FR2097136B1 - - Google Patents
Info
- Publication number
- FR2097136B1 FR2097136B1 FR7124166A FR7124166A FR2097136B1 FR 2097136 B1 FR2097136 B1 FR 2097136B1 FR 7124166 A FR7124166 A FR 7124166A FR 7124166 A FR7124166 A FR 7124166A FR 2097136 B1 FR2097136 B1 FR 2097136B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P95/00—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P32/141—
-
- H10P32/171—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702032838 DE2032838A1 (de) | 1970-07-02 | 1970-07-02 | Verfahren zum Herstellen einer Halb leiterzone durch Diffusion |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2097136A1 FR2097136A1 (enExample) | 1972-03-03 |
| FR2097136B1 true FR2097136B1 (enExample) | 1974-04-05 |
Family
ID=5775627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7124166A Expired FR2097136B1 (enExample) | 1970-07-02 | 1971-07-01 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3791885A (enExample) |
| DE (1) | DE2032838A1 (enExample) |
| FR (1) | FR2097136B1 (enExample) |
| GB (1) | GB1324298A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3928081A (en) * | 1973-10-26 | 1975-12-23 | Signetics Corp | Method for fabricating semiconductor devices using composite mask and ion implantation |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1514807B2 (de) * | 1964-04-15 | 1971-09-02 | Texas Instruments Inc., Dallas. Tex. (V.St.A.) | Verfahren zum herstellen einer planaren halbleiteranordnung |
| US3507716A (en) * | 1966-09-02 | 1970-04-21 | Hitachi Ltd | Method of manufacturing semiconductor device |
| US3437533A (en) * | 1966-12-13 | 1969-04-08 | Rca Corp | Method of fabricating semiconductor devices |
| DE1764004A1 (de) * | 1968-03-20 | 1971-04-08 | Siemens Ag | Verfahren zum Herstellen eines Hochfrequenztransistors aus Silicium |
-
1970
- 1970-07-02 DE DE19702032838 patent/DE2032838A1/de active Pending
-
1971
- 1971-06-28 US US00157440A patent/US3791885A/en not_active Expired - Lifetime
- 1971-07-01 GB GB3090471A patent/GB1324298A/en not_active Expired
- 1971-07-01 FR FR7124166A patent/FR2097136B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3791885A (en) | 1974-02-12 |
| GB1324298A (en) | 1973-07-25 |
| DE2032838A1 (de) | 1972-01-13 |
| FR2097136A1 (enExample) | 1972-03-03 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |