BE789732A - Laser a cristal de semi-conducteur ayant un intervalle indirectentre bandes d'energie - Google Patents

Laser a cristal de semi-conducteur ayant un intervalle indirectentre bandes d'energie

Info

Publication number
BE789732A
BE789732A BE789732DA BE789732A BE 789732 A BE789732 A BE 789732A BE 789732D A BE789732D A BE 789732DA BE 789732 A BE789732 A BE 789732A
Authority
BE
Belgium
Prior art keywords
indirectent
energy
semiconductor crystal
crystal laser
bands
Prior art date
Application number
Other languages
English (en)
Inventor
R F Leheny
R A Logan
R E Nahory
K L Shaklee
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE789732A publication Critical patent/BE789732A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)
  • Semiconductor Lasers (AREA)
BE789732D 1971-10-08 Laser a cristal de semi-conducteur ayant un intervalle indirectentre bandes d'energie BE789732A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US18763171A 1971-10-08 1971-10-08

Publications (1)

Publication Number Publication Date
BE789732A true BE789732A (fr) 1973-02-01

Family

ID=22689792

Family Applications (1)

Application Number Title Priority Date Filing Date
BE789732D BE789732A (fr) 1971-10-08 Laser a cristal de semi-conducteur ayant un intervalle indirectentre bandes d'energie

Country Status (10)

Country Link
US (1) US3761837A (fr)
AU (1) AU4732072A (fr)
BE (1) BE789732A (fr)
CA (1) CA968444A (fr)
DE (1) DE2248712A1 (fr)
FR (1) FR2156166B1 (fr)
GB (1) GB1379950A (fr)
IT (1) IT975199B (fr)
NL (1) NL7213570A (fr)
SE (1) SE380404B (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3851268A (en) * 1973-05-11 1974-11-26 Bell Telephone Labor Inc Mini-laser
US3976872A (en) * 1973-11-29 1976-08-24 Honeywell Inc. Gallium phosphide photodetector having an as-grown surface and producing an output from radiation having energies of 2.2 eV to 3.8 eV
US3978360A (en) * 1974-12-27 1976-08-31 Nasa III-V photocathode with nitrogen doping for increased quantum efficiency
US4001719A (en) * 1975-08-13 1977-01-04 Bell Telephone Laboratories, Incorporated Fabrication of a self-aligned mirror on a solid-state laser for controlling filamentation
US4162460A (en) * 1976-05-26 1979-07-24 Agency Of Industrial Science & Technology Optical circuit element
NL8303168A (nl) * 1983-09-14 1985-04-01 Philips Nv Inrichting voor het uitlezen van balken gecodeerde informatie.
US7486437B2 (en) * 2003-11-10 2009-02-03 Ramot At Tel Aviv University Ltd. Apparatus and method for optical amplification in indirect-gap semiconductors

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE25632E (en) * 1960-01-11 1964-08-18 Optical maser
US3592704A (en) * 1968-06-28 1971-07-13 Bell Telephone Labor Inc Electroluminescent device

Also Published As

Publication number Publication date
CA968444A (en) 1975-05-27
GB1379950A (en) 1975-01-08
AU4732072A (en) 1974-04-11
IT975199B (it) 1974-07-20
FR2156166B1 (fr) 1977-04-01
US3761837A (en) 1973-09-25
NL7213570A (fr) 1973-04-10
FR2156166A1 (fr) 1973-05-25
SE380404B (sv) 1975-11-03
DE2248712A1 (de) 1973-04-12

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