DE1814029C3 - Verfahren zur Erzeugung einkristalliner und polykristalliner Halbleiterbereiche auf einem inkristallinen Halbleitersubstrat für die Herstellung von Halbleiterbauelementen - Google Patents

Verfahren zur Erzeugung einkristalliner und polykristalliner Halbleiterbereiche auf einem inkristallinen Halbleitersubstrat für die Herstellung von Halbleiterbauelementen

Info

Publication number
DE1814029C3
DE1814029C3 DE1814029A DE1814029A DE1814029C3 DE 1814029 C3 DE1814029 C3 DE 1814029C3 DE 1814029 A DE1814029 A DE 1814029A DE 1814029 A DE1814029 A DE 1814029A DE 1814029 C3 DE1814029 C3 DE 1814029C3
Authority
DE
Germany
Prior art keywords
layer
semiconductor
semiconductor substrate
substrate
monocrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1814029A
Other languages
German (de)
English (en)
Other versions
DE1814029A1 (de
DE1814029B2 (de
Inventor
Isamu Yokohama Kobayashi (Japan)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE1814029A1 publication Critical patent/DE1814029A1/de
Publication of DE1814029B2 publication Critical patent/DE1814029B2/de
Application granted granted Critical
Publication of DE1814029C3 publication Critical patent/DE1814029C3/de
Expired legal-status Critical Current

Links

Classifications

    • H10P14/2905—
    • H10P14/271—
    • H10P14/3411—
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/10—Lift-off masking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/969—Simultaneous formation of monocrystalline and polycrystalline regions
DE1814029A 1967-12-12 1968-12-11 Verfahren zur Erzeugung einkristalliner und polykristalliner Halbleiterbereiche auf einem inkristallinen Halbleitersubstrat für die Herstellung von Halbleiterbauelementen Expired DE1814029C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7996167 1967-12-12

Publications (3)

Publication Number Publication Date
DE1814029A1 DE1814029A1 (de) 1969-08-14
DE1814029B2 DE1814029B2 (de) 1978-02-09
DE1814029C3 true DE1814029C3 (de) 1979-08-23

Family

ID=13704886

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1814029A Expired DE1814029C3 (de) 1967-12-12 1968-12-11 Verfahren zur Erzeugung einkristalliner und polykristalliner Halbleiterbereiche auf einem inkristallinen Halbleitersubstrat für die Herstellung von Halbleiterbauelementen

Country Status (10)

Country Link
US (1) US3692574A (cg-RX-API-DMAC10.html)
AT (1) AT283448B (cg-RX-API-DMAC10.html)
BE (1) BE725244A (cg-RX-API-DMAC10.html)
CH (1) CH486774A (cg-RX-API-DMAC10.html)
DE (1) DE1814029C3 (cg-RX-API-DMAC10.html)
FR (1) FR1593881A (cg-RX-API-DMAC10.html)
GB (1) GB1246294A (cg-RX-API-DMAC10.html)
NL (1) NL140101B (cg-RX-API-DMAC10.html)
NO (1) NO123439B (cg-RX-API-DMAC10.html)
SE (1) SE354382B (cg-RX-API-DMAC10.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4396933A (en) * 1971-06-18 1983-08-02 International Business Machines Corporation Dielectrically isolated semiconductor devices
US3928092A (en) * 1974-08-28 1975-12-23 Bell Telephone Labor Inc Simultaneous molecular beam deposition of monocrystalline and polycrystalline III(a)-V(a) compounds to produce semiconductor devices
US4022928A (en) * 1975-05-22 1977-05-10 Piwcyzk Bernhard P Vacuum deposition methods and masking structure
GB1520925A (en) * 1975-10-06 1978-08-09 Mullard Ltd Semiconductor device manufacture
DE2967388D1 (en) * 1978-09-20 1985-03-28 Fujitsu Ltd Semiconductor memory device and process for fabricating the device
FR2525389A1 (fr) * 1982-04-14 1983-10-21 Commissariat Energie Atomique Procede de positionnement d'une ligne d'interconnexion sur un trou de contact electrique d'un circuit integre
US4477308A (en) * 1982-09-30 1984-10-16 At&T Bell Laboratories Heteroepitaxy of multiconstituent material by means of a _template layer
GB2228617A (en) * 1989-02-27 1990-08-29 Philips Electronic Associated A method of manufacturing a semiconductor device having a mesa structure
US5256594A (en) * 1989-06-16 1993-10-26 Intel Corporation Masking technique for depositing gallium arsenide on silicon
KR100186886B1 (ko) * 1993-05-26 1999-04-15 야마자끼 승페이 반도체장치 제작방법
KR100355938B1 (ko) * 1993-05-26 2002-12-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치제작방법
US6090646A (en) 1993-05-26 2000-07-18 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device

Also Published As

Publication number Publication date
FR1593881A (cg-RX-API-DMAC10.html) 1970-06-01
NO123439B (cg-RX-API-DMAC10.html) 1971-11-15
US3692574A (en) 1972-09-19
SE354382B (cg-RX-API-DMAC10.html) 1973-03-05
AT283448B (de) 1970-08-10
DE1814029A1 (de) 1969-08-14
DE1814029B2 (de) 1978-02-09
CH486774A (de) 1970-02-28
NL140101B (nl) 1973-10-15
GB1246294A (en) 1971-09-15
NL6817602A (cg-RX-API-DMAC10.html) 1969-06-16
BE725244A (cg-RX-API-DMAC10.html) 1969-05-16

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee