DE1564461C3 - Hochspannungstransistor und Verfahren zu seiner Herstellung - Google Patents
Hochspannungstransistor und Verfahren zu seiner HerstellungInfo
- Publication number
- DE1564461C3 DE1564461C3 DE1564461A DE1564461A DE1564461C3 DE 1564461 C3 DE1564461 C3 DE 1564461C3 DE 1564461 A DE1564461 A DE 1564461A DE 1564461 A DE1564461 A DE 1564461A DE 1564461 C3 DE1564461 C3 DE 1564461C3
- Authority
- DE
- Germany
- Prior art keywords
- zone
- base
- collector
- voltage transistor
- semiconductor body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H10P32/00—
-
- H10P95/00—
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL656513666A NL149326B (nl) | 1965-10-22 | 1965-10-22 | Hoogspanningstransistor. |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE1564461A1 DE1564461A1 (de) | 1970-01-08 |
| DE1564461B2 DE1564461B2 (de) | 1975-04-03 |
| DE1564461C3 true DE1564461C3 (de) | 1975-11-20 |
Family
ID=19794428
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1564461A Expired DE1564461C3 (de) | 1965-10-22 | 1966-10-18 | Hochspannungstransistor und Verfahren zu seiner Herstellung |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US3449646A (enExample) |
| AT (1) | AT281920B (enExample) |
| BE (1) | BE688616A (enExample) |
| CH (1) | CH464359A (enExample) |
| DE (1) | DE1564461C3 (enExample) |
| ES (1) | ES332522A1 (enExample) |
| FR (1) | FR1503966A (enExample) |
| GB (1) | GB1133529A (enExample) |
| NL (1) | NL149326B (enExample) |
| SE (1) | SE342361B (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4840659B1 (enExample) * | 1969-01-21 | 1973-12-01 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1464305B2 (de) * | 1962-02-10 | 1970-09-10 | Nippon Electric Co. Ltd., Tokio | Verfahren zum Herstellen von Halbleiterbauelementen sowie nach diesem Verfahren hergestellte Bauelemente |
| US3270255A (en) * | 1962-10-17 | 1966-08-30 | Hitachi Ltd | Silicon rectifying junction structures for electric power and process of production thereof |
| NL296392A (enExample) * | 1963-08-07 |
-
1965
- 1965-10-22 NL NL656513666A patent/NL149326B/xx not_active IP Right Cessation
-
1966
- 1966-10-18 US US587456A patent/US3449646A/en not_active Expired - Lifetime
- 1966-10-18 DE DE1564461A patent/DE1564461C3/de not_active Expired
- 1966-10-19 GB GB46756/66A patent/GB1133529A/en not_active Expired
- 1966-10-19 AT AT973766A patent/AT281920B/de not_active IP Right Cessation
- 1966-10-19 CH CH1511666A patent/CH464359A/de unknown
- 1966-10-20 BE BE688616D patent/BE688616A/xx not_active IP Right Cessation
- 1966-10-20 SE SE14307/66A patent/SE342361B/xx unknown
- 1966-10-20 FR FR80741A patent/FR1503966A/fr not_active Expired
- 1966-10-20 ES ES0332522A patent/ES332522A1/es not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR1503966A (fr) | 1967-12-01 |
| DE1564461A1 (de) | 1970-01-08 |
| NL149326B (nl) | 1976-04-15 |
| GB1133529A (en) | 1968-11-13 |
| CH464359A (de) | 1968-10-31 |
| SE342361B (enExample) | 1972-01-31 |
| US3449646A (en) | 1969-06-10 |
| ES332522A1 (es) | 1967-11-16 |
| NL6513666A (enExample) | 1967-04-24 |
| BE688616A (enExample) | 1967-04-20 |
| AT281920B (de) | 1970-06-10 |
| DE1564461B2 (de) | 1975-04-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| E77 | Valid patent as to the heymanns-index 1977 | ||
| 8339 | Ceased/non-payment of the annual fee |