US3290567A - Controlled deposition and growth of polycrystalline films in a vacuum - Google Patents

Controlled deposition and growth of polycrystalline films in a vacuum Download PDF

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Publication number
US3290567A
US3290567A US511285A US51128565A US3290567A US 3290567 A US3290567 A US 3290567A US 511285 A US511285 A US 511285A US 51128565 A US51128565 A US 51128565A US 3290567 A US3290567 A US 3290567A
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US
United States
Prior art keywords
gowen
growth
vacuum
controlled deposition
polycrystalline films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US511285A
Inventor
Hammond E T Gowen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Technical Industries Inc
Original Assignee
Technical Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US5814460A priority Critical
Application filed by Technical Industries Inc filed Critical Technical Industries Inc
Priority to US511285A priority patent/US3290567A/en
Priority claimed from US57829066 external-priority patent/US3371649A/en
Application granted granted Critical
Publication of US3290567A publication Critical patent/US3290567A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/32Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C10/00Adjustable resistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/10Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by flame spraying
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/12Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering

Description

Dec. 6, 1966 H. E. T. GOWEN 3,290,557
CONTROLLED DEPOSITION AND GROWTH OF POLYCRYSTALLINE FILMS IN A VACUUM Original Filed Sept. 23, 1960 21 Sheets-$heet 1 I l ""KZO j \JUU INVENTOR. HAMMOND E. T. GOWEN Attorney Dec. 6, 1966 H. E T. GOWEN 3,290,567
CONTROLLED DEPOSITION AND GROWTH OF POLYCRYSTALLINE FILMS IN A VACUUM Original Filed Sept. 25, 1960 21 Sheets-Sheet 2 V 2|9 W x w 1| 2:8
2|? 1 i .2 222 1% 6/ P /T\",-I(I/ V I J); 2'5 I am :41; f
1 220 i y 5 M w 223 2l6 K i125 2|2 2|| V O 209 2.0 207 9 208 I I I 1 5 2607 LIGHT 2609 INVENTOR. HAMMOND E. T. GOWEN Dec. 6, 1955 -r GOWEN 3,290,567
CONTROLLED DEPOSITION AND GROWTH OF POLYCRYSTALLINE FILMS IN A VACUUM Original Filed Sept. 23. 1960 21 Sheets-Sheet 3 INVENTOR. HAMMOND E. T. GOWEN Attorney 1956 H. E. T. GOWEN CONTROLLED DEPOSITION AND GROWTH OF POLYCRYSTALLINE FILMS IN A VACUUM Original Filed Sept. 23, 1960 21 Sheets-$heet =2 INVENTOR. HAMMOND E. T. GOWEN AHomey Dec. 6, 1966 H. E. T. GOWEN 3, 0,
CONTROLLED DEPOSITION AND GROWTH OF POLYCRYSTALLINE FILMS IN A VACUUM Ongmal Filed Sept. 23, 1960 21 Sheets$heet 5 v M m SCI AVA r INVENTOR. HAMMOND E. T. GOWEN BY EX Attorney Dec. 6, 1966 H. E. T. GOWEN CONTROLLED DEPOSITION AND GROWTH O FOLYCRYSTALLINE FILMS IN A VACUUM Original Filed Sept. 25, 1960 HAMMO 21 Sheets-Sheet 6 INVENTOR. ND E. T GOWEN Dec. 6, 1966 GQWEN 3,290,567
