KR100316040B1 - 반도체 장치 및 그 제조 방법 - Google Patents

반도체 장치 및 그 제조 방법 Download PDF

Info

Publication number
KR100316040B1
KR100316040B1 KR1019990058959A KR19990058959A KR100316040B1 KR 100316040 B1 KR100316040 B1 KR 100316040B1 KR 1019990058959 A KR1019990058959 A KR 1019990058959A KR 19990058959 A KR19990058959 A KR 19990058959A KR 100316040 B1 KR100316040 B1 KR 100316040B1
Authority
KR
South Korea
Prior art keywords
region
anode
cathode
semiconductor device
buried layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019990058959A
Other languages
English (en)
Korean (ko)
Other versions
KR20000067831A (ko
Inventor
야마시따야스노리
데라시마도모히데
야마모또후미또시
Original Assignee
다니구찌 이찌로오, 기타오카 다카시
미쓰비시덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 다니구찌 이찌로오, 기타오카 다카시, 미쓰비시덴키 가부시키가이샤 filed Critical 다니구찌 이찌로오, 기타오카 다카시
Publication of KR20000067831A publication Critical patent/KR20000067831A/ko
Application granted granted Critical
Publication of KR100316040B1 publication Critical patent/KR100316040B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
KR1019990058959A 1999-04-12 1999-12-18 반도체 장치 및 그 제조 방법 Expired - Fee Related KR100316040B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1999-104299 1999-04-12
JP10429999A JP4597284B2 (ja) 1999-04-12 1999-04-12 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
KR20000067831A KR20000067831A (ko) 2000-11-25
KR100316040B1 true KR100316040B1 (ko) 2001-12-12

Family

ID=14377056

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990058959A Expired - Fee Related KR100316040B1 (ko) 1999-04-12 1999-12-18 반도체 장치 및 그 제조 방법

Country Status (4)

Country Link
US (1) US6191466B1 (enExample)
JP (1) JP4597284B2 (enExample)
KR (1) KR100316040B1 (enExample)
DE (1) DE19960234A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6683334B2 (en) 2002-03-12 2004-01-27 Microsemi Corporation Compound semiconductor protection device for low voltage and high speed data lines
US20050155680A1 (en) * 2004-01-16 2005-07-21 Gyorgy Nagy High ductility, high hot tensile strength tungsten wire and method of manufacture
US7626243B2 (en) * 2006-08-04 2009-12-01 Advanced Analogic Technologies, Inc. ESD protection for bipolar-CMOS-DMOS integrated circuit devices
DE102007024355B4 (de) * 2007-05-24 2011-04-21 Infineon Technologies Ag Verfahren zum Herstellen einer Schutzstruktur
JP5172654B2 (ja) 2008-12-27 2013-03-27 株式会社東芝 半導体装置
FR2978614B1 (fr) * 2011-07-25 2014-09-05 Altis Semiconductor Snc Substrat semi-conducteur comprenant des zones dopees formant une jonction p-n
US9202940B2 (en) * 2011-09-28 2015-12-01 Mitsubishi Electric Corporation Semiconductor device
US9401355B2 (en) * 2011-12-16 2016-07-26 Infineon Technologies Ag Semiconductor device including a diode arranged in a trench
US9385181B2 (en) * 2014-01-23 2016-07-05 Infineon Technologies Ag Semiconductor diode and method of manufacturing a semiconductor diode
JP6685962B2 (ja) * 2017-03-23 2020-04-22 株式会社東芝 半導体装置
WO2023090277A1 (ja) * 2021-11-22 2023-05-25 ソニーセミコンダクタソリューションズ株式会社 半導体装置及び光検出装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55134983A (en) * 1979-04-09 1980-10-21 Ibm Surface breakdown zener diode
SE427598B (sv) * 1981-08-25 1983-04-18 Ericsson Telefon Ab L M Halvledardiod avsedd att inga i integrerade kretsar
JPH02146458A (ja) 1988-11-29 1990-06-05 Matsushita Electric Ind Co Ltd 給湯システム
JPH0474478A (ja) * 1990-07-16 1992-03-09 Matsushita Electron Corp ダイオード
JPH04299855A (ja) * 1991-03-28 1992-10-23 Nec Corp 半導体集積回路
US5578862A (en) * 1992-12-30 1996-11-26 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit with layer for isolating elements in substrate
FR2702308B1 (fr) * 1993-03-01 1995-05-24 Sgs Thomson Microelectronics Diode à avalanche dans un circuit intégré bipolaire.
FR2708145B1 (fr) * 1993-07-21 1995-10-06 Sgs Thomson Microelectronics Composant monolithique comprenant une diode de protection en parallèle avec une pluralité de paires de diodes en série.
US5477078A (en) * 1994-02-18 1995-12-19 Analog Devices, Incorporated Integrated circuit (IC) with a two-terminal diode device to protect metal-oxide-metal capacitors from ESD damage
EP0685891B1 (en) * 1994-05-31 2001-08-08 STMicroelectronics S.r.l. Integrated semiconductor diode
JP3459532B2 (ja) 1996-06-28 2003-10-20 三洋電機株式会社 半導体集積回路およびその製造方法
JPH11121768A (ja) * 1997-10-20 1999-04-30 Nec Corp 半導体集積回路

Also Published As

Publication number Publication date
DE19960234A1 (de) 2000-10-26
KR20000067831A (ko) 2000-11-25
JP2000299477A (ja) 2000-10-24
US6191466B1 (en) 2001-02-20
JP4597284B2 (ja) 2010-12-15

Similar Documents

Publication Publication Date Title
KR101745776B1 (ko) 전력용 반도체 소자
CN103703565B (zh) 半导体装置
JP6080023B2 (ja) 逆導通型ｉｇｂｔ
US6383836B2 (en) Diode and method for manufacturing the same
US10840238B2 (en) Semiconductor device
US4394674A (en) Insulated gate field effect transistor
KR101444081B1 (ko) 종형 트렌치 ｉｇｂｔ 및 그 제조방법
KR100316040B1 (ko) 반도체 장치 및 그 제조 방법
US7960754B2 (en) Diode having high breakdown voltage and low on-resistance
US11869940B2 (en) Feeder design with high current capability
US12324251B2 (en) Integrated circuit comprising a single photon avalanche diode and corresponding manufacturing method
KR100397882B1 (ko) 전계효과-제어가능반도체소자
CN105957901B (zh) 具有沟槽-肖特基-势垒-肖特基-二极管的半导体装置
US4901120A (en) Structure for fast-recovery bipolar devices
US5243214A (en) Power integrated circuit with latch-up prevention
JPH07297373A (ja) 誘導性負荷要素に対する集積ドライバ回路装置
JPH0766975B2 (ja) 複合型ダイオード装置
US4661838A (en) High voltage semiconductor devices electrically isolated from an integrated circuit substrate
US11121126B2 (en) Silicon controlled rectifier and manufacturing method therefor
US7943960B2 (en) Integrated circuit arrangement including a protective structure
CN212967714U (zh) 具有沟槽自对准P Plus掩蔽埋层的碳化硅SBD器件元胞结构
JPH03276679A (ja) ショットキーバリアダイオード
JPH0474478A (ja) ダイオード
JPH0638471B2 (ja) 半導体装置
JPH01152658A (ja) 半導体集積回路

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

FPAY Annual fee payment
PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

FPAY Annual fee payment
PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

FPAY Annual fee payment

Payment date: 20141021

Year of fee payment: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20151116

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20151116

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000