DE2032838A1 - Verfahren zum Herstellen einer Halb leiterzone durch Diffusion - Google Patents
Verfahren zum Herstellen einer Halb leiterzone durch DiffusionInfo
- Publication number
- DE2032838A1 DE2032838A1 DE19702032838 DE2032838A DE2032838A1 DE 2032838 A1 DE2032838 A1 DE 2032838A1 DE 19702032838 DE19702032838 DE 19702032838 DE 2032838 A DE2032838 A DE 2032838A DE 2032838 A1 DE2032838 A1 DE 2032838A1
- Authority
- DE
- Germany
- Prior art keywords
- diffusion
- material layer
- layer
- etching mask
- window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 title claims description 83
- 239000004065 semiconductor Substances 0.000 title claims description 23
- 238000000034 method Methods 0.000 title claims description 10
- 239000000463 material Substances 0.000 claims description 31
- 238000005530 etching Methods 0.000 claims description 13
- 239000011521 glass Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 230000002401 inhibitory effect Effects 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702032838 DE2032838A1 (de) | 1970-07-02 | 1970-07-02 | Verfahren zum Herstellen einer Halb leiterzone durch Diffusion |
| US00157440A US3791885A (en) | 1970-07-02 | 1971-06-28 | Method of manufacturing a semiconductor region |
| FR7124166A FR2097136B1 (enExample) | 1970-07-02 | 1971-07-01 | |
| GB3090471A GB1324298A (en) | 1970-07-02 | 1971-07-01 | Method of manufacturing a semi-conductor region |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702032838 DE2032838A1 (de) | 1970-07-02 | 1970-07-02 | Verfahren zum Herstellen einer Halb leiterzone durch Diffusion |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2032838A1 true DE2032838A1 (de) | 1972-01-13 |
Family
ID=5775627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19702032838 Pending DE2032838A1 (de) | 1970-07-02 | 1970-07-02 | Verfahren zum Herstellen einer Halb leiterzone durch Diffusion |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3791885A (enExample) |
| DE (1) | DE2032838A1 (enExample) |
| FR (1) | FR2097136B1 (enExample) |
| GB (1) | GB1324298A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3928081A (en) * | 1973-10-26 | 1975-12-23 | Signetics Corp | Method for fabricating semiconductor devices using composite mask and ion implantation |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1514807B2 (de) * | 1964-04-15 | 1971-09-02 | Texas Instruments Inc., Dallas. Tex. (V.St.A.) | Verfahren zum herstellen einer planaren halbleiteranordnung |
| US3507716A (en) * | 1966-09-02 | 1970-04-21 | Hitachi Ltd | Method of manufacturing semiconductor device |
| US3437533A (en) * | 1966-12-13 | 1969-04-08 | Rca Corp | Method of fabricating semiconductor devices |
| DE1764004A1 (de) * | 1968-03-20 | 1971-04-08 | Siemens Ag | Verfahren zum Herstellen eines Hochfrequenztransistors aus Silicium |
-
1970
- 1970-07-02 DE DE19702032838 patent/DE2032838A1/de active Pending
-
1971
- 1971-06-28 US US00157440A patent/US3791885A/en not_active Expired - Lifetime
- 1971-07-01 GB GB3090471A patent/GB1324298A/en not_active Expired
- 1971-07-01 FR FR7124166A patent/FR2097136B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1324298A (en) | 1973-07-25 |
| US3791885A (en) | 1974-02-12 |
| FR2097136B1 (enExample) | 1974-04-05 |
| FR2097136A1 (enExample) | 1972-03-03 |
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