DE1619996A1 - Verfahren zum Herstellen eines einkristallinen Stabes,insbesondere aus Halbleitermaterial - Google Patents
Verfahren zum Herstellen eines einkristallinen Stabes,insbesondere aus HalbleitermaterialInfo
- Publication number
- DE1619996A1 DE1619996A1 DE19671619996 DE1619996A DE1619996A1 DE 1619996 A1 DE1619996 A1 DE 1619996A1 DE 19671619996 DE19671619996 DE 19671619996 DE 1619996 A DE1619996 A DE 1619996A DE 1619996 A1 DE1619996 A1 DE 1619996A1
- Authority
- DE
- Germany
- Prior art keywords
- rod
- pedestal
- drawn
- induction heating
- crystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000463 material Substances 0.000 title claims description 9
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 26
- 230000006698 induction Effects 0.000 claims description 26
- 239000007788 liquid Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 16
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 15
- 239000000155 melt Substances 0.000 claims description 12
- 239000002019 doping agent Substances 0.000 claims description 5
- 241000736305 Marsilea quadrifolia Species 0.000 claims description 2
- 230000008719 thickening Effects 0.000 claims description 2
- 238000010276 construction Methods 0.000 claims 1
- 230000004048 modification Effects 0.000 claims 1
- 238000012986 modification Methods 0.000 claims 1
- 238000002844 melting Methods 0.000 description 12
- 230000008018 melting Effects 0.000 description 12
- 238000001953 recrystallisation Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004857 zone melting Methods 0.000 description 2
- 235000010678 Paulownia tomentosa Nutrition 0.000 description 1
- 240000002834 Paulownia tomentosa Species 0.000 description 1
- 101150086986 Pigu gene Proteins 0.000 description 1
- 241000219793 Trifolium Species 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- SGGMZBKLQLBBLK-UHFFFAOYSA-N iron(4+) Chemical class [Fe+4] SGGMZBKLQLBBLK-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000006187 pill Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/08—Downward pulling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/91—Downward pulling
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0108918 | 1967-03-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1619996A1 true DE1619996A1 (de) | 1971-07-08 |
Family
ID=7529127
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19671619996 Pending DE1619996A1 (de) | 1967-03-18 | 1967-03-18 | Verfahren zum Herstellen eines einkristallinen Stabes,insbesondere aus Halbleitermaterial |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US3498847A (en:Method) |
| BE (1) | BE712343A (en:Method) |
| DE (1) | DE1619996A1 (en:Method) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1519908A1 (de) * | 1966-12-30 | 1970-07-02 | Siemens Ag | Vorrichtung zum Herstellen eines kristallinen Stabes durch tiegelfreies Zonenschmelzen |
| US4659421A (en) * | 1981-10-02 | 1987-04-21 | Energy Materials Corporation | System for growth of single crystal materials with extreme uniformity in their structural and electrical properties |
| US5958133A (en) * | 1996-01-29 | 1999-09-28 | General Signal Corporation | Material handling system for growing high-purity crystals |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1218404B (de) * | 1964-02-01 | 1966-06-08 | Siemens Ag | Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes |
| DE1218412B (de) * | 1964-04-29 | 1966-06-08 | Siemens Ag | Verfahren zum Herstellen von einkristallinem Halbleitermaterial |
-
1967
- 1967-03-18 DE DE19671619996 patent/DE1619996A1/de active Pending
-
1968
- 1968-03-18 BE BE712343D patent/BE712343A/xx unknown
- 1968-03-18 US US713705A patent/US3498847A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| BE712343A (en:Method) | 1968-09-18 |
| US3498847A (en) | 1970-03-03 |
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