DE1614264B2 - Transistor - Google Patents
TransistorInfo
- Publication number
- DE1614264B2 DE1614264B2 DE1967N0030940 DEN0030940A DE1614264B2 DE 1614264 B2 DE1614264 B2 DE 1614264B2 DE 1967N0030940 DE1967N0030940 DE 1967N0030940 DE N0030940 A DEN0030940 A DE N0030940A DE 1614264 B2 DE1614264 B2 DE 1614264B2
- Authority
- DE
- Germany
- Prior art keywords
- base
- emitter
- zone
- semiconductor body
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009792 diffusion process Methods 0.000 claims description 62
- 239000004065 semiconductor Substances 0.000 claims description 56
- 229910052710 silicon Inorganic materials 0.000 claims description 52
- 239000010703 silicon Substances 0.000 claims description 52
- 230000007704 transition Effects 0.000 claims description 24
- 230000002093 peripheral effect Effects 0.000 claims description 11
- 239000000853 adhesive Substances 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 51
- 238000000034 method Methods 0.000 description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 229910052814 silicon oxide Inorganic materials 0.000 description 17
- 229910052796 boron Inorganic materials 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 15
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000004922 lacquer Substances 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 3
- WVLBCYQITXONBZ-UHFFFAOYSA-N trimethyl phosphate Chemical compound COP(=O)(OC)OC WVLBCYQITXONBZ-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 150000001638 boron Chemical class 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000000075 oxide glass Substances 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 108010001267 Protein Subunits Proteins 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 235000011007 phosphoric acid Nutrition 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/051—Manufacture or treatment of vertical BJTs
- H10D10/056—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs
- H10D10/058—Manufacture or treatment of vertical BJTs of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs having multi-emitter structures, e.g. interdigitated, multi-cellular or distributed emitters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB33426/66A GB1153497A (en) | 1966-07-25 | 1966-07-25 | Improvements in and relating to Semiconductor Devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1614264A1 DE1614264A1 (de) | 1970-05-27 |
| DE1614264B2 true DE1614264B2 (de) | 1976-07-22 |
Family
ID=10352810
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1967N0030940 Granted DE1614264B2 (de) | 1966-07-25 | 1967-07-21 | Transistor |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3500143A (en, 2012) |
| AT (1) | AT278902B (en, 2012) |
| BE (1) | BE701770A (en, 2012) |
| CH (1) | CH469361A (en, 2012) |
| DE (1) | DE1614264B2 (en, 2012) |
| ES (1) | ES343343A1 (en, 2012) |
| GB (1) | GB1153497A (en, 2012) |
| NL (1) | NL6710041A (en, 2012) |
| SE (1) | SE317450B (en, 2012) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0011120A1 (fr) * | 1978-11-09 | 1980-05-28 | International Business Machines Corporation | Dispositif semi-conducteur à gain de courant amélioré et son procédé de fabrication |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3582725A (en) * | 1969-08-21 | 1971-06-01 | Nippon Electric Co | Semiconductor integrated circuit device and the method of manufacturing the same |
| BE759583A (fr) * | 1970-02-20 | 1971-04-30 | Rca Corp | Transistor de puissance pour micro-ondes |
| US3614553A (en) * | 1970-09-17 | 1971-10-19 | Rca Corp | Power transistors having controlled emitter impurity concentrations |
| DE2215462C2 (de) * | 1971-04-28 | 1983-03-31 | Motorola, Inc., 60196 Schaumburg, Ill. | Transistor |
| US3736478A (en) * | 1971-09-01 | 1973-05-29 | Rca Corp | Radio frequency transistor employing high and low-conductivity base grids |
| US3896475A (en) * | 1972-01-28 | 1975-07-22 | Philips Corp | Semiconductor device comprising resistance region having portions lateral to conductors |
| US3988759A (en) * | 1974-08-26 | 1976-10-26 | Rca Corporation | Thermally balanced PN junction |
| US3962717A (en) * | 1974-10-29 | 1976-06-08 | Fairchild Camera And Instrument Corporation | Oxide isolated integrated injection logic with selective guard ring |
| JPS5818964A (ja) * | 1981-07-28 | 1983-02-03 | Fujitsu Ltd | 半導体装置 |
| US5492844A (en) * | 1993-01-29 | 1996-02-20 | Sgs-Thomson Microelectronics, Inc. | Method of manufacturing increased conductivity base contact/feeders with self-aligned structures |
| US6262472B1 (en) | 1999-05-17 | 2001-07-17 | National Semiconductor Corporation | Bipolar transistor compatible with CMOS utilizing tilted ion implanted base |
| US6043130A (en) * | 1999-05-17 | 2000-03-28 | National Semiconductor Corporation | Process for forming bipolar transistor compatible with CMOS utilizing tilted ion implanted base |
| JP6341362B2 (ja) * | 2013-12-24 | 2018-06-13 | セイコーエプソン株式会社 | 発熱体、振動デバイス、電子機器及び移動体 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1018673A (en) * | 1963-01-28 | 1966-01-26 | Rca Corp | Semiconductor devices |
| US3358197A (en) * | 1963-05-22 | 1967-12-12 | Itt | Semiconductor device |
| GB1074287A (en) * | 1963-12-13 | 1967-07-05 | Mullard Ltd | Improvements in and relating to semiconductor devices |
| US3381183A (en) * | 1965-06-21 | 1968-04-30 | Rca Corp | High power multi-emitter transistor |
| US3389023A (en) * | 1966-01-14 | 1968-06-18 | Ibm | Methods of making a narrow emitter transistor by masking and diffusion |
-
1966
- 1966-07-25 GB GB33426/66A patent/GB1153497A/en not_active Expired
-
1967
- 1967-07-20 NL NL6710041A patent/NL6710041A/xx unknown
- 1967-07-21 AT AT679067A patent/AT278902B/de not_active IP Right Cessation
- 1967-07-21 SE SE10762/67*A patent/SE317450B/xx unknown
- 1967-07-21 DE DE1967N0030940 patent/DE1614264B2/de active Granted
- 1967-07-21 US US655218A patent/US3500143A/en not_active Expired - Lifetime
- 1967-07-22 ES ES343343A patent/ES343343A1/es not_active Expired
- 1967-07-24 BE BE701770D patent/BE701770A/xx unknown
- 1967-07-24 CH CH1044467A patent/CH469361A/de unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0011120A1 (fr) * | 1978-11-09 | 1980-05-28 | International Business Machines Corporation | Dispositif semi-conducteur à gain de courant amélioré et son procédé de fabrication |
Also Published As
| Publication number | Publication date |
|---|---|
| SE317450B (en, 2012) | 1969-11-17 |
| BE701770A (en, 2012) | 1968-01-24 |
| ES343343A1 (es) | 1968-09-01 |
| AT278902B (de) | 1970-02-25 |
| GB1153497A (en) | 1969-05-29 |
| US3500143A (en) | 1970-03-10 |
| CH469361A (de) | 1969-02-28 |
| DE1614264A1 (de) | 1970-05-27 |
| NL6710041A (en, 2012) | 1968-01-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| E77 | Valid patent as to the heymanns-index 1977 | ||
| EHJ | Ceased/non-payment of the annual fee |