DE2023501A1 - - Google Patents
Info
- Publication number
- DE2023501A1 DE2023501A1 DE19702023501 DE2023501A DE2023501A1 DE 2023501 A1 DE2023501 A1 DE 2023501A1 DE 19702023501 DE19702023501 DE 19702023501 DE 2023501 A DE2023501 A DE 2023501A DE 2023501 A1 DE2023501 A1 DE 2023501A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- resistance
- screen
- state
- conductive material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims description 115
- 239000004065 semiconductor Substances 0.000 claims description 50
- 239000004020 conductor Substances 0.000 claims description 20
- 239000011232 storage material Substances 0.000 claims description 16
- 230000008859 change Effects 0.000 claims description 14
- 230000000694 effects Effects 0.000 claims description 9
- 230000000903 blocking effect Effects 0.000 claims description 8
- 238000004020 luminiscence type Methods 0.000 claims description 3
- 108090000623 proteins and genes Proteins 0.000 claims description 2
- 230000005284 excitation Effects 0.000 claims 2
- 238000010521 absorption reaction Methods 0.000 claims 1
- 230000005855 radiation Effects 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 238000003860 storage Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 241000208140 Acer Species 0.000 description 1
- 101100031648 Rattus norvegicus Ptms gene Proteins 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 101150046432 Tril gene Proteins 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000036461 convulsion Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
Landscapes
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US82528969A | 1969-05-16 | 1969-05-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2023501A1 true DE2023501A1 (enrdf_load_stackoverflow) | 1970-11-19 |
Family
ID=25243619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19702023501 Pending DE2023501A1 (enrdf_load_stackoverflow) | 1969-05-16 | 1970-05-13 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3644741A (enrdf_load_stackoverflow) |
| CA (1) | CA920688A (enrdf_load_stackoverflow) |
| DE (1) | DE2023501A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2047857A5 (enrdf_load_stackoverflow) |
| GB (1) | GB1316605A (enrdf_load_stackoverflow) |
| NL (1) | NL7007097A (enrdf_load_stackoverflow) |
| SE (1) | SE364161B (enrdf_load_stackoverflow) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3886530A (en) * | 1969-06-02 | 1975-05-27 | Massachusetts Inst Technology | Signal storage device |
| US3825791A (en) * | 1972-06-30 | 1974-07-23 | Ibm | Field-effect storage tube |
| US3967112A (en) * | 1973-06-15 | 1976-06-29 | Sharp Kabushiki Kaisha | Photo-image memory panel and activating method thereof |
| US4024389A (en) * | 1973-06-15 | 1977-05-17 | Sharp Kabushiki Kaisha | Photo-image memory panel and activating method therefor |
| US3961314A (en) * | 1974-03-05 | 1976-06-01 | Energy Conversion Devices, Inc. | Structure and method for producing an image |
| US4059443A (en) * | 1975-01-09 | 1977-11-22 | Xerox Corporation | Electrical information storage system |
| US4221002A (en) * | 1978-11-06 | 1980-09-02 | International Business Machines Corporation | Electro-optically matrix-addressed electroluminescence display with memory |
| JPS5713777A (en) | 1980-06-30 | 1982-01-23 | Shunpei Yamazaki | Semiconductor device and manufacture thereof |
| US5859443A (en) * | 1980-06-30 | 1999-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US6900463B1 (en) | 1980-06-30 | 2005-05-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US5262350A (en) * | 1980-06-30 | 1993-11-16 | Semiconductor Energy Laboratory Co., Ltd. | Forming a non single crystal semiconductor layer by using an electric current |
| USRE34658E (en) * | 1980-06-30 | 1994-07-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device of non-single crystal-structure |
| US4518891A (en) * | 1981-12-31 | 1985-05-21 | International Business Machines Corporation | Resistive mesh structure for electroluminescent cell |
| JPS60124397A (ja) * | 1983-12-08 | 1985-07-03 | コーア株式会社 | エレクトロルミネツセンス素子 |
| US5312684A (en) * | 1991-05-02 | 1994-05-17 | Dow Corning Corporation | Threshold switching device |
| US5698262A (en) * | 1996-05-06 | 1997-12-16 | Libbey-Owens-Ford Co. | Method for forming tin oxide coating on glass |
| EP1344886A1 (de) * | 2002-03-12 | 2003-09-17 | Maria Krimmel | Schiebeelementanlage |
| US6987689B2 (en) * | 2003-08-20 | 2006-01-17 | International Business Machines Corporation | Non-volatile multi-stable memory device and methods of making and using the same |
| US7317566B2 (en) * | 2005-08-29 | 2008-01-08 | Teledyne Licensing, Llc | Electrode with transparent series resistance for uniform switching of optical modulation devices |
-
1969
- 1969-05-16 US US825289A patent/US3644741A/en not_active Expired - Lifetime
-
1970
- 1970-05-08 GB GB2236770A patent/GB1316605A/en not_active Expired
- 1970-05-13 DE DE19702023501 patent/DE2023501A1/de active Pending
- 1970-05-15 SE SE06699/70A patent/SE364161B/xx unknown
- 1970-05-15 NL NL7007097A patent/NL7007097A/xx unknown
- 1970-05-15 FR FR7017915A patent/FR2047857A5/fr not_active Expired
- 1970-05-15 CA CA082930A patent/CA920688A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2047857A5 (enrdf_load_stackoverflow) | 1971-03-12 |
| NL7007097A (enrdf_load_stackoverflow) | 1970-11-18 |
| SE364161B (enrdf_load_stackoverflow) | 1974-02-11 |
| CA920688A (en) | 1973-02-06 |
| GB1316605A (en) | 1973-05-09 |
| US3644741A (en) | 1972-02-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| SH | Request for examination between 03.10.1968 and 22.04.1971 |