DE19912490C2 - Halbleitereinrichtung mit einer Schmelzschicht - Google Patents

Halbleitereinrichtung mit einer Schmelzschicht

Info

Publication number
DE19912490C2
DE19912490C2 DE19912490A DE19912490A DE19912490C2 DE 19912490 C2 DE19912490 C2 DE 19912490C2 DE 19912490 A DE19912490 A DE 19912490A DE 19912490 A DE19912490 A DE 19912490A DE 19912490 C2 DE19912490 C2 DE 19912490C2
Authority
DE
Germany
Prior art keywords
layer
melt
melting
pseudo
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE19912490A
Other languages
German (de)
English (en)
Other versions
DE19912490A1 (de
Inventor
Takeshi Iwamoto
Rui Toyota
Kaoru Motonami
Yasuhiro Ido
Masatoshi Kimura
Kakutaro Suda
Kazuhide Kawabe
Hideki Doi
Hiroaki Sekikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE19912490A1 publication Critical patent/DE19912490A1/de
Application granted granted Critical
Publication of DE19912490C2 publication Critical patent/DE19912490C2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Recrystallisation Techniques (AREA)
DE19912490A 1998-06-19 1999-03-19 Halbleitereinrichtung mit einer Schmelzschicht Expired - Lifetime DE19912490C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17312098A JP4390297B2 (ja) 1998-06-19 1998-06-19 半導体装置

Publications (2)

Publication Number Publication Date
DE19912490A1 DE19912490A1 (de) 2000-01-20
DE19912490C2 true DE19912490C2 (de) 2003-10-16

Family

ID=15954519

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19912490A Expired - Lifetime DE19912490C2 (de) 1998-06-19 1999-03-19 Halbleitereinrichtung mit einer Schmelzschicht

Country Status (5)

Country Link
US (1) US6259147B1 (enExample)
JP (1) JP4390297B2 (enExample)
KR (1) KR100334598B1 (enExample)
DE (1) DE19912490C2 (enExample)
TW (1) TW411614B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6562674B1 (en) * 1999-07-06 2003-05-13 Matsushita Electronics Corporation Semiconductor integrated circuit device and method of producing the same
JP3907911B2 (ja) 2000-03-30 2007-04-18 Ｎｅｃエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
DE10026926C2 (de) * 2000-05-30 2002-06-20 Infineon Technologies Ag Halbleiteranordnung mit optischer Fuse
US6784516B1 (en) * 2000-10-06 2004-08-31 International Business Machines Corporation Insulative cap for laser fusing
JP4079600B2 (ja) * 2001-03-06 2008-04-23 株式会社東芝 半導体装置
US6518643B2 (en) * 2001-03-23 2003-02-11 International Business Machines Corporation Tri-layer dielectric fuse cap for laser deletion
JP2003086687A (ja) * 2001-09-13 2003-03-20 Seiko Epson Corp 半導体装置
KR100444722B1 (ko) * 2002-04-08 2004-08-16 아남반도체 주식회사 퓨즈 라인 제조 방법
KR100709434B1 (ko) * 2005-06-27 2007-04-18 주식회사 하이닉스반도체 반도체 소자의 퓨즈 박스
JP5060100B2 (ja) * 2006-10-26 2012-10-31 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
CN119724081B (zh) * 2025-01-15 2025-10-03 闽都创新实验室 一种基于单向截流电流栅调控发光器件驱动方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5589706A (en) * 1995-05-31 1996-12-31 International Business Machines Corp. Fuse link structures through the addition of dummy structures

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263558A (ja) 1994-03-18 1995-10-13 Fujitsu Ltd 半導体装置
JP3256626B2 (ja) * 1994-05-15 2002-02-12 株式会社東芝 半導体装置
TW279229B (en) * 1994-12-29 1996-06-21 Siemens Ag Double density fuse bank for the laser break-link programming of an integrated-circuit
US5636172A (en) * 1995-12-22 1997-06-03 Micron Technology, Inc. Reduced pitch laser redundancy fuse bank structure
JPH09213804A (ja) 1996-01-29 1997-08-15 Mitsubishi Electric Corp ヒューズ層を有する半導体装置
US5851903A (en) * 1996-08-20 1998-12-22 International Business Machine Corporation Method of forming closely pitched polysilicon fuses
US5949323A (en) * 1998-06-30 1999-09-07 Clear Logic, Inc. Non-uniform width configurable fuse structure

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5589706A (en) * 1995-05-31 1996-12-31 International Business Machines Corp. Fuse link structures through the addition of dummy structures

Also Published As

Publication number Publication date
DE19912490A1 (de) 2000-01-20
US6259147B1 (en) 2001-07-10
JP2000012691A (ja) 2000-01-14
KR100334598B1 (ko) 2002-05-02
JP4390297B2 (ja) 2009-12-24
KR20000005616A (ko) 2000-01-25
TW411614B (en) 2000-11-11

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8304 Grant after examination procedure
8364 No opposition during term of opposition
R082 Change of representative

Representative=s name: PRUEFER & PARTNER GBR, DE

R081 Change of applicant/patentee

Owner name: RENESAS ELECTRONICS CORPORATION, KAWASAKI-SHI, JP

Free format text: FORMER OWNER: MITSUBISHI DENKI K.K., TOKYO, JP

Effective date: 20140915

Owner name: RENESAS ELECTRONICS CORPORATION, JP

Free format text: FORMER OWNER: MITSUBISHI DENKI K.K., TOKYO, JP

Effective date: 20140915

R082 Change of representative

Representative=s name: PRUEFER & PARTNER GBR, DE

Effective date: 20140915

Representative=s name: PRUEFER & PARTNER MBB PATENTANWAELTE RECHTSANW, DE

Effective date: 20140915

R081 Change of applicant/patentee

Owner name: RENESAS ELECTRONICS CORPORATION, JP

Free format text: FORMER OWNER: RENESAS ELECTRONICS CORPORATION, KAWASAKI-SHI, KANAGAWA, JP

R082 Change of representative

Representative=s name: PRUEFER & PARTNER MBB PATENTANWAELTE RECHTSANW, DE

R071 Expiry of right