DE1905415A1 - Verfahren zum Dotieren von Silicium- oder Germaniumkristallen mit Antimon und/oder Wismut - Google Patents
Verfahren zum Dotieren von Silicium- oder Germaniumkristallen mit Antimon und/oder WismutInfo
- Publication number
- DE1905415A1 DE1905415A1 DE19691905415 DE1905415A DE1905415A1 DE 1905415 A1 DE1905415 A1 DE 1905415A1 DE 19691905415 DE19691905415 DE 19691905415 DE 1905415 A DE1905415 A DE 1905415A DE 1905415 A1 DE1905415 A1 DE 1905415A1
- Authority
- DE
- Germany
- Prior art keywords
- doping
- compound
- antimony
- bismuth
- crystals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims description 18
- 238000000034 method Methods 0.000 title claims description 11
- 229910052710 silicon Inorganic materials 0.000 title claims description 10
- 229910052787 antimony Inorganic materials 0.000 title claims description 9
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 title claims description 9
- 229910052732 germanium Inorganic materials 0.000 title claims description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims description 9
- 239000010703 silicon Substances 0.000 title claims description 9
- 229910052797 bismuth Inorganic materials 0.000 title claims description 6
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 title claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 23
- 150000001875 compounds Chemical class 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 11
- 239000012159 carrier gas Substances 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 150000001463 antimony compounds Chemical class 0.000 claims description 2
- 125000003118 aryl group Chemical group 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- MOWNZPNSYMGTMD-UHFFFAOYSA-N oxidoboron Chemical class O=[B] MOWNZPNSYMGTMD-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229910001392 phosphorus oxide Inorganic materials 0.000 description 1
- FAIAAWCVCHQXDN-UHFFFAOYSA-N phosphorus trichloride Chemical compound ClP(Cl)Cl FAIAAWCVCHQXDN-UHFFFAOYSA-N 0.000 description 1
- LFGREXWGYUGZLY-UHFFFAOYSA-N phosphoryl Chemical class [P]=O LFGREXWGYUGZLY-UHFFFAOYSA-N 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 239000006200 vaporizer Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19691905415 DE1905415A1 (de) | 1969-02-04 | 1969-02-04 | Verfahren zum Dotieren von Silicium- oder Germaniumkristallen mit Antimon und/oder Wismut |
| NL6916174A NL6916174A (fr) | 1969-02-04 | 1969-10-27 | |
| FR7003532A FR2033290A1 (fr) | 1969-02-04 | 1970-02-02 | |
| CH141370A CH527641A (de) | 1969-02-04 | 1970-02-02 | Verfahren zum Dotieren von Silicium- oder Germaniumkristallen mit Antimon und/oder Wismut |
| AT93770A AT307507B (de) | 1969-02-04 | 1970-02-02 | Verfahren zum Dotieren von Silizium- oder Germaniumkristallen mit Antimon und bzw. oder Wismut |
| GB499370A GB1253765A (en) | 1969-02-04 | 1970-02-03 | Improvements in or relating to the doping of silicon or germanium crystals with antimony and/or bismuth |
| JP934470A JPS4824666B1 (fr) | 1969-02-04 | 1970-02-04 | |
| SE143270A SE354791B (fr) | 1969-02-04 | 1970-02-04 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19691905415 DE1905415A1 (de) | 1969-02-04 | 1969-02-04 | Verfahren zum Dotieren von Silicium- oder Germaniumkristallen mit Antimon und/oder Wismut |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1905415A1 true DE1905415A1 (de) | 1970-08-06 |
Family
ID=5724275
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19691905415 Pending DE1905415A1 (de) | 1969-02-04 | 1969-02-04 | Verfahren zum Dotieren von Silicium- oder Germaniumkristallen mit Antimon und/oder Wismut |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS4824666B1 (fr) |
| AT (1) | AT307507B (fr) |
| CH (1) | CH527641A (fr) |
| DE (1) | DE1905415A1 (fr) |
| FR (1) | FR2033290A1 (fr) |
| GB (1) | GB1253765A (fr) |
| NL (1) | NL6916174A (fr) |
| SE (1) | SE354791B (fr) |
-
1969
- 1969-02-04 DE DE19691905415 patent/DE1905415A1/de active Pending
- 1969-10-27 NL NL6916174A patent/NL6916174A/xx unknown
-
1970
- 1970-02-02 CH CH141370A patent/CH527641A/de unknown
- 1970-02-02 FR FR7003532A patent/FR2033290A1/fr not_active Withdrawn
- 1970-02-02 AT AT93770A patent/AT307507B/de not_active IP Right Cessation
- 1970-02-03 GB GB499370A patent/GB1253765A/en not_active Expired
- 1970-02-04 SE SE143270A patent/SE354791B/xx unknown
- 1970-02-04 JP JP934470A patent/JPS4824666B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CH527641A (de) | 1972-09-15 |
| AT307507B (de) | 1973-05-25 |
| SE354791B (fr) | 1973-03-26 |
| JPS4824666B1 (fr) | 1973-07-23 |
| FR2033290A1 (fr) | 1970-12-04 |
| GB1253765A (en) | 1971-11-17 |
| NL6916174A (fr) | 1970-08-06 |
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