GB1228662A - - Google Patents

Info

Publication number
GB1228662A
GB1228662A GB1228662DA GB1228662A GB 1228662 A GB1228662 A GB 1228662A GB 1228662D A GB1228662D A GB 1228662DA GB 1228662 A GB1228662 A GB 1228662A
Authority
GB
United Kingdom
Prior art keywords
sio
layer
aperture
july
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1228662A publication Critical patent/GB1228662A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
    • H01L21/02326—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen into a nitride layer, e.g. changing SiN to SiON
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

1,228,662. Diffusion in semi-conductors. SIEMENS A.G. 26 July, 1968 [27 July, 1967], No. 35753/68. Heading H1K. A window is formed in a protective layer 2 of Si 3 N 4 on the surface of a semi-conductor body 1, e.g. of Si, by providing the Si 3 N 4 layer 2 with a covering 3 of SiO 2 , etching an aperture in the layer 3, e.g. using a photo-varnish mask 4, converting the Si 3 N 4 exposed in the aperture to SiO 2 by thermal oxidation, and etching the SiO 2 away by means of an etchant which does not attack Si 3 N 4 , e.g. buffered HF. A dopant such as Ga, Zr or Cd is then diffused from the gas phase into the body 1 through the aperture. The Si 3 N 4 layer 2 is preferably deposited at above 800‹ C., and conversion of the Si surface to Si 3 N 4 by reaction with nascent nitrogen at above 800‹ C. is also referred to. The SiO 2 covering 3 may be formed by pyrolytic decomposition of a suitable reaction gas or by conversion of the outer portion of the Si 3 N 4 layer 2 to SiO 2 by oxidation in moist O 2 .
GB1228662D 1967-05-27 1968-07-26 Expired GB1228662A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1967S0111042 DE1644013B2 (en) 1967-05-27 1967-05-27 PROCESS FOR DIFFUSING DOPENING SUBSTANCES FROM THE GAS PHASE INTO A SEMICONDUCTOR SURFACE

Publications (1)

Publication Number Publication Date
GB1228662A true GB1228662A (en) 1971-04-15

Family

ID=7530693

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1228662D Expired GB1228662A (en) 1967-05-27 1968-07-26

Country Status (7)

Country Link
AT (1) AT278905B (en)
CH (1) CH505468A (en)
DE (1) DE1644013B2 (en)
FR (1) FR1576032A (en)
GB (1) GB1228662A (en)
NL (1) NL6809830A (en)
SE (1) SE345041B (en)

Also Published As

Publication number Publication date
CH505468A (en) 1971-03-31
DE1644013A1 (en) 1970-09-24
DE1644013B2 (en) 1976-08-12
FR1576032A (en) 1969-07-25
AT278905B (en) 1970-02-25
SE345041B (en) 1972-05-08
NL6809830A (en) 1969-01-29

Similar Documents

Publication Publication Date Title
GB1276012A (en) Methods of producing antimony-containing layers on semiconductor bodies
JPS5693344A (en) Manufacture of semiconductor device
GB1060925A (en) Growth of insulating films such as for semiconductor devices
GB1452637A (en) Diffusion of impurities into a semiconductor
GB1281298A (en) IMPROVEMENTS IN OR RELATING TO THE PRODUCTION OF A PROTECTIVE LAYER OF SiO2 ON THE SURFACE OF SEMICONDUCTOR PLATES
GB1090649A (en) Surface treatment for semiconductor devices
GB1228662A (en)
GB1397684A (en) Diffusion of impurity into semiconductor material
JPS5659694A (en) Manufacture of thin film
GB1051451A (en)
ES337635A1 (en) Method of making a semiconductor device having two insulating coatings
JPS5329072A (en) Gallium arsenide semiconductor device
JPS54586A (en) Production of semiconductor device
JPS55120131A (en) Manufacture of semiconductor device
GB1093567A (en) Protection of silicon surfaces from silicon carbide deposition
JPS5268371A (en) Semiconductor device
JPS5671943A (en) Oxide film coating of compound semiconductor device
GB1166072A (en) Method of Producing Doped Zones in Semiconductor Bodies
JPS5546533A (en) Method of producing insulating film of silicon oxide
GB940931A (en) Improvements in the manufacture of germanium semi-conductor devices
YOUICHI Impurity diffusion into semiconductor crystal
JPS5279871A (en) Production of impurity diffused layer
JPS54162967A (en) Manufacture of semiconductor device
JPS52112281A (en) Manufacture of semiconductor
GB1266431A (en)

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years