CONTROLLED DEPOSITION AND GROWTH OF FOLYCRYSTALLINE FILMS IN A VACUUM Original Filed Sept. 25, 1960 21 sheets sheet 7 INVENTOR. HAMMOND E. T. GOWEN Attorney o 4 O 7 9 6 I m w M m M AU, MW 3 NW, N W 9 0 2 m N m W 3 m u H 1 m S n W m C. f w E 1 3 v D f 2 I I 6 1 N g 0 m o E 3 M Y 9 M O A B m H w o MM H. E. T. GOWEN CONTROLLED DEPOSITION AND GROWTH OF POLYCRYSTALLINE FILMS IN A VACUUM Original Filed Sept. 23. 1960 Attorney 1966 H E. T. GOWEN 3,290,567
CONTROLLED DEPOSITION AND GROWTH OF POLYCRYSTALLINE FILMS IN A VACUUM Origmal Filed Sept. 23, 1960 21 Sheets$heet ll INVENTOR. HAMMOND E. T. GOW E N Attorney Dec. 6, 1966 E gow 3,290,567
H. CONTROLLED DEPOSITION AND GROWTH OF POLYGRYSTALLINE FILMS IN A VACUUM Original Filed Sept. 23, 1960 21 Sheets-Sheet 12 "5k up INVENTOR.
HAMMOND E. T. GOWEN orney Dec. 6, 1966 H. E. "r. GOWEN 3,290,567
CONTROLLED DEPOSITION AND GROWTH OF POLYCRYSTALLINE FILMS IN A VACUUM Original Filed Sept. 23, 1960 21 Sheets-Sheet l3 IN V EN TOR.
HAMMOND E.T. GOWEN Attorney Dec. 6, 1966 H. E. T. GOWEN 3,290,567 CONTROLLED DEPOSITION AND GROWTH OF POLYCRYSTALLINE FILMS IN A VACUUM Original Filed Sept. 23. 1960 21 Sheets-Sheet 14 3508 z J I 1 I I I7- f I I I 'i X/g 350i I I I, I I 1 g I, I I i" I I INVENTOR.
HAMMOND E. T. GOWEN Attorney Dec. 6, 1966 H. E. GOWEN 3,290,567
CONTROLLED DEP TION AND GR H 0F LYCRYSTALLINE FILMS IN A UUM Ongmal Filed Sept. 1960 21 Sheets-$heet 15 7 ill INVENTOR.
HAMMOND E. T. GOWEN Attorney Dec. 6, 1966 H. E. T. GOWEN CONTROLLED DEPOSITION AND GROWTH OF POLYCRYSTALLINE FILMS IN A VACUUM Original Filed Sept. 23, 1960 21 Sheets-Sheet 16 INVENTOR.
HAMMOND E. T. GOWEN Attorney Dec. 6, 1966 H E. T. GOWEN 3,290,567
CONTROLLED DEPOSITION AND GROWTH OF POLYCRYSTALLINE FILMS IN A VACUUM Original Filed Sept. 25, 1960 21 Sheets*Sheet 17 5695 505 U U U 5601 F ME E :1 W 5612 5608 D sen H 2 2 mu '1 n i l NIH 56|4 ['ll I) m inn, T C
ii g jsil m hw mm. m n n M W 5609 INVENTOR. HAMMOND E. T. GOWEN Attorney 5, 1966 H. E. 'r. GOWEN CONTROLLED DEPOSITION AND GROWTH OF POLYCRYSTALLINE FILMS IN A VACUUM Original Filed Sept. 25. 1960 21 Sheets-Sheet 18 INVENTOR.
HAMMOND E. T. GOWEN Attorney 1965 H. E. T. GOWEN CONTROLLED DEPOSITION AND GROWTH POLYCRYSTALLINE FILMS IN A VAC-UH Original Filed Sept. 25, 1960 INVENTOR. HAMMOND E. T. GOWEN Attorney 7M- Dec. 6, 1966 H. E. T. GOWEN 3,290,567
CONTROLLED DEPOSITION AND GROWTH OF POLYCRYSTALLINE FILMS IN A VACUUM Original Filed Sept. 25, 1960 21 Sl1eets-$heet 20 INVENTOR. HAMMOND E. T. GOWEN Atiorney

Claims (1)

  1. 6. IN AN ARTICLE OF MANUFACTURE, A SUBSTRATE, A CRYSTALLINE COATING ON SAID SUBSTRATE, SAID COATING COMPRISING A PLURALITY OF MONOCRYSTALS JOINED IN BOUNDARIES IN THE DIRECTION SUBSTANTIALLY PARALLEL TO THE SURFACE OF THE SUBSTRATE, SAID MONOCRYSTALS IN A DIRECTION AWAY FROM THE SURFACE OF SAID SUBSTRATE BEING A SINGLE CRYSTALLOGRAPHIC STRUCTURE HAVING AN INCLINATION PARALLEL TO AN AXIS OF THE
US511285A 1960-09-23 1965-11-16 Controlled deposition and growth of polycrystalline films in a vacuum Expired - Lifetime US3290567A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US5814460A true 1960-09-23 1960-09-23
US511285A US3290567A (en) 1960-09-23 1965-11-16 Controlled deposition and growth of polycrystalline films in a vacuum

