AT307507B - Verfahren zum Dotieren von Silizium- oder Germaniumkristallen mit Antimon und bzw. oder Wismut - Google Patents
Verfahren zum Dotieren von Silizium- oder Germaniumkristallen mit Antimon und bzw. oder WismutInfo
- Publication number
- AT307507B AT307507B AT93770A AT93770A AT307507B AT 307507 B AT307507 B AT 307507B AT 93770 A AT93770 A AT 93770A AT 93770 A AT93770 A AT 93770A AT 307507 B AT307507 B AT 307507B
- Authority
- AT
- Austria
- Prior art keywords
- bismuth
- antimony
- doping silicon
- germanium crystals
- germanium
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
- H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19691905415 DE1905415A1 (de) | 1969-02-04 | 1969-02-04 | Verfahren zum Dotieren von Silicium- oder Germaniumkristallen mit Antimon und/oder Wismut |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AT307507B true AT307507B (de) | 1973-05-25 |
Family
ID=5724275
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT93770A AT307507B (de) | 1969-02-04 | 1970-02-02 | Verfahren zum Dotieren von Silizium- oder Germaniumkristallen mit Antimon und bzw. oder Wismut |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS4824666B1 (de) |
| AT (1) | AT307507B (de) |
| CH (1) | CH527641A (de) |
| DE (1) | DE1905415A1 (de) |
| FR (1) | FR2033290A1 (de) |
| GB (1) | GB1253765A (de) |
| NL (1) | NL6916174A (de) |
| SE (1) | SE354791B (de) |
-
1969
- 1969-02-04 DE DE19691905415 patent/DE1905415A1/de active Pending
- 1969-10-27 NL NL6916174A patent/NL6916174A/xx unknown
-
1970
- 1970-02-02 CH CH141370A patent/CH527641A/de unknown
- 1970-02-02 FR FR7003532A patent/FR2033290A1/fr not_active Withdrawn
- 1970-02-02 AT AT93770A patent/AT307507B/de not_active IP Right Cessation
- 1970-02-03 GB GB4993/70A patent/GB1253765A/en not_active Expired
- 1970-02-04 JP JP45009344A patent/JPS4824666B1/ja active Pending
- 1970-02-04 SE SE01432/70A patent/SE354791B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4824666B1 (de) | 1973-07-23 |
| CH527641A (de) | 1972-09-15 |
| SE354791B (de) | 1973-03-26 |
| NL6916174A (de) | 1970-08-06 |
| FR2033290A1 (de) | 1970-12-04 |
| DE1905415A1 (de) | 1970-08-06 |
| GB1253765A (en) | 1971-11-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ELJ | Ceased due to non-payment of the annual fee |