DE 2047342 A DE2047342 A DE 2047342A DE 2047342 C3 DE2047342 C3 DE 2047342C3
Authority
DE
Germany
Prior art keywords
control
electrode
region
area
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2047342A
Other languages
German (de)
English (en)
Other versions
DE2047342A1 (de
DE2047342B2 (de
Inventor
Tetsuo Tokio Machii
Masanobu Yokohama Suenaga
Syuji Yokohama Sugioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP827870A external-priority patent/JPS508314B1/ja
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of DE2047342A1 publication Critical patent/DE2047342A1/de
Publication of DE2047342B2 publication Critical patent/DE2047342B2/de
Application granted granted Critical
Publication of DE2047342C3 publication Critical patent/DE2047342C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/80—Bidirectional devices, e.g. triacs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Thyristors (AREA)
DE2047342A 1969-09-25 1970-09-25 Zweirichtungs-Thyristortriode Expired DE2047342C3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7610169 1969-09-25
JP827870A JPS508314B1 (enExample) 1970-01-31 1970-01-31

Publications (3)

Publication Number Publication Date
DE2047342A1 DE2047342A1 (de) 1971-04-01
DE2047342B2 DE2047342B2 (de) 1979-04-19
DE2047342C3 true DE2047342C3 (de) 1979-12-13

Family

ID=26342766

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2047342A Expired DE2047342C3 (de) 1969-09-25 1970-09-25 Zweirichtungs-Thyristortriode

Country Status (3)

Country Link
US (1) US3731162A (enExample)
DE (1) DE2047342C3 (enExample)
FR (1) FR2063016B1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3978513A (en) * 1971-05-21 1976-08-31 Hitachi, Ltd. Semiconductor controlled rectifying device
US3914783A (en) * 1971-10-01 1975-10-21 Hitachi Ltd Multi-layer semiconductor device
DE2211116A1 (de) * 1972-03-08 1973-09-13 Semikron Gleichrichterbau Steuerbares halbleiterbauelement mit vier schichten abwechselnd entgegengesetzten leitfaehigkeitstyps
JPS5532027B2 (enExample) * 1973-02-14 1980-08-22
DE2346256C3 (de) * 1973-09-13 1981-11-05 Siemens AG, 1000 Berlin und 8000 München Thyristor
DE2351783C3 (de) * 1973-10-16 1982-02-11 Brown, Boveri & Cie Ag, 6800 Mannheim Zweiweg-Halbleiterschalter (Triac)
JPS5413959B2 (enExample) * 1973-10-17 1979-06-04
DE2407696C3 (de) * 1974-02-18 1979-02-01 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor
DE2538549C2 (de) * 1975-08-29 1985-06-13 Siemens AG, 1000 Berlin und 8000 München Mit Licht steuerbarer Thyristor
US4130828A (en) * 1975-10-16 1978-12-19 Silec-Semi-Conducteurs Triac structure having improved triggering sensitivity with single groove extending from gate region
JPS52146570A (en) * 1976-05-31 1977-12-06 Toshiba Corp Reverse conducting thyristor
CH594988A5 (enExample) * 1976-06-02 1978-01-31 Bbc Brown Boveri & Cie
ZA775629B (en) * 1976-10-29 1978-08-30 Westinghouse Electric Corp An improvement in or relating to thyristor fired by collapsing voltage
DE2715482C2 (de) * 1977-04-06 1985-06-13 Siemens AG, 1000 Berlin und 8000 München Mit Licht steuerbarer Thyristor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1406185A (fr) * 1963-08-07 1965-07-16 Philips Nv Redresseur commandé et son procédé de fabrication
US3372318A (en) * 1965-01-22 1968-03-05 Gen Electric Semiconductor switches
US3364440A (en) * 1965-03-31 1968-01-16 Texas Instruments Inc Inverter circuits
CH447392A (de) * 1965-05-14 1967-11-30 Licentia Gmbh Gleichrichterschaltung
NL6813180A (enExample) * 1967-12-14 1969-06-17
US3577046A (en) * 1969-03-21 1971-05-04 Gen Electric Monolithic compound thyristor with a pilot portion having a metallic electrode with finger portions formed thereon

Also Published As

Publication number Publication date
FR2063016B1 (enExample) 1974-07-12
US3731162A (en) 1973-05-01
DE2047342A1 (de) 1971-04-01
DE2047342B2 (de) 1979-04-19
FR2063016A1 (enExample) 1971-07-02

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8320 Willingness to grant licences declared (paragraph 23)
8327 Change in the person/name/address of the patent owner

Owner name: KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP