DE19960234A1 - Halbleitervorrichtung und zugehöriges Herstellungsverfahren - Google Patents
Halbleitervorrichtung und zugehöriges HerstellungsverfahrenInfo
- Publication number
- DE19960234A1 DE19960234A1 DE19960234A DE19960234A DE19960234A1 DE 19960234 A1 DE19960234 A1 DE 19960234A1 DE 19960234 A DE19960234 A DE 19960234A DE 19960234 A DE19960234 A DE 19960234A DE 19960234 A1 DE19960234 A1 DE 19960234A1
- Authority
- DE
- Germany
- Prior art keywords
- region
- buried
- type semiconductor
- anode
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/411—PN diodes having planar bodies
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10429999A JP4597284B2 (ja) | 1999-04-12 | 1999-04-12 | 半導体装置およびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE19960234A1 true DE19960234A1 (de) | 2000-10-26 |
Family
ID=14377056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19960234A Withdrawn DE19960234A1 (de) | 1999-04-12 | 1999-12-14 | Halbleitervorrichtung und zugehöriges Herstellungsverfahren |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6191466B1 (enExample) |
| JP (1) | JP4597284B2 (enExample) |
| KR (1) | KR100316040B1 (enExample) |
| DE (1) | DE19960234A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6683334B2 (en) | 2002-03-12 | 2004-01-27 | Microsemi Corporation | Compound semiconductor protection device for low voltage and high speed data lines |
| US20050155680A1 (en) * | 2004-01-16 | 2005-07-21 | Gyorgy Nagy | High ductility, high hot tensile strength tungsten wire and method of manufacture |
| US7626243B2 (en) * | 2006-08-04 | 2009-12-01 | Advanced Analogic Technologies, Inc. | ESD protection for bipolar-CMOS-DMOS integrated circuit devices |
| DE102007024355B4 (de) * | 2007-05-24 | 2011-04-21 | Infineon Technologies Ag | Verfahren zum Herstellen einer Schutzstruktur |
| JP5172654B2 (ja) | 2008-12-27 | 2013-03-27 | 株式会社東芝 | 半導体装置 |
| FR2978614B1 (fr) * | 2011-07-25 | 2014-09-05 | Altis Semiconductor Snc | Substrat semi-conducteur comprenant des zones dopees formant une jonction p-n |
| US9202940B2 (en) * | 2011-09-28 | 2015-12-01 | Mitsubishi Electric Corporation | Semiconductor device |
| US9401355B2 (en) * | 2011-12-16 | 2016-07-26 | Infineon Technologies Ag | Semiconductor device including a diode arranged in a trench |
| US9385181B2 (en) * | 2014-01-23 | 2016-07-05 | Infineon Technologies Ag | Semiconductor diode and method of manufacturing a semiconductor diode |
| JP6685962B2 (ja) * | 2017-03-23 | 2020-04-22 | 株式会社東芝 | 半導体装置 |
| WO2023090277A1 (ja) * | 2021-11-22 | 2023-05-25 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置及び光検出装置 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55134983A (en) * | 1979-04-09 | 1980-10-21 | Ibm | Surface breakdown zener diode |
| SE427598B (sv) * | 1981-08-25 | 1983-04-18 | Ericsson Telefon Ab L M | Halvledardiod avsedd att inga i integrerade kretsar |
| JPH02146458A (ja) | 1988-11-29 | 1990-06-05 | Matsushita Electric Ind Co Ltd | 給湯システム |
| JPH0474478A (ja) * | 1990-07-16 | 1992-03-09 | Matsushita Electron Corp | ダイオード |
| JPH04299855A (ja) * | 1991-03-28 | 1992-10-23 | Nec Corp | 半導体集積回路 |
| US5578862A (en) * | 1992-12-30 | 1996-11-26 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor integrated circuit with layer for isolating elements in substrate |
| FR2702308B1 (fr) * | 1993-03-01 | 1995-05-24 | Sgs Thomson Microelectronics | Diode à avalanche dans un circuit intégré bipolaire. |
| FR2708145B1 (fr) * | 1993-07-21 | 1995-10-06 | Sgs Thomson Microelectronics | Composant monolithique comprenant une diode de protection en parallèle avec une pluralité de paires de diodes en série. |
| US5477078A (en) * | 1994-02-18 | 1995-12-19 | Analog Devices, Incorporated | Integrated circuit (IC) with a two-terminal diode device to protect metal-oxide-metal capacitors from ESD damage |
| EP0685891B1 (en) * | 1994-05-31 | 2001-08-08 | STMicroelectronics S.r.l. | Integrated semiconductor diode |
| JP3459532B2 (ja) | 1996-06-28 | 2003-10-20 | 三洋電機株式会社 | 半導体集積回路およびその製造方法 |
| JPH11121768A (ja) * | 1997-10-20 | 1999-04-30 | Nec Corp | 半導体集積回路 |
-
1999
- 1999-04-12 JP JP10429999A patent/JP4597284B2/ja not_active Expired - Fee Related
- 1999-09-14 US US09/395,939 patent/US6191466B1/en not_active Expired - Lifetime
- 1999-12-14 DE DE19960234A patent/DE19960234A1/de not_active Withdrawn
- 1999-12-18 KR KR1019990058959A patent/KR100316040B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR20000067831A (ko) | 2000-11-25 |
| JP2000299477A (ja) | 2000-10-24 |
| KR100316040B1 (ko) | 2001-12-12 |
| US6191466B1 (en) | 2001-02-20 |
| JP4597284B2 (ja) | 2010-12-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| 8130 | Withdrawal |