FR2097136B1 - - Google Patents
Info
- Publication number
- FR2097136B1 FR2097136B1 FR7124166A FR7124166A FR2097136B1 FR 2097136 B1 FR2097136 B1 FR 2097136B1 FR 7124166 A FR7124166 A FR 7124166A FR 7124166 A FR7124166 A FR 7124166A FR 2097136 B1 FR2097136 B1 FR 2097136B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19702032838 DE2032838A1 (de) | 1970-07-02 | 1970-07-02 | Verfahren zum Herstellen einer Halb leiterzone durch Diffusion |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2097136A1 FR2097136A1 (enExample) | 1972-03-03 |
| FR2097136B1 true FR2097136B1 (enExample) | 1974-04-05 |
Family
ID=5775627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7124166A Expired FR2097136B1 (enExample) | 1970-07-02 | 1971-07-01 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3791885A (enExample) |
| DE (1) | DE2032838A1 (enExample) |
| FR (1) | FR2097136B1 (enExample) |
| GB (1) | GB1324298A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3928081A (en) * | 1973-10-26 | 1975-12-23 | Signetics Corp | Method for fabricating semiconductor devices using composite mask and ion implantation |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1514807B2 (de) * | 1964-04-15 | 1971-09-02 | Texas Instruments Inc., Dallas. Tex. (V.St.A.) | Verfahren zum herstellen einer planaren halbleiteranordnung |
| US3507716A (en) * | 1966-09-02 | 1970-04-21 | Hitachi Ltd | Method of manufacturing semiconductor device |
| US3437533A (en) * | 1966-12-13 | 1969-04-08 | Rca Corp | Method of fabricating semiconductor devices |
| DE1764004A1 (de) * | 1968-03-20 | 1971-04-08 | Siemens Ag | Verfahren zum Herstellen eines Hochfrequenztransistors aus Silicium |
-
1970
- 1970-07-02 DE DE19702032838 patent/DE2032838A1/de active Pending
-
1971
- 1971-06-28 US US00157440A patent/US3791885A/en not_active Expired - Lifetime
- 1971-07-01 GB GB3090471A patent/GB1324298A/en not_active Expired
- 1971-07-01 FR FR7124166A patent/FR2097136B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1324298A (en) | 1973-07-25 |
| US3791885A (en) | 1974-02-12 |
| DE2032838A1 (de) | 1972-01-13 |
| FR2097136A1 (enExample) | 1972-03-03 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |