DE2042313C3 - Halbleiterbauelement - Google Patents

Halbleiterbauelement

Info

Publication number
DE2042313C3
DE2042313C3 DE2042313A DE2042313A DE2042313C3 DE 2042313 C3 DE2042313 C3 DE 2042313C3 DE 2042313 A DE2042313 A DE 2042313A DE 2042313 A DE2042313 A DE 2042313A DE 2042313 C3 DE2042313 C3 DE 2042313C3
Authority
DE
Germany
Prior art keywords
semiconductor
semiconductor component
contact electrode
tunnel
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2042313A
Other languages
German (de)
English (en)
Other versions
DE2042313A1 (de
DE2042313B2 (de
Inventor
Alois Dr. Nussbaumen Marek (Schweiz)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
Original Assignee
BBC Brown Boveri AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri AG Switzerland filed Critical BBC Brown Boveri AG Switzerland
Publication of DE2042313A1 publication Critical patent/DE2042313A1/de
Publication of DE2042313B2 publication Critical patent/DE2042313B2/de
Application granted granted Critical
Publication of DE2042313C3 publication Critical patent/DE2042313C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE2042313A 1970-05-26 1970-08-26 Halbleiterbauelement Expired DE2042313C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH778670A CH516874A (de) 1970-05-26 1970-05-26 Halbleiterbauelement

Publications (3)

Publication Number Publication Date
DE2042313A1 DE2042313A1 (de) 1971-12-09
DE2042313B2 DE2042313B2 (de) 1978-07-27
DE2042313C3 true DE2042313C3 (de) 1979-03-29

Family

ID=4330449

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2042313A Expired DE2042313C3 (de) 1970-05-26 1970-08-26 Halbleiterbauelement

Country Status (8)

Country Link
US (1) US3746948A (enExample)
JP (1) JPS5329073B1 (enExample)
CH (1) CH516874A (enExample)
DE (1) DE2042313C3 (enExample)
FR (1) FR2090285B1 (enExample)
GB (1) GB1334943A (enExample)
NL (1) NL7107043A (enExample)
SE (1) SE358255B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0795675B2 (ja) * 1987-02-14 1995-10-11 富士通株式会社 比較回路
US5093692A (en) * 1990-11-09 1992-03-03 Menlo Industries, Inc. Tunnel diode detector for microwave frequency applications
CN100379018C (zh) * 2004-09-24 2008-04-02 中国科学院物理研究所 基于双势垒隧道结共振隧穿效应的晶体管

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2899652A (en) * 1959-08-11 Distance
US3176147A (en) * 1959-11-17 1965-03-30 Ibm Parallel connected two-terminal semiconductor devices of different negative resistance characteristics
US3459967A (en) * 1959-12-11 1969-08-05 Philips Corp Transistor switching using a tunnel diode
US3196330A (en) * 1960-06-10 1965-07-20 Gen Electric Semiconductor devices and methods of making same
NL281945A (enExample) * 1960-10-14 1900-01-01
DE1208408B (de) * 1961-06-05 1966-01-05 Gen Electric Steuerbares und schaltbares Halbleiterbauelement mit vier Schichten abwechselnd entgegengesetzten Leitungstyps
US3284639A (en) * 1963-02-19 1966-11-08 Westinghouse Electric Corp Semiconductor switch device of controlled rectifier type responsive to approximately equal gate signals of either polarity
DE1286645B (de) * 1963-06-05 1969-01-09 Siemens Ag Tunneltriode
US3265909A (en) * 1963-09-03 1966-08-09 Gen Electric Semiconductor switch comprising a controlled rectifier supplying base drive to a transistor
US3236698A (en) * 1964-04-08 1966-02-22 Clevite Corp Semiconductive device and method of making the same
US3398334A (en) * 1964-11-23 1968-08-20 Itt Semiconductor device having regions of different conductivity types wherein current is carried by the same type of carrier in all said regions
US3609413A (en) * 1969-11-03 1971-09-28 Fairchild Camera Instr Co Circuit for the protection of monolithic silicon-controlled rectifiers from false triggering
US3641403A (en) * 1970-05-25 1972-02-08 Mitsubishi Electric Corp Thyristor with degenerate semiconductive region

Also Published As

Publication number Publication date
US3746948A (en) 1973-07-17
CH516874A (de) 1971-12-15
SE358255B (enExample) 1973-07-23
NL7107043A (enExample) 1971-11-30
JPS5329073B1 (enExample) 1978-08-18
FR2090285B1 (enExample) 1974-03-08
DE2042313A1 (de) 1971-12-09
FR2090285A1 (enExample) 1972-01-14
GB1334943A (en) 1973-10-24
DE2042313B2 (de) 1978-07-27

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee