US3290567A - Controlled deposition and growth of polycrystalline films in a vacuum - Google Patents

Controlled deposition and growth of polycrystalline films in a vacuum Download PDF

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Publication number
US3290567A
US3290567A US511285A US51128565A US3290567A US 3290567 A US3290567 A US 3290567A US 511285 A US511285 A US 511285A US 51128565 A US51128565 A US 51128565A US 3290567 A US3290567 A US 3290567A
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US
United States
Prior art keywords
gowen
growth
vacuum
controlled deposition
polycrystalline films
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US511285A
Inventor
Hammond E T Gowen
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Technical Industries Inc
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Technical Industries Inc
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Filing date
Publication date
Application filed by Technical Industries Inc filed Critical Technical Industries Inc
Priority to US511285A priority Critical patent/US3290567A/en
Priority to US578290A priority patent/US3371649A/en
Application granted granted Critical
Publication of US3290567A publication Critical patent/US3290567A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C10/00—Adjustable resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/10—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by flame spraying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering

Definitions

  • HAMMOND E. T. GOWEN Attorney 1965 H. E. T. GOWEN CONTROLLED DEPOSITION AND GROWTH POLYCRYSTALLINE FILMS IN A VAC-UH Original Filed Sept. 25, 1960 INVENTOR.
  • HAMMOND E. T. GOWEN Attorney 7M- Dec. 6, 1966 H. E. T. GOWEN 3,290,567

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)

Description

Dec. 6, 1966 H. E. T. GOWEN 3,290,557
CONTROLLED DEPOSITION AND GROWTH OF POLYCRYSTALLINE FILMS IN A VACUUM Original Filed Sept. 23, 1960 21 Sheets-$heet 1 I l ""KZO j \JUU INVENTOR. HAMMOND E. T. GOWEN Attorney Dec. 6, 1966 H. E T. GOWEN 3,290,567
CONTROLLED DEPOSITION AND GROWTH OF POLYCRYSTALLINE FILMS IN A VACUUM Original Filed Sept. 25, 1960 21 Sheets-Sheet 2 V 2|9 W x w 1| 2:8
2|? 1 i .2 222 1% 6/ P /T\",-I(I/ V I J); 2'5 I am :41; f
1 220 i y 5 M w 223 2l6 K i125 2|2 2|| V O 209 2.0 207 9 208 I I I 1 5 2607 LIGHT 2609 INVENTOR. HAMMOND E. T. GOWEN Dec. 6, 1955 -r GOWEN 3,290,567
CONTROLLED DEPOSITION AND GROWTH OF POLYCRYSTALLINE FILMS IN A VACUUM Original Filed Sept. 23. 1960 21 Sheets-Sheet 3 INVENTOR. HAMMOND E. T. GOWEN Attorney 1956 H. E. T. GOWEN CONTROLLED DEPOSITION AND GROWTH OF POLYCRYSTALLINE FILMS IN A VACUUM Original Filed Sept. 23, 1960 21 Sheets-$heet =2 INVENTOR. HAMMOND E. T. GOWEN AHomey Dec. 6, 1966 H. E. T. GOWEN 3, 0,
CONTROLLED DEPOSITION AND GROWTH OF POLYCRYSTALLINE FILMS IN A VACUUM Ongmal Filed Sept. 23, 1960 21 Sheets$heet 5 v M m SCI AVA r INVENTOR. HAMMOND E. T. GOWEN BY EX Attorney Dec. 6, 1966 H. E. T. GOWEN CONTROLLED DEPOSITION AND GROWTH O FOLYCRYSTALLINE FILMS IN A VACUUM Original Filed Sept. 25, 1960 HAMMO 21 Sheets-Sheet 6 INVENTOR. ND E. T GOWEN Dec. 6, 1966 GQWEN 3,290,567
CONTROLLED DEPOSITION AND GROWTH OF FOLYCRYSTALLINE FILMS IN A VACUUM Original Filed Sept. 25, 1960 21 sheets sheet 7 INVENTOR. HAMMOND E. T. GOWEN Attorney o 4 O 7 9 6 I m w M m M AU, MW 3 NW, N W 9 0 2 m N m W 3 m u H 1 m S n W m C. f w E 1 3 v D f 2 I I 6 1 N g 0 m o E 3 M Y 9 M O A B m H w o MM H. E. T. GOWEN CONTROLLED DEPOSITION AND GROWTH OF POLYCRYSTALLINE FILMS IN A VACUUM Original Filed Sept. 23. 1960 Attorney 1966 H E. T. GOWEN 3,290,567
CONTROLLED DEPOSITION AND GROWTH OF POLYCRYSTALLINE FILMS IN A VACUUM Origmal Filed Sept. 23, 1960 21 Sheets$heet ll INVENTOR. HAMMOND E. T. GOW E N Attorney Dec. 6, 1966 E gow 3,290,567
H. CONTROLLED DEPOSITION AND GROWTH OF POLYGRYSTALLINE FILMS IN A VACUUM Original Filed Sept. 23, 1960 21 Sheets-Sheet 12 "5k up INVENTOR.
HAMMOND E. T. GOWEN orney Dec. 6, 1966 H. E. "r. GOWEN 3,290,567
CONTROLLED DEPOSITION AND GROWTH OF POLYCRYSTALLINE FILMS IN A VACUUM Original Filed Sept. 23, 1960 21 Sheets-Sheet l3 IN V EN TOR.
HAMMOND E.T. GOWEN Attorney Dec. 6, 1966 H. E. T. GOWEN 3,290,567 CONTROLLED DEPOSITION AND GROWTH OF POLYCRYSTALLINE FILMS IN A VACUUM Original Filed Sept. 23. 1960 21 Sheets-Sheet 14 3508 z J I 1 I I I7- f I I I 'i X/g 350i I I I, I I 1 g I, I I i" I I INVENTOR.
HAMMOND E. T. GOWEN Attorney Dec. 6, 1966 H. E. GOWEN 3,290,567
CONTROLLED DEP TION AND GR H 0F LYCRYSTALLINE FILMS IN A UUM Ongmal Filed Sept. 1960 21 Sheets-$heet 15 7 ill INVENTOR.
HAMMOND E. T. GOWEN Attorney Dec. 6, 1966 H. E. T. GOWEN CONTROLLED DEPOSITION AND GROWTH OF POLYCRYSTALLINE FILMS IN A VACUUM Original Filed Sept. 23, 1960 21 Sheets-Sheet 16 INVENTOR.
HAMMOND E. T. GOWEN Attorney Dec. 6, 1966 H E. T. GOWEN 3,290,567
CONTROLLED DEPOSITION AND GROWTH OF POLYCRYSTALLINE FILMS IN A VACUUM Original Filed Sept. 25, 1960 21 Sheets*Sheet 17 5695 505 U U U 5601 F ME E :1 W 5612 5608 D sen H 2 2 mu '1 n i l NIH 56|4 ['ll I) m inn, T C
ii g jsil m hw mm. m n n M W 5609 INVENTOR. HAMMOND E. T. GOWEN Attorney 5, 1966 H. E. 'r. GOWEN CONTROLLED DEPOSITION AND GROWTH OF POLYCRYSTALLINE FILMS IN A VACUUM Original Filed Sept. 25. 1960 21 Sheets-Sheet 18 INVENTOR.
HAMMOND E. T. GOWEN Attorney 1965 H. E. T. GOWEN CONTROLLED DEPOSITION AND GROWTH POLYCRYSTALLINE FILMS IN A VAC-UH Original Filed Sept. 25, 1960 INVENTOR. HAMMOND E. T. GOWEN Attorney 7M- Dec. 6, 1966 H. E. T. GOWEN 3,290,567
CONTROLLED DEPOSITION AND GROWTH OF POLYCRYSTALLINE FILMS IN A VACUUM Original Filed Sept. 25, 1960 21 Sl1eets-$heet 20 INVENTOR. HAMMOND E. T. GOWEN Atiorney

Claims (1)

