DE1948551A1 - Vorrichtung zum Aufwachsen aus dem fluessigen Zustand - Google Patents

Vorrichtung zum Aufwachsen aus dem fluessigen Zustand

Info

Publication number
DE1948551A1
DE1948551A1 DE19691948551 DE1948551A DE1948551A1 DE 1948551 A1 DE1948551 A1 DE 1948551A1 DE 19691948551 DE19691948551 DE 19691948551 DE 1948551 A DE1948551 A DE 1948551A DE 1948551 A1 DE1948551 A1 DE 1948551A1
Authority
DE
Germany
Prior art keywords
substrate
solution
boat
cylindrical
axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19691948551
Other languages
German (de)
English (en)
Inventor
Hiroyuki Kobayasi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP6674969A external-priority patent/JPS5021216B1/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE1948551A1 publication Critical patent/DE1948551A1/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061—Tipping system, e.g. by rotation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/068—Substrate holders

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE19691948551 1968-09-27 1969-09-25 Vorrichtung zum Aufwachsen aus dem fluessigen Zustand Pending DE1948551A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7090268 1968-09-27
JP6674969A JPS5021216B1 (enrdf_load_stackoverflow) 1969-08-20 1969-08-20

Publications (1)

Publication Number Publication Date
DE1948551A1 true DE1948551A1 (de) 1970-04-23

Family

ID=26407952

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19691948551 Pending DE1948551A1 (de) 1968-09-27 1969-09-25 Vorrichtung zum Aufwachsen aus dem fluessigen Zustand

Country Status (4)

Country Link
DE (1) DE1948551A1 (enrdf_load_stackoverflow)
FR (1) FR2019075A1 (enrdf_load_stackoverflow)
GB (1) GB1248999A (enrdf_load_stackoverflow)
NL (1) NL143433B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2305019A1 (de) * 1972-02-09 1973-08-23 Rca Corp Verfahren und vorrichtung zum epitaktischen aufwachsen von halbleitermaterial aus der schmelze

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53271B1 (enrdf_load_stackoverflow) * 1971-03-05 1978-01-06
CN119465373A (zh) * 2024-11-21 2025-02-18 连城凯克斯科技有限公司 一种单晶炉拉晶装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2305019A1 (de) * 1972-02-09 1973-08-23 Rca Corp Verfahren und vorrichtung zum epitaktischen aufwachsen von halbleitermaterial aus der schmelze

Also Published As

Publication number Publication date
NL143433B (nl) 1974-10-15
NL6914653A (enrdf_load_stackoverflow) 1970-04-01
FR2019075A1 (enrdf_load_stackoverflow) 1970-06-26
GB1248999A (en) 1971-10-06

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Legal Events

Date Code Title Description
SH Request for examination between 03.10.1968 and 22.04.1971
OHW Rejection