DE1614264B2 - Transistor - Google Patents

Transistor

Info

Publication number
DE1614264B2
DE1614264B2 DE1967N0030940 DEN0030940A DE1614264B2 DE 1614264 B2 DE1614264 B2 DE 1614264B2 DE 1967N0030940 DE1967N0030940 DE 1967N0030940 DE N0030940 A DEN0030940 A DE N0030940A DE 1614264 B2 DE1614264 B2 DE 1614264B2
Authority
DE
Germany
Prior art keywords
base
emitter
zone
semiconductor body
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE1967N0030940
Other languages
German (de)
English (en)
Other versions
DE1614264A1 (de
Inventor
Jack Stewart Watford Hertfordshire Lamming (Grossbritannien)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE1614264A1 publication Critical patent/DE1614264A1/de
Publication of DE1614264B2 publication Critical patent/DE1614264B2/de
Granted legal-status Critical Current

Links

Classifications

    • H10W15/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H10D10/056—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs
    • H10D10/058—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs having multi-emitter structures, e.g. interdigitated, multi-cellular or distributed emitters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10W15/01—

Landscapes

  • Bipolar Transistors (AREA)
DE1967N0030940 1966-07-25 1967-07-21 Transistor Granted DE1614264B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB33426/66A GB1153497A (en) 1966-07-25 1966-07-25 Improvements in and relating to Semiconductor Devices

Publications (2)

Publication Number Publication Date
DE1614264A1 DE1614264A1 (de) 1970-05-27
DE1614264B2 true DE1614264B2 (de) 1976-07-22

Family

ID=10352810

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1967N0030940 Granted DE1614264B2 (de) 1966-07-25 1967-07-21 Transistor

Country Status (9)

Country Link
US (1) US3500143A (enExample)
AT (1) AT278902B (enExample)
BE (1) BE701770A (enExample)
CH (1) CH469361A (enExample)
DE (1) DE1614264B2 (enExample)
ES (1) ES343343A1 (enExample)
GB (1) GB1153497A (enExample)
NL (1) NL6710041A (enExample)
SE (1) SE317450B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0011120A1 (fr) * 1978-11-09 1980-05-28 International Business Machines Corporation Dispositif semi-conducteur à gain de courant amélioré et son procédé de fabrication

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3582725A (en) * 1969-08-21 1971-06-01 Nippon Electric Co Semiconductor integrated circuit device and the method of manufacturing the same
BE759583A (fr) * 1970-02-20 1971-04-30 Rca Corp Transistor de puissance pour micro-ondes
US3614553A (en) * 1970-09-17 1971-10-19 Rca Corp Power transistors having controlled emitter impurity concentrations
DE2215462C2 (de) * 1971-04-28 1983-03-31 Motorola, Inc., 60196 Schaumburg, Ill. Transistor
US3736478A (en) * 1971-09-01 1973-05-29 Rca Corp Radio frequency transistor employing high and low-conductivity base grids
US3896475A (en) * 1972-01-28 1975-07-22 Philips Corp Semiconductor device comprising resistance region having portions lateral to conductors
US3988759A (en) * 1974-08-26 1976-10-26 Rca Corporation Thermally balanced PN junction
US3962717A (en) * 1974-10-29 1976-06-08 Fairchild Camera And Instrument Corporation Oxide isolated integrated injection logic with selective guard ring
JPS5818964A (ja) * 1981-07-28 1983-02-03 Fujitsu Ltd 半導体装置
US5492844A (en) * 1993-01-29 1996-02-20 Sgs-Thomson Microelectronics, Inc. Method of manufacturing increased conductivity base contact/feeders with self-aligned structures
US6262472B1 (en) 1999-05-17 2001-07-17 National Semiconductor Corporation Bipolar transistor compatible with CMOS utilizing tilted ion implanted base
US6043130A (en) * 1999-05-17 2000-03-28 National Semiconductor Corporation Process for forming bipolar transistor compatible with CMOS utilizing tilted ion implanted base
JP6341362B2 (ja) * 2013-12-24 2018-06-13 セイコーエプソン株式会社 発熱体、振動デバイス、電子機器及び移動体

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1018673A (en) * 1963-01-28 1966-01-26 Rca Corp Semiconductor devices
US3358197A (en) * 1963-05-22 1967-12-12 Itt Semiconductor device
GB1074287A (en) * 1963-12-13 1967-07-05 Mullard Ltd Improvements in and relating to semiconductor devices
US3381183A (en) * 1965-06-21 1968-04-30 Rca Corp High power multi-emitter transistor
US3389023A (en) * 1966-01-14 1968-06-18 Ibm Methods of making a narrow emitter transistor by masking and diffusion

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0011120A1 (fr) * 1978-11-09 1980-05-28 International Business Machines Corporation Dispositif semi-conducteur à gain de courant amélioré et son procédé de fabrication

Also Published As

Publication number Publication date
CH469361A (de) 1969-02-28
ES343343A1 (es) 1968-09-01
NL6710041A (enExample) 1968-01-26
AT278902B (de) 1970-02-25
GB1153497A (en) 1969-05-29
US3500143A (en) 1970-03-10
SE317450B (enExample) 1969-11-17
DE1614264A1 (de) 1970-05-27
BE701770A (enExample) 1968-01-24

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
E77 Valid patent as to the heymanns-index 1977
EHJ Ceased/non-payment of the annual fee