DE1913565C3 - Verfahren zur Herstellung eines Kristalls einer halbleitenden Am Bv -Verbindung - Google Patents

Verfahren zur Herstellung eines Kristalls einer halbleitenden Am Bv -Verbindung

Info

Publication number
DE1913565C3
DE1913565C3 DE1913565A DE1913565A DE1913565C3 DE 1913565 C3 DE1913565 C3 DE 1913565C3 DE 1913565 A DE1913565 A DE 1913565A DE 1913565 A DE1913565 A DE 1913565A DE 1913565 C3 DE1913565 C3 DE 1913565C3
Authority
DE
Germany
Prior art keywords
melt
compound
boat
crucible
boron oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1913565A
Other languages
German (de)
English (en)
Other versions
DE1913565B2 (de
DE1913565A1 (de
Inventor
Emile Samson-Caen Deyris (Frankreich)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1913565A1 publication Critical patent/DE1913565A1/de
Publication of DE1913565B2 publication Critical patent/DE1913565B2/de
Application granted granted Critical
Publication of DE1913565C3 publication Critical patent/DE1913565C3/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00—Alloys or metallic compositions
    • Y10S420/903—Semiconductive

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE1913565A 1968-03-22 1969-03-18 Verfahren zur Herstellung eines Kristalls einer halbleitenden Am Bv -Verbindung Expired DE1913565C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR145047 1968-03-22

Publications (3)

Publication Number Publication Date
DE1913565A1 DE1913565A1 (de) 1970-09-03
DE1913565B2 DE1913565B2 (de) 1978-08-03
DE1913565C3 true DE1913565C3 (de) 1979-03-29

Family

ID=8647915

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1913565A Expired DE1913565C3 (de) 1968-03-22 1969-03-18 Verfahren zur Herstellung eines Kristalls einer halbleitenden Am Bv -Verbindung

Country Status (9)

Country Link
US (1) US3649193A (enExample)
AT (1) AT299127B (enExample)
BE (1) BE730207A (enExample)
CA (1) CA918042A (enExample)
CH (1) CH516476A (enExample)
DE (1) DE1913565C3 (enExample)
FR (1) FR1569785A (enExample)
GB (1) GB1261046A (enExample)
NL (1) NL6904109A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3902860A (en) * 1972-09-28 1975-09-02 Sumitomo Electric Industries Thermal treatment of semiconducting compounds having one or more volatile components
US4083748A (en) * 1975-10-30 1978-04-11 Western Electric Company, Inc. Method of forming and growing a single crystal of a semiconductor compound
US4721539A (en) * 1986-07-15 1988-01-26 The United States Of America As Represented By The United States Department Of Energy Large single crystal quaternary alloys of IB-IIIA-SE2 and methods of synthesizing the same
US4879397A (en) * 1987-11-03 1989-11-07 Cornell Research Foundation, Inc. Novel gallium arsenide precursor and low temperature method of preparing gallium arsenide therefrom
US4980490A (en) * 1987-11-03 1990-12-25 Cornell Research Foundation, Inc. [R(Cl)GaAs(SiR'3)2 ]n
US4946544A (en) * 1989-02-27 1990-08-07 At&T Bell Laboratories Crystal growth method
US5064497A (en) * 1990-03-09 1991-11-12 At&T Bell Laboratories Crystal growth method and apparatus
US5098867A (en) * 1990-11-13 1992-03-24 Samsung Electronics Co., Ltd. Heat treatment for compound semiconductor wafer
US5284631A (en) * 1992-01-03 1994-02-08 Nkk Corporation Crucible for manufacturing single crystals
DE102011117411A1 (de) * 2011-11-02 2013-05-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Analyse des Erstarrungsverhaltens einer Siliziumsäule

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3353912A (en) * 1962-03-20 1967-11-21 Ibm Preparation of high-purity materials
US3305313A (en) * 1963-12-18 1967-02-21 Philco Ford Corp Method of producing gallium phosphide in crystalline form

Also Published As

Publication number Publication date
DE1913565B2 (de) 1978-08-03
FR1569785A (enExample) 1969-06-06
CA918042A (en) 1973-01-02
GB1261046A (en) 1972-01-19
US3649193A (en) 1972-03-14
BE730207A (enExample) 1969-09-22
AT299127B (de) 1972-06-12
NL6904109A (enExample) 1969-09-24
DE1913565A1 (de) 1970-09-03
CH516476A (de) 1971-12-15

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee