GB1093567A - Protection of silicon surfaces from silicon carbide deposition - Google Patents
Protection of silicon surfaces from silicon carbide depositionInfo
- Publication number
- GB1093567A GB1093567A GB49703/65A GB4970365A GB1093567A GB 1093567 A GB1093567 A GB 1093567A GB 49703/65 A GB49703/65 A GB 49703/65A GB 4970365 A GB4970365 A GB 4970365A GB 1093567 A GB1093567 A GB 1093567A
- Authority
- GB
- United Kingdom
- Prior art keywords
- silicon
- silicon carbide
- deposition
- oxide layer
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
Abstract
1,093,567. Semi-conductor devices. DOW CORNING CORPORATION. Nov. 23, 1965 [April 9, 1965], No. 49703/65. Heading H1K. In order to protect portions of a silicon surface against silicon carbide deposition they are provided with a layer of silicon oxide which is removed by etching after the deposition process has been completed so that any silicon carbide deposited thereon is also removed. In a preferred embodiment a silicon body is treated in an oxidizing atmosphere and the oxide layer so formed is removed from those portions of the surface on which silicon carbide is to be deposited. After the deposition the remaining protective oxide layer is removed with hydrofluoric acid. If the oxide is entirely covered, a hole must first be made through the overlying silicon carbide, e.g. by using a chlorine-oxygen etch, to allow the hydrofluoric acid to reach the oxide layer.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US44706565A | 1965-04-09 | 1965-04-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1093567A true GB1093567A (en) | 1967-12-06 |
Family
ID=23774869
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB49703/65A Expired GB1093567A (en) | 1965-04-09 | 1965-11-23 | Protection of silicon surfaces from silicon carbide deposition |
Country Status (4)
Country | Link |
---|---|
CH (1) | CH482029A (en) |
DE (1) | DE1293518B (en) |
GB (1) | GB1093567A (en) |
NL (1) | NL6604771A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4560642A (en) * | 1976-08-27 | 1985-12-24 | Toyko Shibaura Electric Co., Ltd. | Method of manufacturing a semiconductor device |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE920306C (en) * | 1952-10-09 | 1954-11-18 | Alweg Forschung G M B H | Track-bound means of transport with facility for area traffic |
DE930533C (en) * | 1952-10-31 | 1955-07-18 | Siemens Ag | Device for inductive train control in rail vehicles |
-
1965
- 1965-11-23 GB GB49703/65A patent/GB1093567A/en not_active Expired
-
1966
- 1966-04-04 DE DED49781A patent/DE1293518B/en active Pending
- 1966-04-07 NL NL6604771A patent/NL6604771A/xx unknown
- 1966-04-07 CH CH513666A patent/CH482029A/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4560642A (en) * | 1976-08-27 | 1985-12-24 | Toyko Shibaura Electric Co., Ltd. | Method of manufacturing a semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
DE1293518B (en) | 1969-04-24 |
NL6604771A (en) | 1966-10-10 |
CH482029A (en) | 1969-11-30 |
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