DE1564401C3 - Anordnung mit einer Kaltkathode zum Erzeugen eines freien Elektronenstromes - Google Patents
Anordnung mit einer Kaltkathode zum Erzeugen eines freien ElektronenstromesInfo
- Publication number
- DE1564401C3 DE1564401C3 DE19661564401 DE1564401A DE1564401C3 DE 1564401 C3 DE1564401 C3 DE 1564401C3 DE 19661564401 DE19661564401 DE 19661564401 DE 1564401 A DE1564401 A DE 1564401A DE 1564401 C3 DE1564401 C3 DE 1564401C3
- Authority
- DE
- Germany
- Prior art keywords
- type part
- arrangement according
- type
- electrons
- semiconductor body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 104
- 239000000370 acceptor Substances 0.000 claims description 58
- 239000000463 material Substances 0.000 claims description 52
- 239000011248 coating agent Substances 0.000 claims description 50
- 238000000576 coating method Methods 0.000 claims description 50
- 239000011701 zinc Substances 0.000 claims description 28
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 24
- 229910052725 zinc Inorganic materials 0.000 claims description 24
- 229910005540 GaP Inorganic materials 0.000 claims description 18
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 18
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 16
- 229910052792 caesium Inorganic materials 0.000 claims description 15
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 15
- 150000001875 compounds Chemical class 0.000 claims description 8
- 229910052783 alkali metal Inorganic materials 0.000 claims description 6
- 150000001340 alkali metals Chemical class 0.000 claims description 6
- 229910052788 barium Inorganic materials 0.000 claims description 6
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 5
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005507 spraying Methods 0.000 description 6
- 239000003708 ampul Substances 0.000 description 5
- UQMRAFJOBWOFNS-UHFFFAOYSA-N butyl 2-(2,4-dichlorophenoxy)acetate Chemical compound CCCCOC(=O)COC1=CC=C(Cl)C=C1Cl UQMRAFJOBWOFNS-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 230000008719 thickening Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 229910052753 mercury Inorganic materials 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
Landscapes
- Cold Cathode And The Manufacture (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6505085A NL150609B (nl) | 1965-04-22 | 1965-04-22 | Inrichting voor het opwekken van een elektronenstroom. |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE1564401A1 DE1564401A1 (de) | 1969-10-02 |
| DE1564401B2 DE1564401B2 (de) | 1974-02-14 |
| DE1564401C3 true DE1564401C3 (de) | 1974-10-10 |
Family
ID=19792993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19661564401 Expired DE1564401C3 (de) | 1965-04-22 | 1966-04-22 | Anordnung mit einer Kaltkathode zum Erzeugen eines freien Elektronenstromes |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS499255B1 (enExample) |
| BE (1) | BE679967A (enExample) |
| BR (1) | BR6678830D0 (enExample) |
| CA (1) | CA923960A (enExample) |
| DE (1) | DE1564401C3 (enExample) |
| ES (1) | ES325709A1 (enExample) |
| GB (1) | GB1147883A (enExample) |
| NL (1) | NL150609B (enExample) |
| SE (1) | SE312382B (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL8104893A (nl) * | 1981-10-29 | 1983-05-16 | Philips Nv | Kathodestraalbuis en halfgeleiderinrichting voor toepassing in een dergelijke kathodestraalbuis. |
| US6351254B2 (en) | 1998-07-06 | 2002-02-26 | The Regents Of The University Of California | Junction-based field emission structure for field emission display |
| WO2006061686A2 (en) * | 2004-12-10 | 2006-06-15 | Johan Frans Prins | A cathodic device |
-
1965
- 1965-04-22 NL NL6505085A patent/NL150609B/xx not_active IP Right Cessation
-
1966
- 1966-04-19 BR BR17883066A patent/BR6678830D0/pt unknown
- 1966-04-19 SE SE532466A patent/SE312382B/xx unknown
- 1966-04-20 GB GB1732066A patent/GB1147883A/en not_active Expired
- 1966-04-20 JP JP2487866A patent/JPS499255B1/ja active Pending
- 1966-04-20 ES ES0325709A patent/ES325709A1/es not_active Expired
- 1966-04-21 CA CA958477A patent/CA923960A/en not_active Expired
- 1966-04-22 BE BE679967D patent/BE679967A/xx not_active IP Right Cessation
- 1966-04-22 DE DE19661564401 patent/DE1564401C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL6505085A (enExample) | 1966-10-24 |
| NL150609B (nl) | 1976-08-16 |
| JPS499255B1 (enExample) | 1974-03-02 |
| BE679967A (enExample) | 1966-10-24 |
| ES325709A1 (es) | 1967-02-16 |
| GB1147883A (en) | 1969-04-10 |
| BR6678830D0 (pt) | 1973-12-26 |
| DE1564401A1 (de) | 1969-10-02 |
| SE312382B (enExample) | 1969-07-14 |
| CA923960A (en) | 1973-04-03 |
| DE1564401B2 (de) | 1974-02-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| SH | Request for examination between 03.10.1968 and 22.04.1971 | ||
| C3 | Grant after two publication steps (3rd publication) | ||
| E77 | Valid patent as to the heymanns-index 1977 | ||
| 8339 | Ceased/non-payment of the annual fee |