AT281920B - Hochspannungstransistor - Google Patents

Hochspannungstransistor

Info

Publication number
AT281920B
AT281920B AT973766A AT973766A AT281920B AT 281920 B AT281920 B AT 281920B AT 973766 A AT973766 A AT 973766A AT 973766 A AT973766 A AT 973766A AT 281920 B AT281920 B AT 281920B
Authority
AT
Austria
Prior art keywords
high voltage
voltage transistor
transistor
voltage
Prior art date
Application number
AT973766A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of AT281920B publication Critical patent/AT281920B/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
AT973766A 1965-10-22 1966-10-19 Hochspannungstransistor AT281920B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL656513666A NL149326B (nl) 1965-10-22 1965-10-22 Hoogspanningstransistor.

Publications (1)

Publication Number Publication Date
AT281920B true AT281920B (de) 1970-06-10

Family

ID=19794428

Family Applications (1)

Application Number Title Priority Date Filing Date
AT973766A AT281920B (de) 1965-10-22 1966-10-19 Hochspannungstransistor

Country Status (10)

Country Link
US (1) US3449646A (de)
AT (1) AT281920B (de)
BE (1) BE688616A (de)
CH (1) CH464359A (de)
DE (1) DE1564461C3 (de)
ES (1) ES332522A1 (de)
FR (1) FR1503966A (de)
GB (1) GB1133529A (de)
NL (1) NL149326B (de)
SE (1) SE342361B (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4840659B1 (de) * 1969-01-21 1973-12-01

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1464305B2 (de) * 1962-02-10 1970-09-10 Nippon Electric Co. Ltd., Tokio Verfahren zum Herstellen von Halbleiterbauelementen sowie nach diesem Verfahren hergestellte Bauelemente
US3270255A (en) * 1962-10-17 1966-08-30 Hitachi Ltd Silicon rectifying junction structures for electric power and process of production thereof
NL296392A (de) * 1963-08-07

Also Published As

Publication number Publication date
GB1133529A (en) 1968-11-13
DE1564461B2 (de) 1975-04-03
DE1564461A1 (de) 1970-01-08
NL149326B (nl) 1976-04-15
ES332522A1 (es) 1967-11-16
DE1564461C3 (de) 1975-11-20
CH464359A (de) 1968-10-31
US3449646A (en) 1969-06-10
FR1503966A (fr) 1967-12-01
SE342361B (de) 1972-01-31
BE688616A (de) 1967-04-20
NL6513666A (de) 1967-04-24

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee