GB1274362A - Method of diffusing impurity elements into a semiconductor - Google Patents

Method of diffusing impurity elements into a semiconductor

Info

Publication number
GB1274362A
GB1274362A GB1258070A GB1258070A GB1274362A GB 1274362 A GB1274362 A GB 1274362A GB 1258070 A GB1258070 A GB 1258070A GB 1258070 A GB1258070 A GB 1258070A GB 1274362 A GB1274362 A GB 1274362A
Authority
GB
United Kingdom
Prior art keywords
substrate
impurity
semiconductor
diffused
dioxane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1258070A
Inventor
Rikusei Kohara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of GB1274362A publication Critical patent/GB1274362A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Formation Of Insulating Films (AREA)
  • Sampling And Sample Adjustment (AREA)

Abstract

1,274,362. Semi-conductors. MATSUSHITA ELECTRONICS CORP. 16 March, 1970 [20 March, 1969], No. 12580/70. Heading H1K. Impurity elements are diffused into a semiconductor, e.g. silicon substrate, to give N- or P-type conductivities, by dissolving an impurity compound, e.g. phosphorous pentoxide, phosphoric acid, arsenic trioxide, arsenic trichloride, antimony trichloride, diboron trioxide, aluminium chloride, gallium chloride, indium chloride; into a volatile solvent, e.g. water ethanol, ethyl cellosolve, methanol, ethyl ether, amylacetate, acetone, dioxane, acetic acid esters, dioxane; together with an organic coating material, e.g. pyroxylin, acetyl cellulose, polyvinyl acetate, polyvinyl alcohol; the mixture being coated on the substrate and the solvent evaporated; after which the impurity is diffused into the substrate by heating. Autoradiography of the substrate after diffusion of labelled phosphorus impurity shows the distribution thereof.
GB1258070A 1969-03-20 1970-03-16 Method of diffusing impurity elements into a semiconductor Expired GB1274362A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2252569A JPS4822536B1 (en) 1969-03-20 1969-03-20

Publications (1)

Publication Number Publication Date
GB1274362A true GB1274362A (en) 1972-05-17

Family

ID=12085187

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1258070A Expired GB1274362A (en) 1969-03-20 1970-03-16 Method of diffusing impurity elements into a semiconductor

Country Status (4)

Country Link
JP (1) JPS4822536B1 (en)
DE (1) DE2012927C3 (en)
FR (1) FR2041088A1 (en)
GB (1) GB1274362A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009140116A2 (en) * 2008-05-13 2009-11-19 Georgia Tech Research Corporation Solar cell spin-on based process for simultaneous diffusion and passivation

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2007752B2 (en) * 1970-02-19 1978-07-27 Siemens Ag, 1000 Berlin Und 8000 Muenchen Process for the production of doped semiconductor material
JPS52145777U (en) * 1976-04-28 1977-11-04

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009140116A2 (en) * 2008-05-13 2009-11-19 Georgia Tech Research Corporation Solar cell spin-on based process for simultaneous diffusion and passivation
WO2009140116A3 (en) * 2008-05-13 2010-10-21 Georgia Tech Research Corporation Solar cell spin-on based process for simultaneous diffusion and passivation

Also Published As

Publication number Publication date
FR2041088A1 (en) 1971-01-29
DE2012927B2 (en) 1972-04-20
DE2012927C3 (en) 1975-05-07
JPS4822536B1 (en) 1973-07-06
DE2012927A1 (en) 1970-09-24

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee