DE1696628B2 - Verfahren zum ueberziehen der oberflaeche eines gegenstandes mit silikatglas - Google Patents

Verfahren zum ueberziehen der oberflaeche eines gegenstandes mit silikatglas

Info

Publication number
DE1696628B2
DE1696628B2 DE19681696628 DE1696628A DE1696628B2 DE 1696628 B2 DE1696628 B2 DE 1696628B2 DE 19681696628 DE19681696628 DE 19681696628 DE 1696628 A DE1696628 A DE 1696628A DE 1696628 B2 DE1696628 B2 DE 1696628B2
Authority
DE
Germany
Prior art keywords
silane
oxygen
reactant
glass
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19681696628
Other languages
German (de)
English (en)
Other versions
DE1696628A1 (de
Inventor
Werner Somerset N.J. Kern (V.St.A.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE1696628A1 publication Critical patent/DE1696628A1/de
Publication of DE1696628B2 publication Critical patent/DE1696628B2/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C1/00—Ingredients generally applicable to manufacture of glasses, glazes, or vitreous enamels
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23D—ENAMELLING OF, OR APPLYING A VITREOUS LAYER TO, METALS
    • C23D5/00—Coating with enamels or vitreous layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6928—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
    • H10P14/6929—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing aluminium, e.g. AlSiOx
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2490/00—Intermixed layers
    • B05D2490/50—Intermixed layers compositions varying with a gradient perpendicular to the surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H10P14/6923—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/173—Washed emitter

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Inorganic Chemistry (AREA)
  • Glass Compositions (AREA)
  • Surface Treatment Of Glass (AREA)
  • Formation Of Insulating Films (AREA)
DE19681696628 1967-03-17 1968-03-18 Verfahren zum ueberziehen der oberflaeche eines gegenstandes mit silikatglas Pending DE1696628B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US62390567A 1967-03-17 1967-03-17

Publications (2)

Publication Number Publication Date
DE1696628A1 DE1696628A1 (de) 1971-12-30
DE1696628B2 true DE1696628B2 (de) 1972-08-31

Family

ID=24499855

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19681696628 Pending DE1696628B2 (de) 1967-03-17 1968-03-18 Verfahren zum ueberziehen der oberflaeche eines gegenstandes mit silikatglas

Country Status (7)

Country Link
US (1) US3481781A (enExample)
DE (1) DE1696628B2 (enExample)
ES (1) ES351638A1 (enExample)
FR (1) FR1561537A (enExample)
GB (1) GB1202631A (enExample)
MY (1) MY7300266A (enExample)
SE (1) SE322104B (enExample)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4817792B1 (enExample) * 1967-03-29 1973-05-31
US3783500A (en) * 1967-04-26 1974-01-08 Hitachi Ltd Method of producing semiconductor devices
US3841928A (en) * 1969-06-06 1974-10-15 I Miwa Production of semiconductor photoelectric conversion target
US3706597A (en) * 1970-11-23 1972-12-19 Ibm Glass vapor deposition on surfaces of semiconductor elements
US3850687A (en) * 1971-05-26 1974-11-26 Rca Corp Method of densifying silicate glasses
US3755015A (en) * 1971-12-10 1973-08-28 Gen Electric Anti-reflection coating for semiconductor diode array targets
DE2452289A1 (de) * 1974-11-04 1976-05-06 Siemens Ag Halbleiterbauelement
JPS5183473A (en) * 1975-01-20 1976-07-22 Hitachi Ltd Fujunbutsuno doopinguhoho
US4005240A (en) * 1975-03-10 1977-01-25 Aeronutronic Ford Corporation Germanium device passivation
JPS51144183A (en) * 1975-06-06 1976-12-10 Hitachi Ltd Semiconductor element containing surface protection film
GB1553243A (en) * 1975-08-04 1979-09-26 Gen Electric Semiconductor
US4017340A (en) * 1975-08-04 1977-04-12 General Electric Company Semiconductor element having a polymeric protective coating and glass coating overlay
US4040874A (en) * 1975-08-04 1977-08-09 General Electric Company Semiconductor element having a polymeric protective coating and glass coating overlay
US4196232A (en) * 1975-12-18 1980-04-01 Rca Corporation Method of chemically vapor-depositing a low-stress glass layer
US4098923A (en) * 1976-06-07 1978-07-04 Motorola, Inc. Pyrolytic deposition of silicon dioxide on semiconductors using a shrouded boat
US4033286A (en) * 1976-07-12 1977-07-05 California Institute Of Technology Chemical vapor deposition reactor
US4217375A (en) * 1977-08-30 1980-08-12 Bell Telephone Laboratories, Incorporated Deposition of doped silicon oxide films
JPS5694751A (en) * 1979-12-28 1981-07-31 Fujitsu Ltd Vapor growth method
US4349584A (en) * 1981-04-28 1982-09-14 Rca Corporation Process for tapering openings in ternary glass coatings
US4363830A (en) * 1981-06-22 1982-12-14 Rca Corporation Method of forming tapered contact holes for integrated circuit devices
US4433008A (en) * 1982-05-11 1984-02-21 Rca Corporation Doped-oxide diffusion of phosphorus using borophosphosilicate glass
US4395304A (en) * 1982-05-11 1983-07-26 Rca Corporation Selective etching of phosphosilicate glass
US4420503A (en) * 1982-05-17 1983-12-13 Rca Corporation Low temperature elevated pressure glass flow/re-flow process
US4557950A (en) * 1984-05-18 1985-12-10 Thermco Systems, Inc. Process for deposition of borophosphosilicate glass
US4866497A (en) * 1984-06-01 1989-09-12 General Electric Company Infra-red charge-coupled device image sensor
US4548671A (en) * 1984-07-23 1985-10-22 Rca Corporation Method of making a charge-coupled device imager which includes an array of Schottky-barrier detectors
US4546016A (en) * 1984-08-06 1985-10-08 Rca Corporation Deposition of borophosphosilicate glass
CA1251100A (en) * 1985-05-17 1989-03-14 Richard Cloutier Chemical vapor deposition
ATE64237T1 (de) * 1985-05-22 1991-06-15 Siemens Ag Verfahren zum herstellen von mit bor und phosphor dotierten siliziumoxid-schichten fuer integrierte halbleiterschaltungen.
US4717631A (en) * 1986-01-16 1988-01-05 Rca Corporation Silicon oxynitride passivated semiconductor body and method of making same
GB8914047D0 (en) * 1989-06-19 1989-08-09 Glaverbel Method of and apparatus for pyrolytically forming an oxide coating on a hot glass substrate
US5221352A (en) * 1989-06-19 1993-06-22 Glaverbel Apparatus for pyrolytically forming an oxide coating on a hot glass substrate
US5906861A (en) * 1993-07-20 1999-05-25 Raytheon Company Apparatus and method for depositing borophosphosilicate glass on a substrate
DE69434606T8 (de) 1993-08-05 2007-05-16 Matsushita Electric Industrial Co., Ltd., Kadoma Halbleiterbauelement mit Kondensator und dessen Herstellungsverfahren
US6013584A (en) * 1997-02-19 2000-01-11 Applied Materials, Inc. Methods and apparatus for forming HDP-CVD PSG film used for advanced pre-metal dielectric layer applications
US6073576A (en) 1997-11-25 2000-06-13 Cvc Products, Inc. Substrate edge seal and clamp for low-pressure processing equipment
US6207522B1 (en) 1998-11-23 2001-03-27 Microcoating Technologies Formation of thin film capacitors
US20040134352A1 (en) * 2003-01-13 2004-07-15 David Stacey Silica trap for phosphosilicate glass deposition tool
JP5696543B2 (ja) * 2011-03-17 2015-04-08 セイコーエプソン株式会社 半導体基板の製造方法
US11186917B2 (en) 2018-01-30 2021-11-30 The Board Of Trustees Of The University Of Alabama Composite electrodes and methods for the fabrication and use thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1142646A (fr) * 1956-02-11 1957-09-20 Cedel Nouvelles résistances électriques et leurs procédés de réalisation
US3117832A (en) * 1960-02-09 1964-01-14 Thomas Andre Method and apparatus for biological sterilization and related processes
NL284295A (enExample) * 1961-10-12 1900-01-01
US3228812A (en) * 1962-12-04 1966-01-11 Dickson Electronics Corp Method of forming semiconductors
US3306768A (en) * 1964-01-08 1967-02-28 Motorola Inc Method of forming thin oxide films
US3396052A (en) * 1965-07-14 1968-08-06 Bell Telephone Labor Inc Method for coating semiconductor devices with silicon oxide

Also Published As

Publication number Publication date
ES351638A1 (es) 1969-06-01
GB1202631A (en) 1970-08-19
US3481781A (en) 1969-12-02
MY7300266A (en) 1973-12-31
FR1561537A (enExample) 1969-03-28
DE1696628A1 (de) 1971-12-30
SE322104B (enExample) 1970-03-23

Similar Documents

Publication Publication Date Title
DE1696628B2 (de) Verfahren zum ueberziehen der oberflaeche eines gegenstandes mit silikatglas
DE2625243C3 (de) Chemisches Dampfabscheideverfahren für Zinkborsilikatgläser
DE60305605T2 (de) Schicht bildendes Apparat und Verfahren
DE10064178A1 (de) Verfahren und Vorrichtung zur Ausbildung einer Dünnschicht
DE2140092C3 (de) Verfahren zur Herstellung dünner Schichten auf Substraten
DE3249203C2 (enExample)
DE69017354T2 (de) Dampfablagerungsapparat.
DE2716182A1 (de) Verfahren und vorrichtung zur ausbildung einer beschichtung aus einem metall oder einer metallverbindung
DE1614540A1 (de) Halbleiteranordnung
DE3515135A1 (de) Verfahren zur abscheidung von borphosphorsilicatglas auf silicium-wafern
DE3430009C2 (de) Verfahren und Vorrichtung zum Dotieren von Halbleitersubstraten
DE2929092A1 (de) Verfahren zur bildung eines zinnoxidueberzugs auf glassubstraten
DE1696621C3 (de) Verfahren und Vorrichtung zur Herstellung von Überzügen aus stöchiometrischen Siliciumkarbid auf Drähten
DE1515890C3 (de) Verfahren zum Herstellen von Widerstanden und Leitungsfuhrungen fur mikroelektromsche Schaltkreise
DE2625064A1 (de) Verfahren zum erschmelzen von glas sehr hoher reinheit, insbesondere zur herstellung von glasfaseroptiken
DE1521605A1 (de) Verfahren zum Herstellen von Oxidfilmen auf Unterlagen
DE3644654C2 (enExample)
DE1696607C3 (de) Verfahren zum Herstellen einer im wesentlichen aus Silicium und Stickstoff bestehenden Isolierschicht
DE1771575A1 (de) Verfahren zum Herstellen eines Titandioxidfilms
DE1621272C3 (de) Verfahren zur Induzierung eines Leitfähigkeitstyps in einem Halbleiter
DE2148120B2 (de) Verfahren zum Niederschlagen von Glasfilmen
DE1667771C3 (de) Verfahren zur kontinuierlichen Herstellung von Bordrähten und Vorrichtung zur Durchführung des Verfahrens
DE1237400C2 (de) Verfahren zum Vakuumaufdampfen eines feuchtigkeitsfesten isolierenden UEberzuges aufHalbleiterbauelemente, insbesondere auf Halbleiterbauelemente mit pn-UEbergang
DE1544276C3 (de) Verfahren zum Herstellen eines dotierten Halbleiterstabes durch tiegelloses Zonenschmelzen
DE1546001C3 (de) Verfahren zur Herstellung dünner, dielektrischer Titanoxydschichten auf leitenden und halbleitenden Substraten