DE1644013B2 - Verfahren zum eindiffundieren von dotierungsstoffen aus der gasphase in eine halbleiteroberflaeche - Google Patents

Verfahren zum eindiffundieren von dotierungsstoffen aus der gasphase in eine halbleiteroberflaeche

Info

Publication number
DE1644013B2
DE1644013B2 DE1967S0111042 DES0111042A DE1644013B2 DE 1644013 B2 DE1644013 B2 DE 1644013B2 DE 1967S0111042 DE1967S0111042 DE 1967S0111042 DE S0111042 A DES0111042 A DE S0111042A DE 1644013 B2 DE1644013 B2 DE 1644013B2
Authority
DE
Germany
Prior art keywords
layer
nitride layer
silicon nitride
semiconductor surface
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE1967S0111042
Other languages
German (de)
English (en)
Other versions
DE1644013A1 (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to DE1967S0111042 priority Critical patent/DE1644013B2/de
Priority to NL6809830A priority patent/NL6809830A/xx
Priority to FR1576032D priority patent/FR1576032A/fr
Priority to CH1119768A priority patent/CH505468A/de
Priority to AT725268A priority patent/AT278905B/de
Priority to SE10262/68A priority patent/SE345041B/xx
Priority to GB1228662D priority patent/GB1228662A/en
Publication of DE1644013A1 publication Critical patent/DE1644013A1/de
Publication of DE1644013B2 publication Critical patent/DE1644013B2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
    • H01L21/02326—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen into a nitride layer, e.g. changing SiN to SiON
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Local Oxidation Of Silicon (AREA)
DE1967S0111042 1967-05-27 1967-05-27 Verfahren zum eindiffundieren von dotierungsstoffen aus der gasphase in eine halbleiteroberflaeche Granted DE1644013B2 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DE1967S0111042 DE1644013B2 (de) 1967-05-27 1967-05-27 Verfahren zum eindiffundieren von dotierungsstoffen aus der gasphase in eine halbleiteroberflaeche
NL6809830A NL6809830A (enrdf_load_stackoverflow) 1967-05-27 1968-07-11
FR1576032D FR1576032A (enrdf_load_stackoverflow) 1967-05-27 1968-07-24
CH1119768A CH505468A (de) 1967-05-27 1968-07-25 Verfahren zum Eindiffundieren von Dotierungsstoff aus der Gasphase
AT725268A AT278905B (de) 1967-05-27 1968-07-25 Verfahren zum Eindiffundieren von Dotierungsstoff aus der Gasphase
SE10262/68A SE345041B (enrdf_load_stackoverflow) 1967-05-27 1968-07-26
GB1228662D GB1228662A (enrdf_load_stackoverflow) 1967-05-27 1968-07-26

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1967S0111042 DE1644013B2 (de) 1967-05-27 1967-05-27 Verfahren zum eindiffundieren von dotierungsstoffen aus der gasphase in eine halbleiteroberflaeche

Publications (2)

Publication Number Publication Date
DE1644013A1 DE1644013A1 (de) 1970-09-24
DE1644013B2 true DE1644013B2 (de) 1976-08-12

Family

ID=7530693

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1967S0111042 Granted DE1644013B2 (de) 1967-05-27 1967-05-27 Verfahren zum eindiffundieren von dotierungsstoffen aus der gasphase in eine halbleiteroberflaeche

Country Status (7)

Country Link
AT (1) AT278905B (enrdf_load_stackoverflow)
CH (1) CH505468A (enrdf_load_stackoverflow)
DE (1) DE1644013B2 (enrdf_load_stackoverflow)
FR (1) FR1576032A (enrdf_load_stackoverflow)
GB (1) GB1228662A (enrdf_load_stackoverflow)
NL (1) NL6809830A (enrdf_load_stackoverflow)
SE (1) SE345041B (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
SE345041B (enrdf_load_stackoverflow) 1972-05-08
DE1644013A1 (de) 1970-09-24
FR1576032A (enrdf_load_stackoverflow) 1969-07-25
NL6809830A (enrdf_load_stackoverflow) 1969-01-29
CH505468A (de) 1971-03-31
GB1228662A (enrdf_load_stackoverflow) 1971-04-15
AT278905B (de) 1970-02-25

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
E77 Valid patent as to the heymanns-index 1977
EF Willingness to grant licences