DE1928787A1 - Halbleiterelement - Google Patents
HalbleiterelementInfo
- Publication number
- DE1928787A1 DE1928787A1 DE19691928787 DE1928787A DE1928787A1 DE 1928787 A1 DE1928787 A1 DE 1928787A1 DE 19691928787 DE19691928787 DE 19691928787 DE 1928787 A DE1928787 A DE 1928787A DE 1928787 A1 DE1928787 A1 DE 1928787A1
- Authority
- DE
- Germany
- Prior art keywords
- zone
- semiconductor wafer
- semiconductor element
- recess
- conical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 33
- 230000007704 transition Effects 0.000 claims description 7
- 230000015556 catabolic process Effects 0.000 claims description 2
- 230000005684 electric field Effects 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH1055368A CH485324A (de) | 1968-07-15 | 1968-07-15 | Halbleiterelement |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1928787A1 true DE1928787A1 (de) | 1970-11-12 |
Family
ID=4364431
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19691928787 Pending DE1928787A1 (de) | 1968-07-15 | 1969-06-06 | Halbleiterelement |
| DE6922591U Expired DE6922591U (de) | 1968-07-15 | 1969-06-06 | Halbleiterelement |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE6922591U Expired DE6922591U (de) | 1968-07-15 | 1969-06-06 | Halbleiterelement |
Country Status (7)
| Country | Link |
|---|---|
| AT (1) | AT278907B (xx) |
| CH (1) | CH485324A (xx) |
| DE (2) | DE1928787A1 (xx) |
| FR (1) | FR2012977A7 (xx) |
| GB (1) | GB1220315A (xx) |
| NL (1) | NL6812691A (xx) |
| SE (1) | SE354381B (xx) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3518863A1 (de) * | 1984-05-25 | 1985-11-28 | Mitsubishi Denki K.K., Tokio/Tokyo | Halbleitertablette mit verringerter oberflaechenfeldintensitaet |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10326578B4 (de) | 2003-06-12 | 2006-01-19 | Siltronic Ag | Verfahren zur Herstellung einer SOI-Scheibe |
-
1968
- 1968-07-15 CH CH1055368A patent/CH485324A/de not_active IP Right Cessation
- 1968-08-08 AT AT777368A patent/AT278907B/de not_active IP Right Cessation
- 1968-09-05 NL NL6812691A patent/NL6812691A/xx unknown
-
1969
- 1969-06-06 DE DE19691928787 patent/DE1928787A1/de active Pending
- 1969-06-06 DE DE6922591U patent/DE6922591U/de not_active Expired
- 1969-07-11 FR FR6923762A patent/FR2012977A7/fr not_active Expired
- 1969-07-14 SE SE09954/69A patent/SE354381B/xx unknown
- 1969-07-14 GB GB35239/69A patent/GB1220315A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3518863A1 (de) * | 1984-05-25 | 1985-11-28 | Mitsubishi Denki K.K., Tokio/Tokyo | Halbleitertablette mit verringerter oberflaechenfeldintensitaet |
Also Published As
| Publication number | Publication date |
|---|---|
| DE6922591U (de) | 1971-03-18 |
| FR2012977A7 (xx) | 1970-03-27 |
| GB1220315A (en) | 1971-01-27 |
| CH485324A (de) | 1970-01-31 |
| SE354381B (xx) | 1973-03-05 |
| NL6812691A (xx) | 1970-01-19 |
| AT278907B (de) | 1970-02-25 |
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