DE1904505A1 - Integrierte Halbleiterschaltung - Google Patents
Integrierte HalbleiterschaltungInfo
- Publication number
- DE1904505A1 DE1904505A1 DE19691904505 DE1904505A DE1904505A1 DE 1904505 A1 DE1904505 A1 DE 1904505A1 DE 19691904505 DE19691904505 DE 19691904505 DE 1904505 A DE1904505 A DE 1904505A DE 1904505 A1 DE1904505 A1 DE 1904505A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- zone
- base
- junction
- circuit according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 22
- 238000009413 insulation Methods 0.000 claims description 22
- 230000005669 field effect Effects 0.000 claims description 21
- 238000002955 isolation Methods 0.000 claims description 14
- 230000007704 transition Effects 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 5
- 239000002800 charge carrier Substances 0.000 claims description 4
- 244000278792 Calathea allouia Species 0.000 claims 1
- 235000007487 Calathea allouia Nutrition 0.000 claims 1
- 244000269722 Thea sinensis Species 0.000 claims 1
- 238000005513 bias potential Methods 0.000 claims 1
- 230000005284 excitation Effects 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 26
- 238000004519 manufacturing process Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 15
- 150000002500 ions Chemical class 0.000 description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000010292 electrical insulation Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/765—Making of isolation regions between components by field effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US70316568A | 1968-02-05 | 1968-02-05 | |
| US78634568A | 1968-12-23 | 1968-12-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1904505A1 true DE1904505A1 (de) | 1969-11-06 |
Family
ID=27107087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19691904505 Pending DE1904505A1 (de) | 1968-02-05 | 1969-01-30 | Integrierte Halbleiterschaltung |
Country Status (7)
| Country | Link |
|---|---|
| BE (1) | BE727540A (en)) |
| CH (1) | CH502698A (en)) |
| DE (1) | DE1904505A1 (en)) |
| FR (1) | FR2001361A1 (en)) |
| GB (1) | GB1262501A (en)) |
| IL (1) | IL31526A (en)) |
| NL (1) | NL6901820A (en)) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3125732B1 (fr) | 2021-07-28 | 2023-06-30 | Matair | Dispositif de transfert de flux de soudure d’un module d’étuvage accéléré vers un module d’étuvage et de conservation |
-
1969
- 1969-01-28 BE BE727540D patent/BE727540A/xx unknown
- 1969-01-29 GB GB4859/69A patent/GB1262501A/en not_active Expired
- 1969-01-30 DE DE19691904505 patent/DE1904505A1/de active Pending
- 1969-01-31 IL IL31526A patent/IL31526A/xx unknown
- 1969-02-04 CH CH168369A patent/CH502698A/de not_active IP Right Cessation
- 1969-02-05 NL NL6901820A patent/NL6901820A/xx unknown
- 1969-02-05 FR FR6902555A patent/FR2001361A1/fr not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| NL6901820A (en)) | 1969-08-07 |
| CH502698A (de) | 1971-01-31 |
| GB1262501A (en) | 1972-02-02 |
| IL31526A (en) | 1971-11-29 |
| BE727540A (en)) | 1969-07-01 |
| FR2001361A1 (en)) | 1969-09-26 |
| IL31526A0 (en) | 1969-03-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3853778T2 (de) | Verfahren zur Herstellung eines Halbleiterbauelements. | |
| DE3105118C2 (de) | Verfahren zur Herstellung einer integrierten Schaltung mit komplementären bipolaren Transistoren und komplementären Isolierschicht-Gate-Feldeffekttransistoren auf einem gemeinsamen Substrat | |
| DE4223272C2 (de) | Halbleitervorrichtung mit einer Wannenstruktur und Verfahren zu deren Herstellung | |
| DE102010016455B4 (de) | Halbleiterbauelement, Herstellungsverfahren für ein Halbleiterbauelement, sowie integrierte Leistungsschaltung | |
| DE1944793C3 (de) | Verfahren zur Herstellung einer integrierten Halbleiteranordnung | |
| DE102018216855A1 (de) | Siliziumcarbid-Halbleitervorrichtung und Verfahren zum Herstellen einer Siliziumcarbid-Halbleitervorrichtung | |
| DE2612667A1 (de) | Verfahren zur herstellung dielektrisch isolierter halbleiterbereiche | |
| DE2655400A1 (de) | Halbleitervorrichtung und verfahren zu ihrer herstellung | |
| DE2441432B2 (de) | Verfahren zur Herstellung eines VMOS-Transistors | |
| DE102015120417B4 (de) | Verfahren zur Herstellung einer vertikal integrierten Halbleitervorrichtung | |
| DE2542153A1 (de) | Halbleiterbaustein und verfahren zur herstellung desselben | |
| DE3806164C2 (en)) | ||
| DE2328090A1 (de) | Halbleiterkondensator mit grosser kapazitaet und verfahren zu seiner herstellung | |
| DE19654280A1 (de) | Halbleitereinrichtung und Verfahren zu deren Herstellung | |
| DE102014109643B4 (de) | Bipolartransistor und verfahren zum herstellen eines bipolartransistors | |
| DE3235641C2 (en)) | ||
| DE1903870A1 (de) | Verfahren zum Herstellen monolithischer Halbleiteranordnungen | |
| DE3109074A1 (de) | Halbleitervorrichtung und verfahren zu ihrer herstellung | |
| DE1514855B2 (de) | Halbleitervorrichtung | |
| DE1539090B1 (de) | Integrierte Halbleiteranordnung und Verfahren zu ihrer Herstellung | |
| DE1764570B2 (de) | Verfahren zur Herstellung einer Halbleitervorrichtung mit zueinander komplementären NPN- und PNP-Transistoren | |
| DE60133707T2 (de) | Durchbruchsdiode und verfahren zur herstellung | |
| DE2141695B2 (de) | Verfahren zum herstellen eines monolithischen halbleiterbauelementes | |
| EP0704894A2 (de) | Verfahren zur Erzeugung eines niederohmigen Kontaktes zwischen einer Metallisierungsschicht und einem Halbleitermaterial | |
| DE2507038C3 (de) | Inverser Planartransistor und Verfahren zu seiner Herstellung |