DE1621325B2 - Verfahren und Vorrichtung zum Aufbringen einer Schicht eines Überzugstorfes auf eine Fläche - Google Patents
Verfahren und Vorrichtung zum Aufbringen einer Schicht eines Überzugstorfes auf eine FlächeInfo
- Publication number
- DE1621325B2 DE1621325B2 DE1621325A DE1621325A DE1621325B2 DE 1621325 B2 DE1621325 B2 DE 1621325B2 DE 1621325 A DE1621325 A DE 1621325A DE 1621325 A DE1621325 A DE 1621325A DE 1621325 B2 DE1621325 B2 DE 1621325B2
- Authority
- DE
- Germany
- Prior art keywords
- coating material
- carrier
- plasma
- flow
- reaction chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 42
- 239000003415 peat Substances 0.000 title 1
- 238000000576 coating method Methods 0.000 claims description 52
- 239000011248 coating agent Substances 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 46
- 238000006243 chemical reaction Methods 0.000 claims description 18
- 239000012159 carrier gas Substances 0.000 claims description 11
- 229910052711 selenium Inorganic materials 0.000 claims description 10
- 239000011669 selenium Substances 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 10
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000007740 vapor deposition Methods 0.000 claims description 5
- 238000003860 storage Methods 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 230000005284 excitation Effects 0.000 claims description 2
- 239000012876 carrier material Substances 0.000 claims 7
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 230000007704 transition Effects 0.000 claims 1
- 210000002381 plasma Anatomy 0.000 description 36
- 239000010410 layer Substances 0.000 description 23
- 239000004033 plastic Substances 0.000 description 8
- 229920003023 plastic Polymers 0.000 description 8
- 239000010408 film Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 150000004678 hydrides Chemical class 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- 238000005019 vapor deposition process Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerol Natural products OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- 229910003271 Ni-Fe Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000010951 brass Substances 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- -1 glycerol ester Chemical class 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 125000003748 selenium group Chemical group *[Se]* 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08207—Selenium-based
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US48235465A | 1965-08-25 | 1965-08-25 | |
| US77933968A | 1968-11-27 | 1968-11-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1621325A1 DE1621325A1 (de) | 1971-05-13 |
| DE1621325B2 true DE1621325B2 (de) | 1975-08-07 |
Family
ID=27047253
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1621325A Pending DE1621325B2 (de) | 1965-08-25 | 1966-08-23 | Verfahren und Vorrichtung zum Aufbringen einer Schicht eines Überzugstorfes auf eine Fläche |
Country Status (4)
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR95985E (fr) * | 1966-05-16 | 1972-05-19 | Rank Xerox Ltd | Semi-conducteurs vitreux et leur procédé de fabrication sous forme de pellicules minces. |
| US3776181A (en) * | 1970-02-02 | 1973-12-04 | Ransburg Electro Coating Corp | Deposition apparatus for an organometallic material |
| US3906892A (en) * | 1971-04-27 | 1975-09-23 | Cit Alcatel | Plasma deposition of thin layers of substrated or the like |
| FR2236963B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1973-07-13 | 1977-02-18 | Cit Alcatel | |
| US4099969A (en) * | 1974-10-10 | 1978-07-11 | Xerox Corporation | Coating method to improve adhesion of photoconductors |