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US511285A US3290567A (en) 1960-09-23 1965-11-16 Controlled deposition and growth of polycrystalline films in a vacuum
US57829066 US3371649A (en) 1960-09-23 1966-09-09 Means for controlled deposition and growth of polycrystalline films in a vacuum

Publications (1)

Publication Number Publication Date
US3290567A true US3290567A (en) 1966-12-06

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
US511285A Expired - Lifetime US3290567A (en) 1960-09-23 1965-11-16 Controlled deposition and growth of polycrystalline films in a vacuum

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Country Link
US (1) US3290567A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3467057A (en) * 1966-07-27 1969-09-16 Hitachi Ltd Electron beam evaporator
US3472679A (en) * 1965-08-25 1969-10-14 Xerox Corp Coating surfaces
US3492152A (en) * 1967-01-30 1970-01-27 Gen Dynamics Corp Method of vacuum vapor depositing a material on a substrate including reconstitution of decomposed portions of the material
US3575133A (en) * 1968-04-05 1971-04-13 Euratom Apparatus for evaporation by levitation in an ultravacuum
US3651385A (en) * 1968-09-18 1972-03-21 Sony Corp Semiconductor device including a polycrystalline diode
US3776181A (en) * 1970-02-02 1973-12-04 Ransburg Electro Coating Corp Deposition apparatus for an organometallic material
US3912826A (en) * 1972-08-21 1975-10-14 Airco Inc Method of physical vapor deposition
US3953619A (en) * 1972-10-03 1976-04-27 Agency Of Industrial Science & Technology Method for ionization electrostatic plating
US3968270A (en) * 1973-11-06 1976-07-06 Takashi Hasegawa Process for preparation of metal coatings
US4099969A (en) * 1974-10-10 1978-07-11 Xerox Corporation Coating method to improve adhesion of photoconductors
WO1981003669A1 (en) * 1980-06-13 1981-12-24 Science & Techn Ets Method for manufacturing a thin layer with orientated structure,device for implementing such method and products obtained thereby
US5089426A (en) * 1985-09-21 1992-02-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device free from electrical shortage due to pin-hole formation
US20090056328A1 (en) * 2007-08-27 2009-03-05 National Yang-Ming University Micro Generator System

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None *

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3472679A (en) * 1965-08-25 1969-10-14 Xerox Corp Coating surfaces
US3467057A (en) * 1966-07-27 1969-09-16 Hitachi Ltd Electron beam evaporator
US3492152A (en) * 1967-01-30 1970-01-27 Gen Dynamics Corp Method of vacuum vapor depositing a material on a substrate including reconstitution of decomposed portions of the material
US3575133A (en) * 1968-04-05 1971-04-13 Euratom Apparatus for evaporation by levitation in an ultravacuum
US3651385A (en) * 1968-09-18 1972-03-21 Sony Corp Semiconductor device including a polycrystalline diode
US3776181A (en) * 1970-02-02 1973-12-04 Ransburg Electro Coating Corp Deposition apparatus for an organometallic material
US3912826A (en) * 1972-08-21 1975-10-14 Airco Inc Method of physical vapor deposition
US3953619A (en) * 1972-10-03 1976-04-27 Agency Of Industrial Science & Technology Method for ionization electrostatic plating
US3968270A (en) * 1973-11-06 1976-07-06 Takashi Hasegawa Process for preparation of metal coatings
US4099969A (en) * 1974-10-10 1978-07-11 Xerox Corporation Coating method to improve adhesion of photoconductors
WO1981003669A1 (en) * 1980-06-13 1981-12-24 Science & Techn Ets Method for manufacturing a thin layer with orientated structure,device for implementing such method and products obtained thereby
US5089426A (en) * 1985-09-21 1992-02-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device free from electrical shortage due to pin-hole formation
US20090056328A1 (en) * 2007-08-27 2009-03-05 National Yang-Ming University Micro Generator System
US8046993B2 (en) * 2007-08-27 2011-11-01 National Yang-Ming University Micro generator system

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