DE2030284A1 - Planar Epitaxial Transistor - Google Patents
Planar Epitaxial TransistorInfo
- Publication number
- DE2030284A1 DE2030284A1 DE19702030284 DE2030284A DE2030284A1 DE 2030284 A1 DE2030284 A1 DE 2030284A1 DE 19702030284 DE19702030284 DE 19702030284 DE 2030284 A DE2030284 A DE 2030284A DE 2030284 A1 DE2030284 A1 DE 2030284A1
- Authority
- DE
- Germany
- Prior art keywords
- base
- transistor
- area
- region
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 22
- 239000012535 impurity Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 21
- 239000000370 acceptor Substances 0.000 description 11
- 230000007704 transition Effects 0.000 description 9
- 239000000969 carrier Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 230000000873 masking effect Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 206010039509 Scab Diseases 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/137—Collector regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
Landscapes
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT1859369 | 1969-06-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2030284A1 true DE2030284A1 (de) | 1971-01-28 |
Family
ID=11153025
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19702030284 Pending DE2030284A1 (de) | 1969-06-24 | 1970-06-19 | Planar Epitaxial Transistor |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE2030284A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2047906A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1259069A (enrdf_load_stackoverflow) |
| NL (1) | NL7007396A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0012545A1 (en) * | 1978-12-04 | 1980-06-25 | Western Electric Company, Incorporated | Semiconductor integrated circuit and fabrication method |
| EP0038697B1 (en) * | 1980-04-22 | 1984-12-12 | Semiconductor Research Foundation | Semiconductor image sensor |
-
1970
- 1970-05-22 NL NL7007396A patent/NL7007396A/xx unknown
- 1970-06-17 GB GB1259069D patent/GB1259069A/en not_active Expired
- 1970-06-19 DE DE19702030284 patent/DE2030284A1/de active Pending
- 1970-06-23 FR FR7023202A patent/FR2047906A1/fr not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| GB1259069A (enrdf_load_stackoverflow) | 1972-01-05 |
| FR2047906A1 (enrdf_load_stackoverflow) | 1971-03-19 |
| NL7007396A (enrdf_load_stackoverflow) | 1970-12-29 |
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