DE2015815B2 - Schutzschaltung fuer einen integrierten schaltkreis - Google Patents
Schutzschaltung fuer einen integrierten schaltkreisInfo
- Publication number
- DE2015815B2 DE2015815B2 DE19702015815 DE2015815A DE2015815B2 DE 2015815 B2 DE2015815 B2 DE 2015815B2 DE 19702015815 DE19702015815 DE 19702015815 DE 2015815 A DE2015815 A DE 2015815A DE 2015815 B2 DE2015815 B2 DE 2015815B2
- Authority
- DE
- Germany
- Prior art keywords
- diode
- circuit
- voltage
- protective
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 230000001681 protective effect Effects 0.000 title claims description 20
- 239000000758 substrate Substances 0.000 claims description 48
- 230000015556 catabolic process Effects 0.000 claims description 10
- 230000003068 static effect Effects 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000008901 benefit Effects 0.000 claims description 3
- 230000000295 complement effect Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 230000005669 field effect Effects 0.000 claims 3
- 230000004913 activation Effects 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 claims 1
- 230000001419 dependent effect Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
- H02H7/205—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment for controlled semi-conductors which are not included in a specific circuit arrangement
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US81781069A | 1969-04-21 | 1969-04-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2015815A1 DE2015815A1 (de) | 1970-11-05 |
| DE2015815B2 true DE2015815B2 (de) | 1976-06-24 |
Family
ID=25223925
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19702015815 Ceased DE2015815B2 (de) | 1969-04-21 | 1970-04-02 | Schutzschaltung fuer einen integrierten schaltkreis |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS4830189B1 (enrdf_load_stackoverflow) |
| DE (1) | DE2015815B2 (enrdf_load_stackoverflow) |
| GB (1) | GB1305491A (enrdf_load_stackoverflow) |
| MY (1) | MY7400036A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3144169A1 (de) * | 1980-11-07 | 1982-07-22 | Hitachi Microcomputer Engineering Ltd., Tokyo | Integrierte halbleiterschaltung |
| DE3435751A1 (de) * | 1984-09-28 | 1986-04-10 | Siemens AG, 1000 Berlin und 8000 München | Integrierte halbleiterschaltung in komplementaerer schaltungstechnik mit ueberspannungsschutz-struktur |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5431672B2 (enrdf_load_stackoverflow) * | 1973-05-02 | 1979-10-08 | ||
| DE2539890B2 (de) * | 1975-09-08 | 1978-06-01 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Schaltungsanordnung zum Schutz von Eingängen integrierter MOS-Schaltkreise |
| NL176322C (nl) * | 1976-02-24 | 1985-03-18 | Philips Nv | Halfgeleiderinrichting met beveiligingsschakeling. |
| SE441487B (sv) * | 1984-02-27 | 1985-10-07 | Bengt Gustaf Olsson | Skyddsanordning |
| US4739437A (en) * | 1986-10-22 | 1988-04-19 | Siemens-Pacesetter, Inc. | Pacemaker output switch protection |
| US5272097A (en) * | 1992-04-07 | 1993-12-21 | Philip Shiota | Method for fabricating diodes for electrostatic discharge protection and voltage references |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US335685A (en) * | 1886-02-09 | Wagon end-gate |
-
1970
- 1970-04-02 DE DE19702015815 patent/DE2015815B2/de not_active Ceased
- 1970-04-14 GB GB1768370A patent/GB1305491A/en not_active Expired
- 1970-04-20 JP JP45033712A patent/JPS4830189B1/ja active Pending
-
1974
- 1974-12-30 MY MY36/74A patent/MY7400036A/xx unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3144169A1 (de) * | 1980-11-07 | 1982-07-22 | Hitachi Microcomputer Engineering Ltd., Tokyo | Integrierte halbleiterschaltung |
| DE3435751A1 (de) * | 1984-09-28 | 1986-04-10 | Siemens AG, 1000 Berlin und 8000 München | Integrierte halbleiterschaltung in komplementaerer schaltungstechnik mit ueberspannungsschutz-struktur |
Also Published As
| Publication number | Publication date |
|---|---|
| MY7400036A (en) | 1974-12-31 |
| DE2015815A1 (de) | 1970-11-05 |
| GB1305491A (enrdf_load_stackoverflow) | 1973-01-31 |
| JPS4830189B1 (enrdf_load_stackoverflow) | 1973-09-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8235 | Patent refused |