JPS4822536B1 - - Google Patents

Info

Publication number
JPS4822536B1
JPS4822536B1 JP2252569A JP2252569A JPS4822536B1 JP S4822536 B1 JPS4822536 B1 JP S4822536B1 JP 2252569 A JP2252569 A JP 2252569A JP 2252569 A JP2252569 A JP 2252569A JP S4822536 B1 JPS4822536 B1 JP S4822536B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2252569A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2252569A priority Critical patent/JPS4822536B1/ja
Priority to GB1258070A priority patent/GB1274362A/en
Priority to DE19702012927 priority patent/DE2012927C3/de
Priority to FR7009865A priority patent/FR2041088A1/fr
Publication of JPS4822536B1 publication Critical patent/JPS4822536B1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Formation Of Insulating Films (AREA)
  • Sampling And Sample Adjustment (AREA)
JP2252569A 1969-03-20 1969-03-20 Pending JPS4822536B1 (enrdf_load_stackoverflow)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2252569A JPS4822536B1 (enrdf_load_stackoverflow) 1969-03-20 1969-03-20
GB1258070A GB1274362A (en) 1969-03-20 1970-03-16 Method of diffusing impurity elements into a semiconductor
DE19702012927 DE2012927C3 (de) 1969-03-20 1970-03-18 Verfahren zum Dotieren von Halbleitermaterial
FR7009865A FR2041088A1 (enrdf_load_stackoverflow) 1969-03-20 1970-03-19

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2252569A JPS4822536B1 (enrdf_load_stackoverflow) 1969-03-20 1969-03-20

Publications (1)

Publication Number Publication Date
JPS4822536B1 true JPS4822536B1 (enrdf_load_stackoverflow) 1973-07-06

Family

ID=12085187

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2252569A Pending JPS4822536B1 (enrdf_load_stackoverflow) 1969-03-20 1969-03-20

Country Status (4)

Country Link
JP (1) JPS4822536B1 (enrdf_load_stackoverflow)
DE (1) DE2012927C3 (enrdf_load_stackoverflow)
FR (1) FR2041088A1 (enrdf_load_stackoverflow)
GB (1) GB1274362A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52145777U (enrdf_load_stackoverflow) * 1976-04-28 1977-11-04

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2007752B2 (de) * 1970-02-19 1978-07-27 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von dotiertem Halbleitermaterial
US20090286349A1 (en) * 2008-05-13 2009-11-19 Georgia Tech Research Corporation Solar cell spin-on based process for simultaneous diffusion and passivation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52145777U (enrdf_load_stackoverflow) * 1976-04-28 1977-11-04

Also Published As

Publication number Publication date
DE2012927B2 (de) 1972-04-20
FR2041088A1 (enrdf_load_stackoverflow) 1971-01-29
GB1274362A (en) 1972-05-17
DE2012927A1 (de) 1970-09-24
DE2012927C3 (de) 1975-05-07

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