DE2012927C3 - Verfahren zum Dotieren von Halbleitermaterial - Google Patents

Verfahren zum Dotieren von Halbleitermaterial

Info

Publication number
DE2012927C3
DE2012927C3 DE19702012927 DE2012927A DE2012927C3 DE 2012927 C3 DE2012927 C3 DE 2012927C3 DE 19702012927 DE19702012927 DE 19702012927 DE 2012927 A DE2012927 A DE 2012927A DE 2012927 C3 DE2012927 C3 DE 2012927C3
Authority
DE
Germany
Prior art keywords
dopant
diffusion
semiconductor
solvent
doping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE19702012927
Other languages
German (de)
English (en)
Other versions
DE2012927B2 (de
DE2012927A1 (de
Inventor
Rikusei Ibaragi Kohara (Japan)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of DE2012927A1 publication Critical patent/DE2012927A1/de
Publication of DE2012927B2 publication Critical patent/DE2012927B2/de
Application granted granted Critical
Publication of DE2012927C3 publication Critical patent/DE2012927C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Formation Of Insulating Films (AREA)
  • Sampling And Sample Adjustment (AREA)
DE19702012927 1969-03-20 1970-03-18 Verfahren zum Dotieren von Halbleitermaterial Expired DE2012927C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2252569A JPS4822536B1 (enrdf_load_stackoverflow) 1969-03-20 1969-03-20

Publications (3)

Publication Number Publication Date
DE2012927A1 DE2012927A1 (de) 1970-09-24
DE2012927B2 DE2012927B2 (de) 1972-04-20
DE2012927C3 true DE2012927C3 (de) 1975-05-07

Family

ID=12085187

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19702012927 Expired DE2012927C3 (de) 1969-03-20 1970-03-18 Verfahren zum Dotieren von Halbleitermaterial

Country Status (4)

Country Link
JP (1) JPS4822536B1 (enrdf_load_stackoverflow)
DE (1) DE2012927C3 (enrdf_load_stackoverflow)
FR (1) FR2041088A1 (enrdf_load_stackoverflow)
GB (1) GB1274362A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2007752B2 (de) * 1970-02-19 1978-07-27 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von dotiertem Halbleitermaterial
JPS52145777U (enrdf_load_stackoverflow) * 1976-04-28 1977-11-04
US20090286349A1 (en) * 2008-05-13 2009-11-19 Georgia Tech Research Corporation Solar cell spin-on based process for simultaneous diffusion and passivation

Also Published As

Publication number Publication date
JPS4822536B1 (enrdf_load_stackoverflow) 1973-07-06
DE2012927B2 (de) 1972-04-20
FR2041088A1 (enrdf_load_stackoverflow) 1971-01-29
GB1274362A (en) 1972-05-17
DE2012927A1 (de) 1970-09-24

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
E77 Valid patent as to the heymanns-index 1977
EHJ Ceased/non-payment of the annual fee