BE730207A - - Google Patents
Info
- Publication number
- BE730207A BE730207A BE730207DA BE730207A BE 730207 A BE730207 A BE 730207A BE 730207D A BE730207D A BE 730207DA BE 730207 A BE730207 A BE 730207A
- Authority
- BE
- Belgium
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
- C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S420/00—Alloys or metallic compositions
- Y10S420/903—Semiconductive
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR145047 | 1968-03-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE730207A true BE730207A (xx) | 1969-09-22 |
Family
ID=8647915
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE730207D BE730207A (xx) | 1968-03-22 | 1969-03-20 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3649193A (xx) |
| AT (1) | AT299127B (xx) |
| BE (1) | BE730207A (xx) |
| CA (1) | CA918042A (xx) |
| CH (1) | CH516476A (xx) |
| DE (1) | DE1913565C3 (xx) |
| FR (1) | FR1569785A (xx) |
| GB (1) | GB1261046A (xx) |
| NL (1) | NL6904109A (xx) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3902860A (en) * | 1972-09-28 | 1975-09-02 | Sumitomo Electric Industries | Thermal treatment of semiconducting compounds having one or more volatile components |
| US4083748A (en) * | 1975-10-30 | 1978-04-11 | Western Electric Company, Inc. | Method of forming and growing a single crystal of a semiconductor compound |
| US4721539A (en) * | 1986-07-15 | 1988-01-26 | The United States Of America As Represented By The United States Department Of Energy | Large single crystal quaternary alloys of IB-IIIA-SE2 and methods of synthesizing the same |
| US4879397A (en) * | 1987-11-03 | 1989-11-07 | Cornell Research Foundation, Inc. | Novel gallium arsenide precursor and low temperature method of preparing gallium arsenide therefrom |
| US4980490A (en) * | 1987-11-03 | 1990-12-25 | Cornell Research Foundation, Inc. | [R(Cl)GaAs(SiR'3)2 ]n |
| US4946544A (en) * | 1989-02-27 | 1990-08-07 | At&T Bell Laboratories | Crystal growth method |
| US5064497A (en) * | 1990-03-09 | 1991-11-12 | At&T Bell Laboratories | Crystal growth method and apparatus |
| US5098867A (en) * | 1990-11-13 | 1992-03-24 | Samsung Electronics Co., Ltd. | Heat treatment for compound semiconductor wafer |
| US5284631A (en) * | 1992-01-03 | 1994-02-08 | Nkk Corporation | Crucible for manufacturing single crystals |
| DE102011117411A1 (de) * | 2011-11-02 | 2013-05-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Analyse des Erstarrungsverhaltens einer Siliziumsäule |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3353912A (en) * | 1962-03-20 | 1967-11-21 | Ibm | Preparation of high-purity materials |
| US3305313A (en) * | 1963-12-18 | 1967-02-21 | Philco Ford Corp | Method of producing gallium phosphide in crystalline form |
-
1968
- 1968-03-22 FR FR145047A patent/FR1569785A/fr not_active Expired
-
1969
- 1969-03-18 NL NL6904109A patent/NL6904109A/xx unknown
- 1969-03-18 DE DE1913565A patent/DE1913565C3/de not_active Expired
- 1969-03-19 CA CA046118A patent/CA918042A/en not_active Expired
- 1969-03-19 GB GB04384/69A patent/GB1261046A/en not_active Expired
- 1969-03-19 AT AT271869A patent/AT299127B/de not_active IP Right Cessation
- 1969-03-19 CH CH413769A patent/CH516476A/de not_active IP Right Cessation
- 1969-03-20 BE BE730207D patent/BE730207A/xx unknown
- 1969-03-21 US US809300A patent/US3649193A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| FR1569785A (xx) | 1969-06-06 |
| CH516476A (de) | 1971-12-15 |
| CA918042A (en) | 1973-01-02 |
| AT299127B (de) | 1972-06-12 |
| DE1913565B2 (de) | 1978-08-03 |
| GB1261046A (en) | 1972-01-19 |
| DE1913565C3 (de) | 1979-03-29 |
| NL6904109A (xx) | 1969-09-24 |
| DE1913565A1 (de) | 1970-09-03 |
| US3649193A (en) | 1972-03-14 |