JPS4837235B1 - - Google Patents

Info

Publication number
JPS4837235B1
JPS4837235B1 JP43082654A JP8265468A JPS4837235B1 JP S4837235 B1 JPS4837235 B1 JP S4837235B1 JP 43082654 A JP43082654 A JP 43082654A JP 8265468 A JP8265468 A JP 8265468A JP S4837235 B1 JPS4837235 B1 JP S4837235B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP43082654A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4837235B1 publication Critical patent/JPS4837235B1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
JP43082654A 1967-11-14 1968-11-13 Pending JPS4837235B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR128112 1967-11-14

Publications (1)

Publication Number Publication Date
JPS4837235B1 true JPS4837235B1 (enExample) 1973-11-09

Family

ID=8641665

Family Applications (1)

Application Number Title Priority Date Filing Date
JP43082654A Pending JPS4837235B1 (enExample) 1967-11-14 1968-11-13

Country Status (10)

Country Link
US (1) US3619621A (enExample)
JP (1) JPS4837235B1 (enExample)
AT (1) AT314677B (enExample)
BE (1) BE723728A (enExample)
CH (1) CH483125A (enExample)
DE (1) DE1808406C3 (enExample)
FR (1) FR1552072A (enExample)
GB (1) GB1242006A (enExample)
NL (1) NL6816002A (enExample)
SE (1) SE339728B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018017685A (ja) * 2016-07-29 2018-02-01 株式会社島津製作所 放射線検出器

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2649078A1 (de) * 1976-10-28 1978-05-03 Josef Dipl Phys Dr Kemmer Verfahren zur herstellung von halbleiterdetektoren
US4146904A (en) * 1977-12-19 1979-03-27 General Electric Company Radiation detector
US4258254A (en) * 1978-04-25 1981-03-24 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Imaging devices and systems
DE2930584C2 (de) * 1979-07-27 1982-04-29 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Halbleiterbauelement, das den Effekt der gespeicherten Photoleitung ausnutzt
JPS57159073A (en) * 1981-03-26 1982-10-01 Minolta Camera Co Ltd Semiconductor position detector
US6995445B2 (en) * 2003-03-14 2006-02-07 The Trustees Of Princeton University Thin film organic position sensitive detectors
RU2413244C2 (ru) * 2009-05-12 2011-02-27 Государственное образовательное учреждение высшего профессионального образования Иркутский государственный университет путей сообщения (ИрГУПС (ИрИИТ)) Комбинированный полупроводниковый детектор рентгеновского излучения
CN106024926B (zh) * 2016-07-15 2017-05-24 哈尔滨工业大学 快速光电恢复响应的近紫外光电位敏传感器及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2959681A (en) * 1959-06-18 1960-11-08 Fairchild Semiconductor Semiconductor scanning device
US3117229A (en) * 1960-10-03 1964-01-07 Solid State Radiations Inc Solid state radiation detector with separate ohmic contacts to reduce leakage current
US3225198A (en) * 1961-05-16 1965-12-21 Hughes Aircraft Co Method of measuring nuclear radiation utilizing a semiconductor crystal having a lithium compensated intrinsic region
US3207902A (en) * 1963-06-20 1965-09-21 Nuclear Diodes Inc Radiation position detector

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018017685A (ja) * 2016-07-29 2018-02-01 株式会社島津製作所 放射線検出器

Also Published As

Publication number Publication date
FR1552072A (enExample) 1969-01-03
DE1808406C3 (de) 1979-09-06
AT314677B (de) 1974-04-25
DE1808406A1 (de) 1969-06-19
CH483125A (de) 1969-12-15
GB1242006A (en) 1971-08-11
US3619621A (en) 1971-11-09
NL6816002A (enExample) 1969-05-19
SE339728B (enExample) 1971-10-18
BE723728A (enExample) 1969-05-12
DE1808406B2 (de) 1979-01-04

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