DE1619984A1 - Verfahren zur Herstellung diffundierter UEbergaenge in Halbleitern - Google Patents
Verfahren zur Herstellung diffundierter UEbergaenge in HalbleiternInfo
- Publication number
- DE1619984A1 DE1619984A1 DE19671619984 DE1619984A DE1619984A1 DE 1619984 A1 DE1619984 A1 DE 1619984A1 DE 19671619984 DE19671619984 DE 19671619984 DE 1619984 A DE1619984 A DE 1619984A DE 1619984 A1 DE1619984 A1 DE 1619984A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor body
- transitions
- diffused
- production
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 238000000034 method Methods 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 230000007704 transition Effects 0.000 claims description 13
- 238000009792 diffusion process Methods 0.000 claims description 10
- 240000002017 Solanum caripense Species 0.000 claims 1
- 210000005069 ears Anatomy 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Thyristors (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR66305A FR1525020A (fr) | 1966-06-21 | 1966-06-21 | Procédé de fabrication de mosaïques de jonctions semi-conductrices diffusées |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1619984A1 true DE1619984A1 (de) | 1971-07-08 |
Family
ID=8611430
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19671619984 Pending DE1619984A1 (de) | 1966-06-21 | 1967-06-20 | Verfahren zur Herstellung diffundierter UEbergaenge in Halbleitern |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5024567B1 (enrdf_load_stackoverflow) |
| DE (1) | DE1619984A1 (enrdf_load_stackoverflow) |
| ES (1) | ES342042A1 (enrdf_load_stackoverflow) |
| FR (1) | FR1525020A (enrdf_load_stackoverflow) |
| GB (1) | GB1183977A (enrdf_load_stackoverflow) |
| NL (1) | NL6708531A (enrdf_load_stackoverflow) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3011089A (en) * | 1958-04-16 | 1961-11-28 | Bell Telephone Labor Inc | Solid state light sensitive storage device |
-
1966
- 1966-06-21 FR FR66305A patent/FR1525020A/fr not_active Expired
-
1967
- 1967-06-20 DE DE19671619984 patent/DE1619984A1/de active Pending
- 1967-06-20 NL NL6708531A patent/NL6708531A/xx unknown
- 1967-06-20 GB GB28326/67A patent/GB1183977A/en not_active Expired
- 1967-06-20 ES ES342042A patent/ES342042A1/es not_active Expired
- 1967-06-20 JP JP42039129A patent/JPS5024567B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| NL6708531A (enrdf_load_stackoverflow) | 1967-12-22 |
| JPS5024567B1 (enrdf_load_stackoverflow) | 1975-08-16 |
| GB1183977A (en) | 1970-03-11 |
| FR1525020A (fr) | 1968-05-17 |
| ES342042A1 (es) | 1968-07-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHW | Rejection |