  1. 6. IN AN ARTICLE OF MANUFACTURE, A SUBSTRATE, A CRYSTALLINE COATING ON SAID SUBSTRATE, SAID COATING COMPRISING A PLURALITY OF MONOCRYSTALS JOINED IN BOUNDARIES IN THE DIRECTION SUBSTANTIALLY PARALLEL TO THE SURFACE OF THE SUBSTRATE, SAID MONOCRYSTALS IN A DIRECTION AWAY FROM THE SURFACE OF SAID SUBSTRATE BEING A SINGLE CRYSTALLOGRAPHIC STRUCTURE HAVING AN INCLINATION PARALLEL TO AN AXIS OF THE
US511285A 1960-09-23 1965-11-16 Controlled deposition and growth of polycrystalline films in a vacuum Expired - Lifetime US3290567A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US511285A US3290567A (en) 1960-09-23 1965-11-16 Controlled deposition and growth of polycrystalline films in a vacuum
US578290A US3371649A (en) 1960-09-23 1966-09-09 Means for controlled deposition and growth of polycrystalline films in a vacuum

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US5814460A 1960-09-23 1960-09-23
US511285A US3290567A (en) 1960-09-23 1965-11-16 Controlled deposition and growth of polycrystalline films in a vacuum

Publications (1)

Publication Number Publication Date
US3290567A true US3290567A (en) 1966-12-06

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Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3467057A (en) * 1966-07-27 1969-09-16 Hitachi Ltd Electron beam evaporator
US3472679A (en) * 1965-08-25 1969-10-14 Xerox Corp Coating surfaces
US3492152A (en) * 1967-01-30 1970-01-27 Gen Dynamics Corp Method of vacuum vapor depositing a material on a substrate including reconstitution of decomposed portions of the material
US3575133A (en) * 1968-04-05 1971-04-13 Euratom Apparatus for evaporation by levitation in an ultravacuum
US3651385A (en) * 1968-09-18 1972-03-21 Sony Corp Semiconductor device including a polycrystalline diode
US3776181A (en) * 1970-02-02 1973-12-04 Ransburg Electro Coating Corp Deposition apparatus for an organometallic material
US3912826A (en) * 1972-08-21 1975-10-14 Airco Inc Method of physical vapor deposition
US3953619A (en) * 1972-10-03 1976-04-27 Agency Of Industrial Science & Technology Method for ionization electrostatic plating
US3968270A (en) * 1973-11-06 1976-07-06 Takashi Hasegawa Process for preparation of metal coatings
US4099969A (en) * 1974-10-10 1978-07-11 Xerox Corporation Coating method to improve adhesion of photoconductors
WO1981003669A1 (en) * 1980-06-13 1981-12-24 Science & Techn Ets Method for manufacturing a thin layer with orientated structure,device for implementing such method and products obtained thereby
US5089426A (en) * 1985-09-21 1992-02-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device free from electrical shortage due to pin-hole formation
US20090056328A1 (en) * 2007-08-27 2009-03-05 National Yang-Ming University Micro Generator System

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None *

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3472679A (en) * 1965-08-25 1969-10-14 Xerox Corp Coating surfaces
US3467057A (en) * 1966-07-27 1969-09-16 Hitachi Ltd Electron beam evaporator
US3492152A (en) * 1967-01-30 1970-01-27 Gen Dynamics Corp Method of vacuum vapor depositing a material on a substrate including reconstitution of decomposed portions of the material
US3575133A (en) * 1968-04-05 1971-04-13 Euratom Apparatus for evaporation by levitation in an ultravacuum
US3651385A (en) * 1968-09-18 1972-03-21 Sony Corp Semiconductor device including a polycrystalline diode
US3776181A (en) * 1970-02-02 1973-12-04 Ransburg Electro Coating Corp Deposition apparatus for an organometallic material
US3912826A (en) * 1972-08-21 1975-10-14 Airco Inc Method of physical vapor deposition
US3953619A (en) * 1972-10-03 1976-04-27 Agency Of Industrial Science & Technology Method for ionization electrostatic plating
US3968270A (en) * 1973-11-06 1976-07-06 Takashi Hasegawa Process for preparation of metal coatings
US4099969A (en) * 1974-10-10 1978-07-11 Xerox Corporation Coating method to improve adhesion of photoconductors
WO1981003669A1 (en) * 1980-06-13 1981-12-24 Science & Techn Ets Method for manufacturing a thin layer with orientated structure,device for implementing such method and products obtained thereby
US5089426A (en) * 1985-09-21 1992-02-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device free from electrical shortage due to pin-hole formation
US20090056328A1 (en) * 2007-08-27 2009-03-05 National Yang-Ming University Micro Generator System
US8046993B2 (en) * 2007-08-27 2011-11-01 National Yang-Ming University Micro generator system

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