| DE2549405A1 (de) * | 1974-11-05 | 1976-05-06 | Eastman Kodak Co | Verfahren zum niederschlagen einer schicht aus photosensitivem material auf einer oberflaeche |
| US4091257A (en) * | 1975-02-24 | 1978-05-23 | General Electric Company | Deep diode devices and method and apparatus |
| US4013463A (en) * | 1975-08-15 | 1977-03-22 | Leder Lewis B | Photoreceptor fabrication utilizing AC ion plating |
| US4132816A (en) * | 1976-02-25 | 1979-01-02 | United Technologies Corporation | Gas phase deposition of aluminum using a complex aluminum halide of an alkali metal or an alkaline earth metal as an activator |
| US4223048A (en) * | 1978-08-07 | 1980-09-16 | Pacific Western Systems | Plasma enhanced chemical vapor processing of semiconductive wafers |
| JPS6029295B2 (ja) * | 1979-08-16 | 1985-07-10 | 舜平 山崎 | 非単結晶被膜形成法 |
| US4509451A (en) * | 1983-03-29 | 1985-04-09 | Colromm, Inc. | Electron beam induced chemical vapor deposition |
| JPS60502093A (ja) * | 1983-08-25 | 1985-12-05 | ブセソユズニイ ナウチノ−イスレドバテルスキイ インストウルメンタルニイ インステイテユト | 切削工具およびその製造方法 |
| US4500565A (en) * | 1983-09-28 | 1985-02-19 | Ushio Denki Kabushiki Kaisha | Deposition process |
| US4505949A (en) * | 1984-04-25 | 1985-03-19 | Texas Instruments Incorporated | Thin film deposition using plasma-generated source gas |
| CN85106828B (zh) * | 1985-09-10 | 1987-09-09 | 张戈飞 | 金属零件表面形成硫化物层的方法及设备 |
| US5707692A (en) * | 1990-10-23 | 1998-01-13 | Canon Kabushiki Kaisha | Apparatus and method for processing a base substance using plasma and a magnetic field |
| US6015595A (en) * | 1998-05-28 | 2000-01-18 | Felts; John T. | Multiple source deposition plasma apparatus |
| JP3697505B2 (ja) * | 2000-03-17 | 2005-09-21 | 国立大学法人東京工業大学 | 薄膜形成方法 |
| JP5164107B2 (ja) * | 2008-07-01 | 2013-03-13 | 株式会社ユーテック | プラズマｃｖｄ装置、薄膜の製造方法及び磁気記録媒体の製造方法 |
| CN103874316B (zh) * | 2014-03-24 | 2016-05-11 | 青岛科技大学 | 一种实验室用感应等离子处理设备的设计 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2501563A (en) * | 1946-02-20 | 1950-03-21 | Libbey Owens Ford Glass Co | Method of forming strongly adherent metallic compound films by glow discharge |
| US3024761A (en) * | 1958-07-01 | 1962-03-13 | Ibm | Vacuum evaporation apparatus |
| US3108900A (en) * | 1959-04-13 | 1963-10-29 | Cornelius A Papp | Apparatus and process for producing coatings on metals |
| US3290567A (en) * | 1960-09-23 | 1966-12-06 | Technical Ind Inc | Controlled deposition and growth of polycrystalline films in a vacuum |
| US3310424A (en) * | 1963-05-14 | 1967-03-21 | Litton Systems Inc | Method for providing an insulating film on a substrate |
| US3297465A (en) * | 1963-12-31 | 1967-01-10 | Ibm | Method for producing organic plasma and for depositing polymer films |
| US3296115A (en) * | 1964-03-02 | 1967-01-03 | Schjeldahl Co G T | Sputtering of metals wherein gas flow is confined to increase the purity of deposition |
| US3355371A (en) * | 1964-06-29 | 1967-11-28 | Gen Motors Corp | Method of anodizing a metal in a plasma including connecting said metal in a separate electrical circuit |
| US3329601A (en) * | 1964-09-15 | 1967-07-04 | Donald M Mattox | Apparatus for coating a cathodically biased substrate from plasma of ionized coatingmaterial |
| US3275412A (en) * | 1965-02-04 | 1966-09-27 | American Cyanamid Co | Production of oxides by plasma process |
-
1966
- 1966-08-12 GB GB36095/66A patent/GB1160895A/en not_active Expired
- 1966-08-22 NL NL6611792A patent/NL6611792A/xx unknown
- 1966-08-23 DE DE1621325A patent/DE1621325B2/de active Pending
-
1968
- 1968-11-27 US US779339A patent/US3472679A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US3472679A (en) | 1969-10-14 |
| NL6611792A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1967-02-27 |
| GB1160895A (en) | 1969-08-06 |
| DE1621325A1 (de) | 1971-05-13 |
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