DE1932130B2 - Gruen elektrolumineszente halbleiterdiode und verfahren zu deren herstellung - Google Patents

Gruen elektrolumineszente halbleiterdiode und verfahren zu deren herstellung

Info

Publication number
DE1932130B2
DE1932130B2 DE19691932130 DE1932130A DE1932130B2 DE 1932130 B2 DE1932130 B2 DE 1932130B2 DE 19691932130 DE19691932130 DE 19691932130 DE 1932130 A DE1932130 A DE 1932130A DE 1932130 B2 DE1932130 B2 DE 1932130B2
Authority
DE
Germany
Prior art keywords
production
semiconductor diode
electroluminescent semiconductor
green electroluminescent
green
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19691932130
Other languages
German (de)
English (en)
Other versions
DE1932130A1 (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of DE1932130A1 publication Critical patent/DE1932130A1/de
Publication of DE1932130B2 publication Critical patent/DE1932130B2/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/8242—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2909—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3418—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/119—Phosphides of gallium or indium
DE19691932130 1968-06-28 1969-06-25 Gruen elektrolumineszente halbleiterdiode und verfahren zu deren herstellung Withdrawn DE1932130B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US74090368A 1968-06-28 1968-06-28

Publications (2)

Publication Number Publication Date
DE1932130A1 DE1932130A1 (de) 1970-01-02
DE1932130B2 true DE1932130B2 (de) 1971-03-18

Family

ID=24978545

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19691932130 Withdrawn DE1932130B2 (de) 1968-06-28 1969-06-25 Gruen elektrolumineszente halbleiterdiode und verfahren zu deren herstellung

Country Status (11)

Country Link
US (1) US3592704A (OSRAM)
JP (1) JPS4814508B1 (OSRAM)
BE (1) BE734071A (OSRAM)
CH (1) CH494518A (OSRAM)
CS (1) CS162686B2 (OSRAM)
DE (1) DE1932130B2 (OSRAM)
FR (1) FR2011768A1 (OSRAM)
GB (1) GB1279674A (OSRAM)
NL (1) NL149642B (OSRAM)
PL (1) PL71396B1 (OSRAM)
SE (1) SE342965B (OSRAM)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3689330A (en) * 1969-04-18 1972-09-05 Sony Corp Method of making a luminescent diode
BE754437A (fr) * 1969-08-08 1971-01-18 Western Electric Co Dispositif electroluminescent ameliore
BE789732A (fr) * 1971-10-08 1973-02-01 Western Electric Co Laser a cristal de semi-conducteur ayant un intervalle indirectentre bandes d'energie
US3870575A (en) * 1972-03-21 1975-03-11 Sony Corp Fabricating a gallium phosphide device
US3865655A (en) * 1973-09-24 1975-02-11 Rca Corp Method for diffusing impurities into nitride semiconductor crystals
JPS5596629A (en) * 1979-01-17 1980-07-23 Matsushita Electric Ind Co Ltd Method of epitaxially growing in liquid phase

Also Published As

Publication number Publication date
DE1932130A1 (de) 1970-01-02
JPS4814508B1 (OSRAM) 1973-05-08
GB1279674A (en) 1972-06-28
NL149642B (nl) 1976-05-17
SE342965B (OSRAM) 1972-02-21
CS162686B2 (OSRAM) 1975-07-15
BE734071A (OSRAM) 1969-11-17
FR2011768A1 (OSRAM) 1970-03-06
NL6909924A (OSRAM) 1969-12-30
CH494518A (de) 1970-07-31
PL71396B1 (OSRAM) 1974-06-29
US3592704A (en) 1971-07-13

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Legal Events

Date Code Title Description
E77 Valid patent as to the heymanns-index 1977
8339 Ceased/non-payment of the annual fee