DE1808406C3 - Strahlungsdetektor und Verfahren zu seiner Herstellung - Google Patents

Strahlungsdetektor und Verfahren zu seiner Herstellung

Info

Publication number
DE1808406C3
DE1808406C3 DE1808406A DE1808406A DE1808406C3 DE 1808406 C3 DE1808406 C3 DE 1808406C3 DE 1808406 A DE1808406 A DE 1808406A DE 1808406 A DE1808406 A DE 1808406A DE 1808406 C3 DE1808406 C3 DE 1808406C3
Authority
DE
Germany
Prior art keywords
layer
radiation detector
detector according
electrodes
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1808406A
Other languages
German (de)
English (en)
Other versions
DE1808406A1 (de
DE1808406B2 (de
Inventor
Gerard Cane Maret (Frankreich)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1808406A1 publication Critical patent/DE1808406A1/de
Publication of DE1808406B2 publication Critical patent/DE1808406B2/de
Application granted granted Critical
Publication of DE1808406C3 publication Critical patent/DE1808406C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
DE1808406A 1967-11-14 1968-11-12 Strahlungsdetektor und Verfahren zu seiner Herstellung Expired DE1808406C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR128112 1967-11-14

Publications (3)

Publication Number Publication Date
DE1808406A1 DE1808406A1 (de) 1969-06-19
DE1808406B2 DE1808406B2 (de) 1979-01-04
DE1808406C3 true DE1808406C3 (de) 1979-09-06

Family

ID=8641665

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1808406A Expired DE1808406C3 (de) 1967-11-14 1968-11-12 Strahlungsdetektor und Verfahren zu seiner Herstellung

Country Status (10)

Country Link
US (1) US3619621A (enExample)
JP (1) JPS4837235B1 (enExample)
AT (1) AT314677B (enExample)
BE (1) BE723728A (enExample)
CH (1) CH483125A (enExample)
DE (1) DE1808406C3 (enExample)
FR (1) FR1552072A (enExample)
GB (1) GB1242006A (enExample)
NL (1) NL6816002A (enExample)
SE (1) SE339728B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2649078A1 (de) * 1976-10-28 1978-05-03 Josef Dipl Phys Dr Kemmer Verfahren zur herstellung von halbleiterdetektoren
US4146904A (en) * 1977-12-19 1979-03-27 General Electric Company Radiation detector
US4258254A (en) * 1978-04-25 1981-03-24 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Imaging devices and systems
DE2930584C2 (de) * 1979-07-27 1982-04-29 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Halbleiterbauelement, das den Effekt der gespeicherten Photoleitung ausnutzt
JPS57159073A (en) * 1981-03-26 1982-10-01 Minolta Camera Co Ltd Semiconductor position detector
US6995445B2 (en) * 2003-03-14 2006-02-07 The Trustees Of Princeton University Thin film organic position sensitive detectors
RU2413244C2 (ru) * 2009-05-12 2011-02-27 Государственное образовательное учреждение высшего профессионального образования Иркутский государственный университет путей сообщения (ИрГУПС (ИрИИТ)) Комбинированный полупроводниковый детектор рентгеновского излучения
CN106024926B (zh) * 2016-07-15 2017-05-24 哈尔滨工业大学 快速光电恢复响应的近紫外光电位敏传感器及其制备方法
JP6753194B2 (ja) * 2016-07-29 2020-09-09 株式会社島津製作所 放射線検出器

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2959681A (en) * 1959-06-18 1960-11-08 Fairchild Semiconductor Semiconductor scanning device
US3117229A (en) * 1960-10-03 1964-01-07 Solid State Radiations Inc Solid state radiation detector with separate ohmic contacts to reduce leakage current
US3225198A (en) * 1961-05-16 1965-12-21 Hughes Aircraft Co Method of measuring nuclear radiation utilizing a semiconductor crystal having a lithium compensated intrinsic region
US3207902A (en) * 1963-06-20 1965-09-21 Nuclear Diodes Inc Radiation position detector

Also Published As

Publication number Publication date
FR1552072A (enExample) 1969-01-03
AT314677B (de) 1974-04-25
DE1808406A1 (de) 1969-06-19
CH483125A (de) 1969-12-15
GB1242006A (en) 1971-08-11
US3619621A (en) 1971-11-09
NL6816002A (enExample) 1969-05-19
SE339728B (enExample) 1971-10-18
BE723728A (enExample) 1969-05-12
DE1808406B2 (de) 1979-01-04
JPS4837235B1 (enExample) 1973-11-09

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
8339 Ceased/non-payment of the annual fee