DE1812819B2 - Verfahren zum partiellen aetzen einer oxid oder nitrid duennschicht - Google Patents
Verfahren zum partiellen aetzen einer oxid oder nitrid duennschichtInfo
- Publication number
- DE1812819B2 DE1812819B2 DE19681812819 DE1812819A DE1812819B2 DE 1812819 B2 DE1812819 B2 DE 1812819B2 DE 19681812819 DE19681812819 DE 19681812819 DE 1812819 A DE1812819 A DE 1812819A DE 1812819 B2 DE1812819 B2 DE 1812819B2
- Authority
- DE
- Germany
- Prior art keywords
- oxide
- thin film
- nitride thin
- partial etching
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Formation Of Insulating Films (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US68909067A | 1967-12-08 | 1967-12-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1812819A1 DE1812819A1 (de) | 1969-08-14 |
| DE1812819B2 true DE1812819B2 (de) | 1971-08-19 |
Family
ID=24767002
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19681812819 Withdrawn DE1812819B2 (de) | 1967-12-08 | 1968-12-05 | Verfahren zum partiellen aetzen einer oxid oder nitrid duennschicht |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3585091A (https=) |
| JP (1) | JPS5026907B1 (https=) |
| BE (1) | BE725077A (https=) |
| DE (1) | DE1812819B2 (https=) |
| FR (1) | FR1596758A (https=) |
| GB (1) | GB1254118A (https=) |
| NL (2) | NL6817534A (https=) |
| SE (1) | SE348234B (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4144066A (en) * | 1977-11-30 | 1979-03-13 | Ppg Industries, Inc. | Electron bombardment method for making stained glass photomasks |
| US4619894A (en) * | 1985-04-12 | 1986-10-28 | Massachusetts Institute Of Technology | Solid-transformation thermal resist |
| FR2620737B1 (fr) * | 1987-09-17 | 1993-04-16 | France Etat | Procede de gravure d'une couche d'oxyde de silicium |
| JP2809087B2 (ja) * | 1994-02-15 | 1998-10-08 | 日本電気株式会社 | 配線形成方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1050409A (https=) * | 1964-09-04 |
-
0
- NL NL136565D patent/NL136565C/xx active
-
1967
- 1967-12-08 US US689090A patent/US3585091A/en not_active Expired - Lifetime
-
1968
- 1968-12-02 FR FR1596758D patent/FR1596758A/fr not_active Expired
- 1968-12-04 GB GB57509/68A patent/GB1254118A/en not_active Expired
- 1968-12-05 DE DE19681812819 patent/DE1812819B2/de not_active Withdrawn
- 1968-12-06 JP JP43089140A patent/JPS5026907B1/ja active Pending
- 1968-12-06 NL NL6817534A patent/NL6817534A/xx unknown
- 1968-12-06 BE BE725077D patent/BE725077A/xx unknown
- 1968-12-08 SE SE16576/68A patent/SE348234B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL136565C (https=) | |
| DE1812819A1 (de) | 1969-08-14 |
| BE725077A (https=) | 1969-05-16 |
| SE348234B (https=) | 1972-08-28 |
| JPS5026907B1 (https=) | 1975-09-04 |
| NL6817534A (https=) | 1969-06-10 |
| GB1254118A (en) | 1971-11-17 |
| US3585091A (en) | 1971-06-15 |
| FR1596758A (https=) | 1970-06-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| E77 | Valid patent as to the heymanns-index 1977 | ||
| EHJ | Ceased/non-payment of the annual fee |