DE1764164B1 - Sperrschicht feldeffektransistor - Google Patents

Sperrschicht feldeffektransistor

Info

Publication number
DE1764164B1
DE1764164B1 DE19681764164 DE1764164A DE1764164B1 DE 1764164 B1 DE1764164 B1 DE 1764164B1 DE 19681764164 DE19681764164 DE 19681764164 DE 1764164 A DE1764164 A DE 1764164A DE 1764164 B1 DE1764164 B1 DE 1764164B1
Authority
DE
Germany
Prior art keywords
grid
effect transistor
field effect
electrode
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19681764164
Other languages
German (de)
English (en)
Inventor
Drangeid Karsten Elvin
Statz Horst Franz
Mohr Theodor Oskar
Muench Waldemar Von
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
IBM Deutschland GmbH
Original Assignee
IBM Deutschland GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by IBM Deutschland GmbH filed Critical IBM Deutschland GmbH
Publication of DE1764164B1 publication Critical patent/DE1764164B1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/139—Schottky barrier

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
DE19681764164 1967-04-18 1968-04-13 Sperrschicht feldeffektransistor Withdrawn DE1764164B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH550867A CH461646A (de) 1967-04-18 1967-04-18 Feld-Effekt-Transistor und Verfahren zu seiner Herstellung

Publications (1)

Publication Number Publication Date
DE1764164B1 true DE1764164B1 (de) 1972-02-03

Family

ID=4294788

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19681764164 Withdrawn DE1764164B1 (de) 1967-04-18 1968-04-13 Sperrschicht feldeffektransistor

Country Status (5)

Country Link
US (1) US3609477A (enExample)
CH (1) CH461646A (enExample)
DE (1) DE1764164B1 (enExample)
FR (1) FR1557327A (enExample)
GB (1) GB1180186A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2321796A1 (de) * 1973-04-30 1974-11-14 Licentia Gmbh Feldeffekttransistor

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3804681A (en) * 1967-04-18 1974-04-16 Ibm Method for making a schottky-barrier field effect transistor
DE2120388A1 (de) * 1970-04-28 1971-12-16 Agency Ind Science Techn Verbindungshalbleitervorrichtung
CH506188A (de) * 1970-09-02 1971-04-15 Ibm Feldeffekt-Transistor
US4212022A (en) * 1973-04-30 1980-07-08 Licentia Patent-Verwaltungs-G.M.B.H. Field effect transistor with gate and drain electrodes on the side surface of a mesa
DE2321797C3 (de) * 1973-04-30 1981-12-17 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Sperrschicht-Feldeffekttransistor
DE2631873C2 (de) * 1976-07-15 1986-07-31 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung eines Halbleiterbauelements mit einem Schottky-Kontakt auf einem zu einem anderen Bereich justierten Gatebereich und mit kleinem Serienwiderstand
US4109029A (en) * 1977-01-24 1978-08-22 Hughes Aircraft Company High resolution electron beam microfabrication process for fabricating small geometry semiconductor devices
US4155784A (en) * 1977-04-08 1979-05-22 Trw Inc. Process for epitaxially growing a gallium arsenide layer having reduced silicon contaminants on a gallium arsenide substrate
US4111725A (en) * 1977-05-06 1978-09-05 Bell Telephone Laboratories, Incorporated Selective lift-off technique for fabricating gaas fets
DE2824026A1 (de) * 1978-06-01 1979-12-20 Licentia Gmbh Verfahren zum herstellen eines sperrschicht-feldeffekttransistors
US4222164A (en) * 1978-12-29 1980-09-16 International Business Machines Corporation Method of fabrication of self-aligned metal-semiconductor field effect transistors
US4404732A (en) * 1981-12-07 1983-09-20 Ibm Corporation Self-aligned extended epitaxy mesfet fabrication process
US4426767A (en) 1982-01-11 1984-01-24 Sperry Cororation Selective epitaxial etch planar processing for gallium arsenide semiconductors
US4837175A (en) * 1983-02-15 1989-06-06 Eaton Corporation Making a buried channel FET with lateral growth over amorphous region
US4601096A (en) * 1983-02-15 1986-07-22 Eaton Corporation Method for fabricating buried channel field effect transistor for microwave and millimeter frequencies utilizing molecular beam epitaxy
US4833095A (en) * 1985-02-19 1989-05-23 Eaton Corporation Method for buried channel field effect transistor for microwave and millimeter frequencies utilizing ion implantation
GB2137412B (en) * 1983-03-15 1987-03-04 Standard Telephones Cables Ltd Semiconductor device
US4724220A (en) * 1985-02-19 1988-02-09 Eaton Corporation Method for fabricating buried channel field-effect transistor for microwave and millimeter frequencies
US4935789A (en) * 1985-02-19 1990-06-19 Eaton Corporation Buried channel FET with lateral growth over amorphous region
US4624004A (en) 1985-07-15 1986-11-18 Eaton Corporation Buried channel MESFET with backside source contact
US5140387A (en) * 1985-11-08 1992-08-18 Lockheed Missiles & Space Company, Inc. Semiconductor device in which gate region is precisely aligned with source and drain regions
JPS6346779A (ja) * 1986-08-15 1988-02-27 Nec Corp 半導体装置
US5252842A (en) * 1991-07-26 1993-10-12 Westinghouse Electric Corp. Low-loss semiconductor device and backside etching method for manufacturing same
RU2130668C1 (ru) * 1994-09-30 1999-05-20 Акционерное общество закрытого типа "VL" Полевой транзистор типа металл - диэлектрик-полупроводник
KR100508548B1 (ko) * 2003-04-16 2005-08-17 한국전자통신연구원 쇼트키 장벽 트랜지스터 및 그 제조방법
US7679125B2 (en) * 2005-12-14 2010-03-16 Freescale Semiconductor, Inc. Back-gated semiconductor device with a storage layer and methods for forming thereof
US8927971B2 (en) * 2009-04-06 2015-01-06 University Of Kentucky Research Foundation Semiconducting compounds and devices incorporating same
JP2013077630A (ja) * 2011-09-29 2013-04-25 Fujitsu Ltd 半導体装置及びその製造方法
CN112287506B (zh) * 2019-07-10 2024-06-04 尼克森微电子股份有限公司 功率金属氧化物半导体晶体管的模拟模型

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2791758A (en) * 1955-02-18 1957-05-07 Bell Telephone Labor Inc Semiconductive translating device
DE1168569B (de) * 1960-09-15 1964-04-23 Dr Stanislas Teszner Unipolartransistor mit teilweise negativer Charakteristik und Vorrichtungen zu seinem Herstellen
US3223904A (en) * 1962-02-19 1965-12-14 Motorola Inc Field effect device and method of manufacturing the same
BE682752A (enExample) * 1965-06-18 1966-12-19 Philips Nv

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2791758A (en) * 1955-02-18 1957-05-07 Bell Telephone Labor Inc Semiconductive translating device
DE1168569B (de) * 1960-09-15 1964-04-23 Dr Stanislas Teszner Unipolartransistor mit teilweise negativer Charakteristik und Vorrichtungen zu seinem Herstellen
US3223904A (en) * 1962-02-19 1965-12-14 Motorola Inc Field effect device and method of manufacturing the same
BE682752A (enExample) * 1965-06-18 1966-12-19 Philips Nv

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2321796A1 (de) * 1973-04-30 1974-11-14 Licentia Gmbh Feldeffekttransistor

Also Published As

Publication number Publication date
US3609477A (en) 1971-09-28
FR1557327A (enExample) 1969-02-14
GB1180186A (en) 1970-02-04
CH461646A (de) 1968-08-31

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee