CS162686B2 - - Google Patents
Info
- Publication number
- CS162686B2 CS162686B2 CS4585A CS458569A CS162686B2 CS 162686 B2 CS162686 B2 CS 162686B2 CS 4585 A CS4585 A CS 4585A CS 458569 A CS458569 A CS 458569A CS 162686 B2 CS162686 B2 CS 162686B2
- Authority
- CS
- Czechoslovakia
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/8242—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP characterised by the dopants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
-
- H10P95/00—
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- H10P14/2909—
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- H10P14/3418—
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- H10P14/3444—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/107—Melt
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/119—Phosphides of gallium or indium
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US74090368A | 1968-06-28 | 1968-06-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CS162686B2 true CS162686B2 (cs) | 1975-07-15 |
Family
ID=24978545
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CS4585A CS162686B2 (cs) | 1968-06-28 | 1969-06-27 |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US3592704A (cs) |
| JP (1) | JPS4814508B1 (cs) |
| BE (1) | BE734071A (cs) |
| CH (1) | CH494518A (cs) |
| CS (1) | CS162686B2 (cs) |
| DE (1) | DE1932130B2 (cs) |
| FR (1) | FR2011768A1 (cs) |
| GB (1) | GB1279674A (cs) |
| NL (1) | NL149642B (cs) |
| PL (1) | PL71396B1 (cs) |
| SE (1) | SE342965B (cs) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3689330A (en) * | 1969-04-18 | 1972-09-05 | Sony Corp | Method of making a luminescent diode |
| BE754437A (fr) * | 1969-08-08 | 1971-01-18 | Western Electric Co | Dispositif electroluminescent ameliore |
| BE789732A (fr) * | 1971-10-08 | 1973-02-01 | Western Electric Co | Laser a cristal de semi-conducteur ayant un intervalle indirectentre bandes d'energie |
| US3870575A (en) * | 1972-03-21 | 1975-03-11 | Sony Corp | Fabricating a gallium phosphide device |
| US3865655A (en) * | 1973-09-24 | 1975-02-11 | Rca Corp | Method for diffusing impurities into nitride semiconductor crystals |
| JPS5596629A (en) * | 1979-01-17 | 1980-07-23 | Matsushita Electric Ind Co Ltd | Method of epitaxially growing in liquid phase |
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1968
- 1968-06-28 US US740903A patent/US3592704A/en not_active Expired - Lifetime
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1969
- 1969-06-04 BE BE734071D patent/BE734071A/xx not_active IP Right Cessation
- 1969-06-19 SE SE8765/69A patent/SE342965B/xx unknown
- 1969-06-23 FR FR6920980A patent/FR2011768A1/fr not_active Withdrawn
- 1969-06-24 PL PL1969134363A patent/PL71396B1/pl unknown
- 1969-06-25 GB GB32034/69A patent/GB1279674A/en not_active Expired
- 1969-06-25 DE DE19691932130 patent/DE1932130B2/de not_active Withdrawn
- 1969-06-27 CS CS4585A patent/CS162686B2/cs unknown
- 1969-06-27 NL NL696909924A patent/NL149642B/xx not_active IP Right Cessation
- 1969-06-27 CH CH990269A patent/CH494518A/de not_active IP Right Cessation
- 1969-06-27 JP JP5045069A patent/JPS4814508B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE1932130A1 (de) | 1970-01-02 |
| NL149642B (nl) | 1976-05-17 |
| PL71396B1 (cs) | 1974-06-29 |
| GB1279674A (en) | 1972-06-28 |
| NL6909924A (cs) | 1969-12-30 |
| FR2011768A1 (cs) | 1970-03-06 |
| DE1932130B2 (de) | 1971-03-18 |
| SE342965B (cs) | 1972-02-21 |
| CH494518A (de) | 1970-07-31 |
| JPS4814508B1 (cs) | 1973-05-08 |
| US3592704A (en) | 1971-07-13 |
| BE734071A (cs) | 1969-11-17 |